Lithium Niobate

Lithium niobate (LiNbO3) is a compound of niobium, lithium, and oxygen. Its single crystals are an important material for optical waveguides, mobile phones, piezoelectric sensors, optical modulators and various other linear and non-linear optical applications.Single crystals of lithium niobate can be grown using the Czochralski process. A Z-cut, single crystal Lithium Niobate wafer. After a crystal is grown, it is sliced into wafers of different orientation. Common orientations are Z-cut, X-cut, Y-cut, and cuts with rotated angles of the previous axis.

Powerway Wafer Co.,Limited  completes ion implantation and splitting+ grinding process platform and offers 3-6 inch wafer implantation, bonding, peeling.

Regular Products Structure Remark
LNOI
(Top layer thickness 50-1000nm)
Single-Crystal LN Thin Film
SiO2(2μm)
LN Substrate(500μm)
Large refractive index difference
Application: Electro-optic modulators, Optical wave-guides, Resonators, SAW devices, FRAM memory devices
LN on Si with SiO2
(Top layer thickness 50-1000nm)
Single-Crystal LN Thin Film
SiO2
Si Substrate(400 or 500μm)
Large refractive index difference
Integration with silicon
Application: Electro-optic modulators, Optical wave-guides, Resonators, SAW devices, FRAM memory devices
LT on Si
(Top layer thickness 5-50μm)
Single-Crystal LT Thin Film
Si Substrate
Direct bonding
Intergration with silicon
Application: SAW devices
LN on Si
(Top layer thickness 5-50μm)
Single-Crystal LN Thin Film
Si Substrate
Direct bonding
Intergration with silicon
Application: SAW devices
LT on SiO2/Si
(Top layer thickness 50-1000nm)
Single-Crystal LT Thin Film
SiO2
Si Substrate
Increased pyroelectric properties
Enhanced sensitivity of pyroelectric devices
Application: Pyroelectric sensors, SAW devices
MgO-doped LN
(Top layer thickness 50-1000nm)
MgO-doped LN Thin Film
SiO2
LN Substrate
Resistant to optical demage
Ability to endure high light intensity
Inclination to thin film polarization
Application: Electro-optic modulators, Terahertz generation
LN with Electrode
(Top layer thickness 50-1000nm)
LN Thin Film
SiO2
Elctrode(100nm)
LN Substrate
Application:
Electro-optic modulators
Optical wave-guides
Resonators
LN Thin Film
Elctrode
SiO2
LN Substrate
Application:
SAW devices
FARM memory devices

 

Specification of LNOI Series Products
Top LN Functional Layer
   Diameter     3″(76.2mm)/4″(100mm)
   Thickness     50~1000nm
   Reflection index     no≈±2.2860
    ne≈±2.2024
   Edge Exclusion     5mm
    Orientation     Z, X, Y, Y-128°etc.
    Voids     <10
    TTV     ±5%
Isolation Layer
   Preparation Method     PECVD, Thermal Oxide
   Thickness     1000~4000nm
    Reflection Index     1.46~1.48
    TTV     ±5%
Optional Substrate
   Si, LN, Quartz, Glass
Optional Electrode Layer (above or under SiO2 isolation layer)
   Material     Pt/Au
    Thickness range     100~400nm
SAW lithium niobate
optical lithium niobate
MgO doped lithium niobate
Reduction lithium niobate
Stoichiometric lithium niobate (SLN)
Lithium niobate thin film/SiO2/Lithium niobate
Lithium niobate thin film/electrode/SiO2/Lithium niobate
Lithium niobate thin film/electrode/SiO2/Lithium niobate
SAW  lithium tantalate
optical  lithium tantalate
SAW  quartz wafer
LN on Quartz 
Free standing LT thin film 
lithium tantalate on Si
lithium niobate on Si

Please see below detail specs:

Piezoelectric LiNbO3 Wafer

1. General LN Crystal Wafer Requirements:piezocrystal
Orientation:To be as requested ±0.20 ,unless specified.
Diameter:(1)Φ76.2±0.5mm    (2) Φ100.0±0.5mm
Thickness:(1)0.50±0.05mm    (2) 0.35±0.03mm
Bow:≤ 40um
Taper:≤ 20um

Identification flat position and length is to be as follows
Primary Flat Location:Must be within ±0.20 , unless specified.
Primary Flat Length:    (1)22±2mm   (2)32±2mm   unless specified.
Secondary Flat Length:(1)10±3mm  (2)12±3mm   unless specified.

Surface Polish Quality:
Surface Polish :Mirror polished 10—15A
Backside Polish:Lapped with GC240 or GC1000 diamond sand and etched.
Edge Chips:Edge rounding
Curie Temp. :1142±30C

2. Individual wafer Orientation "Special"Requirement :
1)Orientation :127.860Y±0.20
Primary flat direction:X-axis.
Secondary Flat:none
640Y-cut

2)Orientation:640Y±0.20
Primary flat direction:X-axis
econdary Flat:1800 clockwise from the primary flat if required.

