Graphene Wafers/films
We provide graphene wafer films:Monolayer Graphene on PET film,Monolayer Graphene on SiO2/Silicon,Bilayer Graphene on SiO2/Silicon,Monolayer Graphene on Copper,
Graphene growth on nickel for researches and industry.
Graphene Wafers/films
Item No
Description
MG/PET-10-10
Monolayer Graphene on PET film (10 mm x 10 mm)
MG/PET-20-20
Monolayer Graphene on PET film(20 mm x 20 mm)
MG/PET-50-50
Monolayer Graphene on PET film (50 mm x 50 mm)
MG/PET-100-100
Monolayer Graphene on PET film (100 mm x 100 mm)
MG/PET-300-200
Monolayer Graphene on PET film(300 mm x 200 mm)
MG/PET-500-200
Monolayer Graphene on PET film (500 mm x 200 mm)
MG/SiO2/Si-10-10
Monolayer Graphene on SiO2/Silicon (10mm x 10mm)
MG/SiO2/Si-25-25
Monolayer Graphene on SiO2/Silicon(1 inch x 1 inch)
MG/SiO2/Si-100
Monolayer Graphene on SiO2/Silicon (100mm Wafer)
BG/SiO2/Si-10-10
Bilayer Graphene on SiO2/Silicon(10 mm x 10 mm)
TG/SiO2/Si-10-10
Trilayer Graphene on SiO2/Silicon (10 mm x 10 mm)
MG/Cu-10-10
Monolayer Graphene on Copper (10 mm x 10 mm)
MG/Cu-20-20
Monolayer Graphene on Copper (20 mm x 20mm)
MG/Cu-25-25
Monolayer Graphene on Copper (1 inch x 1 inch)
MG/Cu-50-50
Monolayer Graphene on Cu (50 mm x 50 mm)
MG/Cu-100-50
Monolayer Graphene on Cu (100 mm x 50 mm)
MG/Cu-100
Monolayer Graphene on Cu (100mm wafers)
MG/Ni-10-10
Graphene growth on nickel(10mm x 10mm)
MG/Ni-20-20
Graphene growth on nickel(20mm x 20mm)
MG/Ni-30-20
Graphene growth on nickel(30mm x 20mm)
MG/Ni-50-20
Graphene growth on nickel(50mm x 20mm)
Source:PAM-XIAMEN
For more information, please visit our website:www.powerwaywafer.com, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com
Ge Wafer Supplier
Ge Wafer Substrate-Germanium
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
1-100
Ge
(100)
50.8
500±25
SSP
0.0138-0.02
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500
SSP
≥30
N/undoped
N/A
N/A
<5A
1-100
Ge
(100)
50.8
500
SSP
58.4-63.4
N/undoped
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-1
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
1000
DSP
>30
N/A
(110)
N/A
N/A
1-100
Ge
(100)
50.8
2000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
4000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(111)/(110)
50.8
200000
N/A
5-20
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
400
SSP
<0.4
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
50.8
4000±10
DSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
350
SSP
1-10
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
2-10
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
N/Sb
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
P/Ga
(110)
≤5000
N/A
1-100
Ge
(111)
60
1000
As cut
>30
N/A
(110)
<3000
N/A
1-100
Ge
(100)
100
N/A
SSP
<0.019
P/Ga
(110)
<500
N/A
1-100
Ge
(100)
100
1000±25
SSP
≥30
N/undoped
N/A
N/A
N/A
1-100
Ge
(100) off 6°or off 9°
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)
100
500
DSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)6°off (111)
100
185±15
DSP
0.01-0.05
N/A
(110)
≤5000
<5A
1-100
Ge
(100)6°off (110)
100
525±25
SSP
0.01-0.04
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
1000±15
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
750±25
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
500±25
SSP
10-30
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(111)
100
500±25
SSP
<0.4
N/Sb
N/A
N/A
N/A
1-100
Ge
(100)6°off-cut toward(111)A
100
175±25
SSP
0.003-0.009
P/Ga
(0-1-1) (0-11)
<100
N/A
1-100
Ge
(310)±0.1°
100
200±15
DSP
>20
N/A
N/A
N/A
N/A
1-100
Ge
(111)
150
600-700
N/A
>30
N/A
(110)
N/A
N/A
As a Ge wafer supplier,we offer germanium wafer list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity [...]
