2019/2
Stoichiometric LPCVD Nitride on Silicon Wafers
Low Stress Nitride Silicon Wafers
Super Low Stress Nitron on Silicon Wafers
PECVD Nitride
Targeted Stress LPCVD Nitride
Silicon Nitride Waveguide – Substrates and Services Provided
Custom Silicon Wafers
Silicon Epi Wafers Sale
P-type silicon substrates
N-Type Silicon Substrates
Undoped Silicon Wafers
Float Zone Silicon Wafers
Ultra-Thinned Silicon Wafers
Solar [...]
2019-02-15meta-author
Silicon Wafer with thermal oxidation or Wet and Dry Thermal Oxide (SiO2) are in Stock,oxidation film(SiO2)can be custom
In Stock, But Not Limited To The Following.
Wafer No.c
Wafer Size
Polished /oxidation sides
Type/Orientation
Wafer Thickness(um)
oxidation thickness
Resistivity(Ohm.cm)
Quantity(pcs)
PAM-XIAMEN-WAFER-#O01
1″
SSP, both oxidation
P100
525±10
300nm
<0.005
290
PAM-XIAMEN-WAFER-#O02
2″
SSP, both oxidation
P100
500±20
3um
1-10
24
PAM-XIAMEN-WAFER-#O03
2″
DSP, both oxidation
N100
285±15
1um
1-10
50
PAM-XIAMEN-WAFER-#O04
2″
SSP, both oxidation
P100
430±10
300nm
<0.005
5
PAM-XIAMEN-WAFER-#O05
3″
SSP, both oxidation
100
400±10
2um
>10000
20
PAM-XIAMEN-WAFER-#O06
4″
SSP, both oxidation
100
400±10
2um
>10000
25
PAM-XIAMEN-WAFER-#O07
4″
SSP, both [...]
2019-11-27meta-author
PAM-XIAMEN offers Indium Semiconductor Wafer:InAs,InP, InSb
InAs wafer Substrate- Indium Arsenide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
InAs
(110)
40.0
500
SSP
N/A
P
(1-9)E17
N/A
N/A
1-100
InAs
(100)
50.8
450
SSP
N/A
P
1E17/cc
N/A
< 20000
1-100
InAs
(100)
50.8
400
SSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(100)
50.8
400
DSP
N/A
N/S
5E18-2E19
>6,000
<1E4
1-100
InAs
(111)B
50.8
N/A
SSP
N/A
N/S
(1-3)E18
N/A
N/A
1-100
InAs
(100)
50.8
N/A
SSP
N/A
N/Te
1E16/cc
N/A
N/A
1-100
InAs
(100)
50.8
400
DSP
N/A
P
(1-9)E18/cc
N/A
N/A
1-100
InAs
(100)
3x3x5
N/A
N/A
N/A
N/A
3E16/cc
N/A
N/A
As a InAs wafer supplier,we offer InAs wafer list for your reference, if you need price detail, please contact our sales team
3)2”InAs
Type/Dopant:N Un-doped
Orientation : <111>A ±0.5°
Thickness:500um±25um
epi-ready
Ra<=0.5nm
Carrier Concentration(cm-3):1E16~3E16
Mobility(cm -2 ):>20000
EPD(cm -2 ):<15000
SSP
5)2”InAs
Type/Dopant:N/P
Orientation :(100),
Carrier Concentration(cm-3):(5-10)E17,
Thickness:500 [...]
Silicon Carbide List
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-350-A
4″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-100-N-SIC-350-B
4″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-100-N-SIC-350-D
4″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-100-N-SIC-370-L
4″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-100-N-SIC-440-AC
4″ 4H-N
0°/4°±0.5°
440±25um
D
*
As-cut
>75%
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
3″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-76-N-SIC-350-A
3″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-N-SIC-350-B
3″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-N-SIC-350-D
3″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-76-N-SIC-370-L
3″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-76-N-SIC-410-AC
3″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-76-N-SIC-C0510-AC-D
3″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-D
3″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C0510-AC-C
3″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-C
3″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S4H-76-SI-SIC-350-A
3″ 4H-SI
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-SI-SIC-350-B
3″ 4H-SI
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-SI-SIC-350-D
3″ 4H-SI
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
2″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-51-N-SIC-330-A
2″ 4H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S4H-51-N-SIC-330-B
2″ 4H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S4H-51-N-SIC-330-D
2″ 4H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S4H-51-N-SIC-370-L
2″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-51-N-SIC-410-AC
2″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-51-N-SIC-C0510-AC-D
2″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-D
2″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C0510-AC-C
2″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-C
2″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
2″ 6H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S6H-51-N-SIC-330-A
2″ 6H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-N-SIC-330-B
2″ 6H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-N-SIC-330-D
2″ 6H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-N-SIC-370-L
2″ 6H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-N-SIC-410-AC
2″ 6H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-N-SIC-C0510-AC-D
2″ 6H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-D
2″ 6H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C0510-AC-C
2″ 6H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-C
2″ 6H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S6H-51-SI-SIC-330-A
2″ 6H-SI
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-SI-SIC-330-B
2″ 6H-SI
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-SI-SIC-330-D
2″ 6H-SI
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-SI-SIC-370-L
2″ 6H-SI
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-SI-SIC-410-AC
2″ 6H-SI
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-SI-SIC-C0510-AC-D
2″ 6H-SI
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-SI-SIC-C1015-AC-D
2″ 6H-SI
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
Please see below sub-catalogue:
6H n type SiC
4H N Type SiC
4H Semi-insulating SiC
SiC Ingots
Lapped Wafers
Polishing Wafer
As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team.
