What is GaAs?
GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs).
GaAs Basic Parameters at 300K
Crystal structure
Zinc Blende
Group of [...]
2012-05-14meta-author
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
2013-04-12meta-author
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13meta-author
PAM XIAMEN offers silicon wafers that we have with a (211) orientation.
Item
Type/Dopant
Orient.
Dia.
Thick (μm)
Surf.
Res Ωcm
Comment
PAM3037
n-type Si:Sb
[211] ±0.5°
4″
1,500 ±15
P/P
0.01-0.02
SEMI Test, 1Flat, Empak cst, Wafers can be polished for additional fee
PAM3038
n-type Si:Sb
[211] ±0.5°
4″
1600
C/C
0.01-0.02
Prime, 1Flat, Empak cst
PAM3039
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ >50
Prime, 1Flat, Empak cst
PAM3040
n-type Si:P
[211-5°] ±0.5°
3″
508
P/P
FZ 25-75
Prime, 1Flat, Empak [...]
2019-02-22meta-author
AlGaN template structure report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
2018-08-14meta-author
A fracture criterion for gallium arsenide wafers
The fracture of single crystal gallium arsenide (GaAs) semi-conducting wafers was studied. Prismatic beam specimens, cut at different crystallographic orientations from thin wafers, were loaded to failure in four-point bending. Fracture in these crystals occurred predominantly on the [...]
