LED Wafer on Silicon

LED Wafer on Silicon

LED wafer on silicon

 

 

 

 

 

 

PAM-XIAMEN can offer high performance blue and green light-emitting diode prototypes that grow 2”, 4”, 6” and 8” gallium (GaN) layers based on LED structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, and large diameter silicon wafer processing is already popular in the semiconductor market, with the possibility of mass LED manufacturing. For more details, please refer to the tables below:

1. Specifications of LED Epiwafer on Silicon:

1.1 LED Epiwafer on Silicon for Blue Light(mainly used in MicroLED display products)

ItemParameters
Size2’’, 4”, 6” and 8”
OrientationC-axis(0001)+/-1°
P-(AlIn)GaN120 – 170 nm, [Mg] > 1E19/cm3
InGaN/GaN Multiple Quantum Wells100 – 200 nm
nGaN 1.40 – 1.60 um, [Si] ~ 5.0E18/cm3
Buffer1.50 – 1.70 um
Average Dominant Wavelength450 ~ 470 nm
Wafer bow< ±50 um
FWHM< 20 nm
SubstrateSi(111)
Substrate Thickness100 mm800 um
150 mm1 mm
200 mm1.15 mm

1.2 LED Epiwafer on Silicon for Green Light

ItemParameters
Size2’’, 4”, 6” and 8”
OrientationC-axis(0001)+/-1°
P-(AlIn)GaN100 – 170 nm, [Mg] > 1E19/cm3
InGaN/GaN Multiple Quantum Wells200 – 300 nm
nGaN 1.40 – 1.60 um, [Si] ~ 5.0E18/cm3
Buffer1.50 – 1.70 um
Average Dominant Wavelength500 ~ 520 nm
Wafer bow< ±50 um
FWHM< 40 nm
SubstrateSi(111)
Substrate Thickness100 mm800 um
150 mm1 mm
200 mm1.15 mm

2. Why Choose Silicon-based for MicroLED Applications?

The reasons for choosing silicon-base for microLED applications are illustrated below:

Firstly, silicon can have a diameter of up to 300 mm, and the cost is low.

Secondly, since the particles are embedded on the surface during the growth process and damage the quality of the material, the fewer the particles, the better the quality of the epitaxial wafer. Silicon can provide a good substrate for high-quality and low-particle-level epitaxial wafers.

More importantly, GaN-on-silicon has the advantage of being compatible with mature silicon-based manufacturing. This manufacturing technology is very mature and can be used for monolithic integration of thin film processes and arrays.

Finally, appropriate strain engineering techniques can be used in GaN-on-silicon epitaxial wafers to achieve good uniformity and minimal warpage.

A large number of tests of PAM-XIAMEN epitaxial wafers show that they have a strong potential for the preparation of microLEDs. PAM-XIAMEN LED wafer has a wafer warpage below 30μm, an internal quantum efficiency of over 80% and good wavelength uniformity, which can well support the productivity ramp-up of microLED display manufacturing.

For more information, please contact us email at [email protected] and [email protected].

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