Indium antimonide (InSb) detector is sensitive for the mid-wave infrared (MWIR) band. In terms of mid-infrared detection in the 3-5um band, due to the advantages of mature material technology, high sensitivity and good stability, InSb detectors stand out from detectors based on other materials. [...]
2022-04-06meta-author
PAM XIAMEN offers 8″ Silicon Wafer
8″ Silicon Wafer
P-Type
Diameter 200.00±0.5 mm
Thickness 725±50μm
Dislocation density < 10-2 cm-2
Dopant – Boron
Resistivity- 10-40 Ω.cm
Chamfer width 700-1000 μm
Orientation – (100)±0.5
single sided polishing
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-09-03meta-author
The Development Trend of LED Wafer Chip Industry in 2018
Abstract
Since 2016, the LED industry has been in a period of rapid development, and by 2018, a new pattern has emerged. Throughout the entire LED industry chain, we can see that the LED wafer chip [...]
2018-07-31meta-author
PAM XIAMEN offers 6″ Prime EPI Wafer.
6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P [...]
2019-07-03meta-author
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
Undoped
Undoped
Diameter:
100.0±0.2
100.0±0.2
mm
Orientation:
(100)±0.30offtoward (110)
(100)±0.30offtoward [...]
2020-05-26meta-author
GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry
SLOW RAMP-UP BUT HUGE EXPECTATIONS
The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies are selling [...]