LSAT CRYSTAL SUBSTRATES (LA,SR)(AL,TA)O3 CRYSTAL

PAM XIAMEN offers LSAT Crystal Substrates.

SPECIFICATIONS:  
Growth method: Czochralski method
Crystal structure: Cubic
Lattice parameter: a = 3.868 A
Melt point (℃): 1840
Density: 6.74(g/cm3)
Hardness: 6.5(mohs)
Dielectric constants: 22
Thermal expansion: 10 x 10-6 /K
Available Size: 10×3,10×5,10×10,15×15,20×15,20×20,Ф15,  Ф20,Ф1″ (1 inch),Ф2″ (2 inch), Ф2.6″ (2.6 inch). Special sizes and orientations are available upon request.
Thickness: 0.5mm, 1.0mm
Polishing: Single or double, Epi-face Ra < 0.5 nm
Crystal Orientation: <100>, <110>, <111> ±0.5º
Miscut: ±0.5°
Ra: ≤5Å (5µm × 5µm area)

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

Share this post