Li – Lithium Metal Foil

PAM XIAMEN offers Lithium Metal Foil.

Lithium Chip 16 mm Dia x 0.6 mm Thickness for Li-ion Battery R&D

Purity 99.9% Lithium
Melting Point 180.5 °C
Density 0.534 g/cm3
Color Silver
Dimension “16 mm x 0.6 mm
(diameter x thickness)”

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-05-08

Test grade silicon wafers-9

PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 – 0.035 Ohmcm 150 ± 0.5 mm 400 ± 15 µm 40 5 40 6 SSP Red Phos. N+ 100 47,5 ± 2,5 01T ± 0,50 0.0 ± 0.5° 0.015 [...]

2019-02-25meta-author

Ti: Sapphire Crystal

PAM XIAMEN offers Ti: Sapphire Crystal Ti: Sapphire Crystal Ti Sapphire Crystal Introduction Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm. This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers, mode-locked oscillators, chirped pulse amplifiers, thin-plate [...]

2019-07-24meta-author

(20-2-1) Plane N-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-2-1) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(20-2-1)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email [...]

2020-09-02meta-author

Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

Highlights •Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si – multi-junction solar cells. •Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS. •The projected widths of the interface layers [...]

2015-05-19meta-author GaA, gaas wafer suppliers，gaas substrate supplier，gaas wafers

6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

PAM XIAMEN offers 6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm 6inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 152.4mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns Distortion: less than 35 microns Thickness of the isolation oxide: at least 20 nm Front side: polished Back side: lapped-etched For more information, send us email at [email protected] and [email protected]

2021-03-17meta-author

Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation

Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocation Highlights •High-quality InSb was grown on GaAs by MBE using a “buffer-free” method. •The strain energy is relieved by interfacial misfit dislocations observed by TEM. •The type and separation of dislocations are [...]

2015-08-13meta-author gaas wafer, InSb on GaAs

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Li – Lithium Metal Foil

Li – Lithium Metal Foil

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