LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers
In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure [...]
PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers
Recently, PAM XIAMEN, a leading supplier of GaN epitaxial wafers, announced that it has successfully developed “6-inch silicon-on-silicon (GaN-on-Si) epitaxial wafers” and its 6 inch size is on mass production.
PAM XIAMEN is effective [...]
2019-02-11meta-author
PAM XIAMEN offers GaAs(111) crystal.
GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 sp
GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ [...]
2019-04-22meta-author
Effects of sample processing on the performance of CdZnTe crystals
Due to the outstanding properties of CdZnTe materials, CdZnTe detectors have been the research focus for X- and gamma ray applications for many years. For CdZnTe detector fabrication heat treatments are often desirable. In order to provide detailed information of the CdZnTe crystal [...]
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5度),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ [...]
2019-06-24meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (111)
BaTiO3 (111) 5×5 x1.0 mm, 2SP , Substrate grade(with domains)
BaTiO3 (111) 5×5 x0.5 mm, 1SP , Substrate grade(with domains)
BaTiO3 (111) 5×5 x1.0 mm, 1SP , Substrate grade(with domains)
BaTiO3 (111) 10x10x0.5 mm, 1SP , [...]
2019-04-17meta-author