SAPPHIRE WAFERS
2 INCH ALUMINUM NITRIDE ALN TEMPLATE ON SAPPHIRE
BARIUM FLUORIDE BAF2 CRYSTAL
BATIO3 BTO BARIUM TITANATE CRYSTAL SUBSTRATES
BGO BISMUTH GERMANATE BI4GE3O12 SCINTILLATION CRYSTAL CRYSTALS
GRAPHENE CVD FILMS AND GRAPHENE OXIDE
EU DOPED CALCIUM FLUORIDE EU: CAF2 CRYSTAL
NON-LINEAR CRYSTAL CA4YO(BO3)3 YCOB
CERIUM FLUORIDE CEF3 CRYSTAL
CSI CESIUM IODIDE SCINTILLATION CRYSTAL [...]
2019-03-12meta-author
Other Wafers
ZnO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
ZnO
(0001)
10×10
1000
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
1000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(10-10)
10×10
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10×10
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
10X15
300
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
N/A
14X14
1000
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
15X15
300
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
1000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
As cut
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
3000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
25.4×25.4
2000
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5×5
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5X5
500
DSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(0001)
5X5
500
SSP
N/A
undoped
none
N/A
<0.5
1-100
ZnO
(11-20)
5X5
500
SSP
N/A
undoped
none
N/A
<0.5
As a ZnO semiconductor wafer supplier, we offer ZnO semiconductor wafer list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
MgO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
MgO
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(111)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(111)
10×10
1000
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
1000
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
MgO
(100)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
As a MgO semiconductor wafer supplier,we offer MgO semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
YSZ Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
YSZ
(100)
25.4
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
200
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
400
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
300
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
25.4
200
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(111)
10×10
500
DSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
10×10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
20×20
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
YSZ
(100)
30×30
500
SSP
N/A
N/A
N/A
N/A
<0.5
As a YSZ wafer supplier,we offer YSZ wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
STO Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
STO
(100)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
STO
(110)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
STO
(111)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
As a STO wafer supplier,we offer STO wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
LSAT Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
PCS
(mm)
(μm)
Ω·cm
Orientation
/cm2
nm
1-100
LSAT
(100)
50.8
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(100)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(110)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(111)
10X10
500
SSP
N/A
N/A
N/A
N/A
<0.5
1-100
LSAT
(100)
10X10
2000
SSP
N/A
N/A
N/A
N/A
<0.5
As a LSAT wafer supplier,we offer LSAT wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
TiO2 Wafer
Quantity
Material
Orientation.
Size
Thickness
Polish
Resistivity
Type Dopant
Prime [...]
Nitride Semiconductor Wafer
Free-standing Gallium Nitride
Item No.
Type
Orientation
Thickness
Grade
Micro Defect Density
Surface
Usable area
N-Type
PAM-FS-GaN50-N
2″ N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN45-N
dia.45mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN40-N
dia.40mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN38-N
dia.38mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN25-N
dia.25.4mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN15-N
14mm*15mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN10-N
10mm*10.5mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN5-N
5mm*5.5mm, N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
SEMI-INSULATING
PAM-FS-GaN50-SI
2″ N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN45-SI
dia.45mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P or P/L
>90%
PAM-FS-GaN40-SI
dia.40mm,N type
0°±0.5°
300±25um
A/B
0/<2/cm2
P/P [...]
PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP
GaSb Wafer Substrate – Gallium Antimonide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
GaSb
(100)±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)A±0.5
50.8
500±25
SSP
N/A
Te
1E17 – 5E18
N/A
< 1000
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Te
(5-8)E17
N/A
N/A
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
P/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/Te
(1-8)E17/(2-7)E16
N/A
< 1000
1-100
GaSb
(100)
50.8
450±25
SSP
N/A
N/A
(1-1.2)E17
N/A
N/A
1-100
GaSb
(100)
50.8
350±25
SSP
N/A
N/A
N/A
N/A
N/A
1-100
GaSb
(100)
76.8
500-600
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)
100
800±25
DSP
N/A
P/Zn
N/A
N/A
N/A
1-100
GaSb
(100)
100
250±25
N/A
N/A
P/ZnO
N/A
N/A
N/A
As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team
1)2″,3″GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
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