Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling
On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]
2018-04-19meta-author
PAM XIAMEN offers GaAs (100) undoped crystal .
GaAs, 10×5,10×10
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×3 x0.5 mm, 2SP
GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10×5 x0.5 mm, 2SP
GaAs (100) orientation, SI (semi-insulating), undoped 5x5x 0.5mm, 1sp,
GaAs [...]
2019-04-22meta-author
PAM XIAMEN offers 4″CZ Prime Silicon wafer-16
4″ CZ Silicon Wafer SSP
Silicon wafers, per SEMI Prime,
P/E 4″Ø×525±25μm, SEMI Flats (two),
p-type Si:B[100]±0.5°, Ro=(0.001-0.002)Ohmcm,
One-side-polished, back-side Alkaline etched,
TTV<5μm, Bow/Warp<30μm,
Wafers free of striation marks,
Sealed in Empak or equivalent cassette.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-01-06meta-author
PAM XIAMEN offers Polyelectrolyte Multilayer Modified Silicon Substrate
We have a large selection of Polycrystalline Si wafers.
Please let us know what specs and quantity you would like us to quote?
Below is just one recent order!
Si Wafer
Polycrystalline
3″, 350um, DSP
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-02-26meta-author
The ability to grow thin GaN layers on Si substrates has led to the development of lateral high power and high-speed devices such as GaN HEMTs. These devices have already demonstrated promising performance and have been adopted for mass market. But lateral devices require [...]
2020-01-20meta-author
PAM XIAMEN offers Wide Band Gap semiconductors.
Wide Band Gap semiconductors (WBG or WBGS) are semiconductor materials with relatively large band gaps compared to typical semiconductors. A typical semiconductor such as silicon has a band gap of 1-1.5 electron volts (eV), while a broadband gap [...]
2019-03-21meta-author
