Q We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare the two directly?
Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.
Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier lifetime <1ps, Sealed under nitrogen in single wafer cassette. A: Dislocation Density<1×10^6cm-2
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide? A: Sure.
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
Q: After MOCVD, do you anneal the wafer for p-GaN activation? A:Yes! We will anneal the wafer for p-GaN activation
Q: What wafer size do you provide with flat sapphire substrate? A:Currently we still can offer 2″ wafer on flat sapphire substrate.