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
Silicon Nitride Wafer Si3N4 Thin Film By LPCVD
In Stock, But Not Limited To The Following.
Wafer No.
Wafer Size
Polished-Side
Type/Orientation
Si3N4 Thickness
Wafer Thickness(um)
Resistivity(Ohm.Cm)
Quantity(Pcs)
PAM-XIAMEN-WAFER-#N1
2″
DSP, both Si3N4
N100
200nm
400±15
3-6
25
PAM-XIAMEN-WAFER-#N2
2″
SSP,both Si3N4
P100
200nm
400±15
<0.0015
24
PAM-XIAMEN-WAFER-#N3
2″
Si3N4 with Cu
48.8*3mm
—
—
—
1
PAM-XIAMEN-WAFER-#N4
3″
DSP, both Si3N4
—
150nm
—
—
2
PAM-XIAMEN-WAFER-#N5
4″
SSP,both Si3N4
N100
40nm
500±10
<0.02
2
PAM-XIAMEN-WAFER-#N6
4″
DSP, both Si3N4
N100
50nm
510-540
2-4
9
PAM-XIAMEN-WAFER-#N7
4″
DSP, both Si3N4
P type
50nm
200±10
<0.02
5
PAM-XIAMEN-WAFER-#N8
4″
SSP,both Si3N4
N100
95nm
525±15
1-10
22
PAM-XIAMEN-WAFER-#N9
4″
SSP,both Si3N4
N100
100nm
500±10
<0.05
7
PAM-XIAMEN-WAFER-#N10
4″
DSP, both Si3N4
P100
200±20nm
300±10
5-10
50
PAM-XIAMEN-WAFER-#N11
4″
DSP, both Si3N4
N100
100nm
200±15
1-15
19
PAM-XIAMEN-WAFER-#N12
4″
DSP, both Si3N4
P100
150nm
500±25
10-20
1
PAM-XIAMEN-WAFER-#N13
4″
SSP,both Si3N4
P100
200nm
525±25
10-20
25
PAM-XIAMEN-WAFER-#N14
4″
SSP,both Si3N4
P type
200nm
500±10
<0.05
15
PAM-XIAMEN-WAFER-#N15
4″
DSP, both [...]
2019-11-27meta-author
Compound Semiconductor Wafer Including Gaas Wafer,Germanium Wafer, InP Wafer,InSb Wafer
In Stock, But Not Limited To The Following.
Wafer No.
Wafer Size
Polished
Type
Wafer Thickness
Quantity(pcs)
Dislocation Density
Resistivity(ohm.cm)
PAM-XIAMEN-WAFER-#III-V1
1″
SSP
N100
450±25
9
EPD<700
0.00204-0.00427
PAM-XIAMEN-WAFER-#III-V2
10*11 cell
average efficiency 32.72%
—
—
56
—
—
PAM-XIAMEN-WAFER-#III-V3
2″
SSP
Semi-insulating
350um
10
EPD<700
—
PAM-XIAMEN-WAFER-#III-V4
2″
DSP
Semi-insulating
350±20
2
EPD<900
—
PAM-XIAMEN-WAFER-#III-V5
2″
DSP
Semi-insulating
350±20
2
EPD<600
—
PAM-XIAMEN-WAFER-#III-V6
2″
SSP
N type 15°
350um
1
EPD<5000
—
PAM-XIAMEN-WAFER-#III-V7
2″
SSP
N type 15°
350um
35
EPD500-1000
—
PAM-XIAMEN-WAFER-#III-V8
2″
DSP
N type 2°
350um
5
<50
—
PAM-XIAMEN-WAFER-#III-V9
2″
SSP
N type 2°
350um
2
EPD1735-2198
—
PAM-XIAMEN-WAFER-#III-V10
2″
SSP
N type 2°
350um
25
EPD1569-2061
—
PAM-XIAMEN-WAFER-#III-V11
2″
SSP
N type 2°
450um
3
—
PAM-XIAMEN-WAFER-#III-V12
2″
DSP
N type
400±15
14
EPD<50
—
PAM-XIAMEN-WAFER-#III-V13
2″
DSP
N type
625±15
4
epd1300-1400
—
PAM-XIAMEN-WAFER-#III-V14
2″
DSP
N type
625±15
34
EPD50-100
—
PAM-XIAMEN-WAFER-#III-V15
2″
DSP
N type 100
110um
15
JGS2001002,G202001X
—
PAM-XIAMEN-WAFER-#III-V16
2″
SSP
PNP/N Epi wafer
—
4
—
—
PAM-XIAMEN-WAFER-#III-V17
2″GaP
SSP
—
250±20
1
—
—
PAM-XIAMEN-WAFER-#III-V18
3″
SSP
Semi-insulating
600um/625um
1
—
—
PAM-XIAMEN-WAFER-#III-V19
3″
DSP
Semi-insulating
586um
1
—
—
PAM-XIAMEN-WAFER-#III-V20
3″
DSP
Semi-insulating
600um/501um
1
—
—
PAM-XIAMEN-WAFER-#III-V21
3″
SSP/DSP
Semi-insulating
625um
25
—
—
PAM-XIAMEN-WAFER-#III-V22
3″
DSP
625±20
20
—
—
PAM-XIAMEN-WAFER-#III-V23
3″
DSP
Semi-insulating
3500±20
2
—
—
PAM-XIAMEN-WAFER-#III-V24
3″
DSP
Semi-insulating
625um
35
—
—
PAM-XIAMEN-WAFER-#III-V25
3″
SSP/DSP
N type [...]
2019-11-27meta-author