LITAO3 LITHIUM TANTALATE CRYSTAL

PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.

Major capability parameter
Material purity	>99.995%
Crystal structure	M6
Unit cell constant	a=5.154Å c=13.783 Å
Melt point（℃）	1650
Density	7.45（g/cm³）
Hardness	5.5~6（mohs）
Color	Colorless
Index of refraction	no=2.176 ne=2.180 （633nm）
Through scope	0.4～5.0mm
Resistance coefficient	1015wm
Dielectric constants	es11/eo:39~43 es33/eo:42~43
	et11/eo:51~54 et33/eo:43~46
Thermal expansion	aa=1.61×10-6/k，ac=4.1×10-6/k
Product
Name	Product	Direction	Size
LTB	Crystal great	X、Y、Z±1º	Ø2″×50mm
			Ø3″×50mm
LTW	Double flip Ra<10Å	X, y, z or y, rotating or not take place side	10×10×0.5mm
			Ø2″×0.5mm
			Ø3″×0.5mm
			Ø3″×1.0mm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-03-13

Related Posts

Ceramic Substrate-10

PAM XIAMEN offers Glass Substrates(BK7 Glass and Corning Glass). BK7 Glass BK 7 (Schott) glass substrates 76.2mm x 25.4 mm x 0.5 mm, Double sides optical polished BK7 (Schott) glass substrates 10 x10 x 0.5 mm, Double sides polished ( 60/40) BK7 (Schott) glass [...]

2019-04-18meta-author

Comprehensive Analysis of Process Variability on AlGaN/GaN HEMTs through TCAD Simulations

We designed and fabricated AlGaN/GaN high-electron-mobility transistors (HEMTs) employing both a floating gate (FG) and a field plate (FP), which increase the breakdown voltage of AlGaN/GaN HEMTs significantly without sacrificing forward electric characteristics. The electric field strength at the gate–drain region of the proposed [...]

2013-09-03meta-author

Carrier Concentration and Thickness Measurements of n-Type GaAs Epitaxial Layer by Cell Voltage in Anodization

The carrier concentration and thickness of n-type GaAs epitaxial layers were obtained by cell voltage measurements in anodization, and the results are compared with those obtained by differential C-V measurements. The carrier concentrations in the epi-layer are within the order of those obtained by [...]

2019-06-13meta-author

PBN-PG composite heater

PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns. PG ribbon thickness 0.05mm Main Heating Zones Front surface: Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher Auxiliary Heating Zones Back surface: Outer element [...]

2019-03-13meta-author

Stainless Steel Substrate ( Polycrystaline)

PAM XIAMEN offers Stainless Steel Substrate ( Polycrystaline) . Stainless Steel Substrate: 1″ Dia x 0.3 mm, as cold rolling Substrate dimension: 25.4 diameter x 0.3 mm thickness, ( 1″ Dia. x0.3 mm) Properties Yield Strength:（N/mm2）≥205 Tensile strength :≥520 Elogation: （%）≥40 Density : 7.93 g·cm-3 Resistivity: 0.73 Ω·mm2·m-1 [...]

2019-04-19meta-author

GaN whitepaper

Advantech Wireless releases GaN whitepaper The company’s paper discusses gallium nitride based solid state power amplifiers for satellite communication Advantech Wireless, a Canadian-based manufacturer of broadcast-quality Satellite, RF Equipment and Microwave Systems has released a new whitepaper titled, “A new generation of Gallium Nitride (GaN) based [...]

2012-08-30meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.