Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

Epitaxial growth was performed on 8° off-axis 4H-SiC(0001) by horizontal hot-wall chemical vapor deposition (CVD) in a SiH4-C3H8-H2 system at 1550°C. High growth rates of 10–13 µm/h were attained by growth with a high SiH4 flow rate of 4.0 sccm. A mirror like surface was obtained by employing an optimum C/Si ratio and by an improved process of initial growth. The epilayers grown with an optimum C/Si ratio showed high purity in the low 1013 cm-3 range (n-type) and low trap concentrations in the low 1011 cm-3 range. Minority carrier lifetime was investigated by a differential microwave-detected photoconductance decay (µ-PCD) measurement. A long carrier lifetime of approximately 2 µs was obtained for a 50-µm-thick epilayer

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2019-03-27

GaN LEDs fabricated using SF6 plasma RIE

We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:GaN LEDs fabricated using SF6 plasma RIE Published by: Wasif Khan ; Xiaopeng Bi ; Bin Fan ; Wen Li Department of Electrical and [...]

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2019-02-19meta-author

Getting to 450 mm Wafer Soone

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Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

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