Light-emitting InGaN/GaN Heterojunction Bipolar Transistors

Light-emitting InGaN/GaN Heterojunction Bipolar Transistors

The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor depositionon sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μm² emitter device demonstrates a current gain β = ΔI_C/ΔI_B = 49 at 3 mA and breakdown voltage, BV_CEO>70 V. The radiative recombination spectrum of a large area 100×100 μm² emitter HBT is measured, showing a peak at 387 nm and a full width at half maximum of 47 nm. A 1 kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.

SOURCE:AIP

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2012-12-06

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Light-emitting InGaN/GaN Heterojunction Bipolar Transistors

Light-emitting InGaN/GaN Heterojunction Bipolar Transistors

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