Q We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare the two directly?
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
Q:For Si-doped GaN, what are the resistivity and mobility? A:Mobility:150-200Resistivity<0.05ohm.cm,
Q: What wafer size do you provide with flat sapphire substrate? A:Currently we still can offer 2″ wafer on flat sapphire substrate.
Q:We want to know the refractive index of these SiC wafers? A:The refractive index is no=2.707, ne=2.755
Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs? A:Yes, we can offer 850nm or 620nm for 4” size.
Q: Regarding LED epi wafer,does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A: Sorry, we can not offer fabrication of [...]