3)YZ-cut
Orientation:Y-axis±0.20
Primary flat direction:Z-axis
Secondary Flat:X-axis

3.Optical LiNbO3 wafer
Crystal Orientation: X, Z
Orientation Fluctuation: ±0.30, two ends of crystal shall be polished.
Diameter: 76.2±0.5 mm
Length: 50~80 mm.
Curie Temp.1142±20C
Orientation of First Reference Flat: As required ±0.20.
Length of First Reference Flat: 22±2 mm inspection polished.
Second Reference Flat: Available if required, the length shall be 10±3mm
Appearance: Free of crack, pore, inclusion.

4.Optical characteristics:
Transparent range:370—5000nm
Refractive index:(633nm)no=2.286     ne=2.200
Refractive gradient(633nm)≤5×10-5/cm
Transmittivity(633nm)≥68%
Briefringence index: △n= no – ne≈0.08
Piezoelectronic Quartz Wafer

5.General Quartz Wafer Requirements:
Diameter:(1)Φ76.2±0.5mm
Thickness:(1)0.35±0.05mm  (2) 0.40±0.05mm  (3)0.50±0.05mm
Bow:≤ 40um
Taper:≤ 20um
Orientation:To be as requested ±0.20 ,unless specified.
Identification flat position and length is to be as follows:
Primary Flat Location:Must be within ±0.20 , unless specified.
Primary Flat Length:22±2mm     unless specified.
Secondary Flat Length:10±3mm   unless specified.
Surface Polish Quality:
Surface Polish :Mirror Polished 10—15A
Backside Polish:Lapped with GC600 or GC1200 diamond sand and etched.
Edge Chips:Edge rounding
Seed Location:To be within the center 6.5mm of the wafer or not required.
Q Factor:≥ 2 million min.

6.Individual wafer Orientation "Special"Requirement:
1)360Y-cu
Orientation:360Y±0.20
Primary flat direction:X-axis.
Secondary Flat:Two flat,90 and 270 from theprimary flat if required.
340Y-cut

2)Orientation:340Y±0.20
Primary flat direction:X-axis
Secondary Flat:900 clockwise from the primary flat if required.
42.750Ycut

3)Orientation:42.750Y±0.20
Primary flat direction:X-axis

7.lithium tantalate
1)General LT Crystal Wafer Requirements:
Diameter: (1)Φ76.2±0.5mm       (2) Φ100.0±0.5mm
Thickness: (1)0.50±0.03mm        (2) 0.40±0.03mm
Bow:≤ 40um
Taper:≤ 20um
Orientation:To be as requested ±0.20 ,unless specified.

Identification flat position and length is to be as follows:
Primary Flat Location:Must be within ±0.20 , unless specified.
Primary Flat Length:  (1)22±2mm           (2)32±2mm   unless specified.
Secondary Flat Length:   (1)10±3mm           (2)12±3mm   unless specified.

8.Surface Polish Quality:
Surface Polish :Mirror Polished 10—15A
Backside Polish:Lapped with GC1200 diamond sand and etched.
Edge Chips:Edge rounding
Curie Temp. :605±30C

Individual wafer Orientation "Special"Requirement :
1)360Y-cut
Orientation:360Y±0.20
Primary flat direction:X-axis.
Secondary Flat:none

2)420Y-cut
Orientation:420Y±0.20

Primary flat direction:X-axis.
Secondary Flat:1800 clockwise from the primary flat if required.
X-1120Ycut
Orientation:X-axis±0.20
Primary flat direction:+1120Y

9.Piezoelectronic Quartz Wafer
General Quartz Wafer Requirements:
Diameter:(1)Φ76.2±0.5mm
Thickness:(1)0.35±0.05mm  (2) 0.40±0.05mm  (3)0.50±0.05mm
Bow:≤ 40um
Taper:≤ 20um
Orientation:To be as requested ±0.20 ,unless specified.
Identification flat position and length is to be as follows:
Primary Flat Location:Must be within ±0.20 , unless specified.
Primary Flat Length:22±2mm     unless specified.
Secondary Flat Length:10±3mm   unless specified.

10.Surface Polish Quality:
Surface Polish :Mirror Polished 10—15A
Backside Polish:Lapped with GC600 or GC1200 diamond sand and etched.
Edge Chips:Edge rounding
Seed Location:To be within the center 6.5mm of the wafer or not required.
Q Factor:≥ 2 million min.

Individual wafer Orientation "Special"Requirement:
1)360Y-cu
Orientation:360Y±0.20
Primary flat direction:X-axis.
Secondary Flat:Two flat,90 and 270 from theprimary flat if required.

2)340Y-cut
Orientation:340Y±0.20
Primary flat direction:X-axis
Secondary Flat:900 clockwise from the primary flat if required.

3)42.750Ycut
Orientation:42.750Y±0.20
Primary flat direction:X-axis

4)Others available if required

Related Products
lithium niobate modulator
lithium niobate refractive index
lithium niobate phase modulator
lithium niobate wafer
lithium niobate properties

keywords:
ion implantation
lithium tantalate wafer
lithium niobate layer
LN on Quartz
LN Thin Film
SAW quartz wafer
lithium tantalate layer
lithium tantalate substrate
lithium tantalate thin film
LT on SiO2/Si
LN with Electrode
LN Substrate
Black lithium niobate
lithium niobate on Si
LT on Si

4″ LiNbO3 thin film on Silicon Wafer

3″LiNbO3 single crystal thin film

If you need more information about lithium niobate,
please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com.

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