PAM XIAMEN offers Middium and Small Size Photomask.
Chromium Plate Accuracy (Standard Size:6inch Quartz)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
3μm/3μm
5μm/5μm
10μm/10μm
CD Control
±0.1μm
±0.3μm
±0.5μm
±1.0μm
Total Pitch Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Registration Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Overlay Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Orthogonality
±0.5μrad
±0.75μrad
±1.0μrad
±2.0μrad
Chrome Plate Material (Photomask Blank Plate)
Material
Soda Lime Glass、Quartz
Max. Size
3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″
Normal Size
1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm
Thickness
6.35±0.2mm (QZ)
Film Type
Low Reflectance Chrome
Optical Density(λ=450nm)
Between Plates3.0±0.3 In Plate±0.3
Reflectivity(λ=436nm)
Between Plates10±5% In Plate±2%
Main application areas:
1. IC Bumping, [...]
2019-07-04meta-author
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on [...]
2013-05-02meta-author
PAM XIAMEN offers YSZ ( Yittrium stablized ZrO2).
3.5 mol.% YSZ Ceramic Substrate 10x10x0.5 mm , fine ground on both sides
3.5% YSZ Ceramic Substrate 10x10x0.5 mm, two sides polished
3.5mol.% YSZ Ceramic Substrate 10x10x0.5 mm , one side polished
8% YSZ Ceramic Substrate [...]
2019-04-18meta-author
PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates.
Main Parameters
Growth Method
orthogonal
Unit cell constant
a=5.43、b=5.50、c=7.71
Melt point(℃)
1600℃
Density
7.57g/cm3
Dielectric constants
25
Growth method
hanging maneuver method
Size
10×3, 10×5, 10×10, [...]
2019-03-14meta-author
PAM-XIAMEN can offer 4 inch test grade silicon wafer with single side polished. The parameters for 4″-SSP Si wafer at test grade are as follows:
1. Parameters of Si Single Crystal Wafer at Test Grade
PAM-210310-Si wafer
Sl No
Item
Specifications
1
Growing Method
CZ
2
Wafer Diameter
100±0.5 mm
3
Wafer Thickness
525±25 μm
4
Wafer Surface Orientation
<100>±0.5º
5
Type
P type
6
Dopant
Boron
7
Dislocation Density
Less than 5000/cm2
8
Resistivity
2-8 [...]
2021-04-14meta-author
PAM-01C is a low noise and high gain charge sensitive preamplifier. It can be used as a key part for semiconductor detector, such as CZT and Si, and other detecting signal readout.
1. Charge Sensitive Pre-amplifier Chip Specifications Comparison
Brands
(PAM-01C)
Gremat(PAM-110)
Dimensions
24×15×3mm3
22.7×21×3.4mm3
Weight
5g
2.5g
Power
<0.3W
0.66W
Powered by
±12V
±12V
Operation temperature
-20℃-+40℃
-20℃-+40℃
Equivalent noise level
ENC:180e-
ENC:260e-
Falling edge time
250-400us
150-200us
Gain
G=5mv/fc
G=3.4mv/fc
Input [...]
2019-04-25meta-author