Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

Epitaxial growth was performed on 8° off-axis 4H-SiC(0001) by horizontal hot-wall chemical vapor deposition (CVD) in a SiH4-C3H8-H2 system at 1550°C. High growth rates of 10–13 µm/h were attained by growth with a high SiH4 flow rate of 4.0 sccm. A mirror like surface was obtained by employing an optimum C/Si ratio and by an improved process of initial growth. The epilayers grown with an optimum C/Si ratio showed high purity in the low 1013 cm-3 range (n-type) and low trap concentrations in the low 1011 cm-3 range. Minority carrier lifetime was investigated by a differential microwave-detected photoconductance decay (µ-PCD) measurement. A long carrier lifetime of approximately 2 µs was obtained for a 50-µm-thick epilayer

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

2019-03-27

Something about Wafer Etching You Should Know

Etching is a technique used for micromachining to chemically remove layers from the surface of a wafer during manufacturing. Etching techniques can be divided into wet etching and dry etching. PAM-XIAMEN can provide silicon etching wafer for your applications. 1. Wet Chemical Etching The mechanism of [...]

2022-05-30meta-author

In Q4 Discount prices for Universities and Research Institutes

In Q4 Discount prices for Universities and Research Institutes We are pleased to inform that PAM-XIAMEN announces the introduction of special Q4 discount prices for universities and research institutes for small size GaN C-plane with n-type and semi-insulating wafers, which are currently on the company’s [...]

2012-10-18meta-author

80+1mm FZ Si Ingot-1

PAM XIAMEN offers 80+1mm FZ Si Ingot-1 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]

2020-03-13meta-author

8″ Silicon Wafer-2

PAM XIAMEN offers 8″ Silicon Wafer 8″ Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Chamfer width 700-1000 μm Orientation – (100)±0.5 single sided polishing For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]

2019-09-03meta-author

Transform Infrared Spectroscopy (FTIR) Undoped Silicon

PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate Below is one of our silicon items that is great for FTIR Spectroscopy. Si 100mm Undoped <100> >10,000 ohm-cm 525um DSP Prime Silicon shows promise to be the next-evolution anode material for lithium-ion batteries (LIBs). But Silicon electrodes exhibit significant [...]

2019-02-26meta-author

Rapid heating thermal shock behavior study of CVD ZnS infrared window material: Numerical and experimental study

Highlights • The temperature-dependent strengths of CVD ZnS were obtained. • The thermal shock behavior of infrared window was studied by finite element method. • Rapid heating thermal shock tests were conducted to validate the numerical results. Abstract The thermal shock failure has been recognized as one of key failure modes of [...]

2018-01-24meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

Share this post

Related Posts

Something about Wafer Etching You Should Know

In Q4 Discount prices for Universities and Research Institutes

80+1mm FZ Si Ingot-1

8″ Silicon Wafer-2

Transform Infrared Spectroscopy (FTIR) Undoped Silicon

Rapid heating thermal shock behavior study of CVD ZnS infrared window material: Numerical and experimental study

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers