Indium arsenide (InAs) single crystal is available with S doped, Zn doped, Sn doped and undoped conductivity types in various orientations and sizes. InAs is a compound semiconductor material that is difficult to purify. Indium arsenide single crystal growth can be processed by LEC [...]
2019-03-12meta-author
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces availability of InGaN substrate materials. InGaN is the key compound semiconductor material used for the fabrication of blue, green, and white light emitting diodes (LEDs),GaN-based [...]
2012-12-04meta-author
PAM XIAMEN offers 6″FZ Silicon Wafer-1 Silicon wafers, per SEMI Prime, P/E 6″Ø×675±25µm FZ p-type Si:B[110]±0.5° Ro > 1,000 Ohmcm, One-sidepolished, backside Alkaline etched 2 Flats Sealed in Empak or equivalent cassette For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-11meta-author
PAM-XIAMEN offers M Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN M-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] ±0.5° 3″ 325 P/E FZ 100-200 SEMI Prime p-type Si:B [100] 3″ 380 P/E FZ 7,000-10,000 SEMI Prime p-type Si:B [100] 3″ 350 P/P FZ 1-5 SEMI Prime p-type Si:B [100] 3″ 160 ±10 P/P FZ 0.5-10.0 SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee p-type Si:B [100] 3″ 890 ±13 P/P FZ 0.5-10.0 SEMIt, TTV<8μm p-type Si:B [111] ±0.5° 3″ 380 P/E FZ 8,000-10,000 SEMI TEST (has scratches), in hard cst p-type Si:B [111] ±0.5° 3″ 475 P/E FZ >4,400 SEMI Prime, TTV<5μm p-type Si:B [111] ±0.25° 3″ 400 P/E FZ >100 SEMI Prime n-type Si:P [100] 3″ 380 P/P FZ 7,000-18,000 SEMI Prime n-type [...]
2019-03-06meta-author
PAM XIAMEN offers 905nm laser diode wafers. 1. Specs of 905nm Laser Diode Wafer 1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS Layer Composition Thickness Concentration 13 P+ GaAs / / 12 P-AlGaAs cladding + waveguide d~1.6um / 11 Undoped GaInAs QW PL:880~900nm / / 10 N- AlGaAs cladding + waveguide / 9 N++ GaAs/P++ GaAs Tunnel junction / / 8 P- AlGaAs cladding + waveguide / 7 Undoped GaInAs QW PL:880~900nm / / 6 N- AlGaAs cladding [...]
2019-03-13meta-author