PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates.

                                            Main Parameters
Crystal structure M4
Unit cell constant a=5.17 A    c=6.26 A
Melt point(℃) 1900
Density 2.62(g/cm3
Hardness 7.5(mohs)
Size 10×3,10×5,10×10,15×15,20×15,20×20,
Ф15,Ф20,Ф1″,Ф2″, Ф2.6″
Thickness 0.5mm, 1.0mm
Polishing Single or double side polished
Crystal Orientation <100>  <001>
Crystal orientation accuracy ±0.5°
Redirection the edge: 2°(special in 1°)
Angle of crystal Special size and orientation are available upon request
Ra: ≤5Å (5µm×5µm), epi-ready

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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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