In this paper, a sandwich structure comprising a SiO2 capping layer, amorphous Germanium (a-Ge) nanodots (NDs), and a pit-patterned Silicon (Si) substrate is developed, which is then annealed by utilizing a pulsed ultraviolet excimer laser in order to fabricate an array of pure, single crystal [...]
2019-12-30meta-author
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm.
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: [...]
2019-07-03meta-author
PAM XIAMEN offers Indium Foil.
Indium ( In ) Foil: 100 mm (W) x 100 mm ( L） x 0.1 mm ( T)
Polycrystal In Foil
Purity: > 99.995%
Size: 0.10 mm thickness x 100mm width x 100 mm Length
Surface finish: as cold rolling [...]
2019-05-08meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
The role of carbon and SiO2 in solid-state sintering of SiC
Published by:
Eran Gross;Dana Benes Dahan;Wayne D. Kaplan.
Department of [...]
2019-11-05meta-author
Super Low Stress Nitron on Silicon Wafers
PAM XIAMEN offers Super Low Stress Nitron on Silicon Wafers
When you need the thickest nitride Super Low Stress Nitride is the nitride to use.
We can deposit up to 4 micron of nitride using this method of nitride deposition.
SPECIFICATIONS
Thickness range: 50Å [...]
2019-02-11meta-author
The effect of anisotropy on the deformation and fracture of sapphire wafers subjected to thermal shocks
This paper studies the effect of anisotropy on the response of an R -plane sapphire wafer to a rapid thermal loading. The finite element method was used to analyse the [...]
