Light-emitting InGaN/GaN Heterojunction Bipolar Transistors

Light-emitting InGaN/GaN Heterojunction Bipolar Transistors

 

The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor depositionon sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μm2 emitter device demonstrates a current gain β = ΔICIB = 49 at 3 mA and breakdown voltage, BVCEO>70 V. The radiative recombination spectrum of a large area 100×100 μm2 emitter HBT is measured, showing a peak at 387 nm and a full width at half maximum of 47 nm. A 1 kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.

SOURCE:AIP

If you need more information about light-emitting InGaN/GaN heterojunction bipolar transistors,please visit our  website:www.powerwaywafer.com,send us email atsales@powerwaywafer.com or powerwaymaterial@gmail.com.

Share this post