Light-emitting InGaN/GaN Heterojunction Bipolar Transistors
The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor depositionon sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μm2 emitter device demonstrates a current gain β = ΔIC/ΔIB = 49 at 3 mA and breakdown voltage, BVCEO>70 V. The radiative recombination spectrum of a large area 100×100 μm2 emitter HBT is measured, showing a peak at 387 nm and a full width at half maximum of 47 nm. A 1 kHz modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.
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