X-ray diffraction analysis of LT-GaAs multilayer structures

X-ray diffraction analysis of LT-GaAs multilayer structures

Multilayer structures of low-temperature-grown GaAs(LT-GaAs) into which ultra-thin layers containing excess As are periodically introduced are grown by molecular beam epitaxy. The concentration of excess As in the ultra-thin layers is determined by the analysis of the intensity of a satellite reflection of the multilayer structure along with a peak shift of the 400 Bragg reflection from that of the GaAs substrate. The analysis shows that the concentration of excess As in the ultra-thin layers is significantly higher than those of thick LT-GaAs layers grown under the identical condition of the fluxes and the substrate temperature.

Fig. 1. Model of one period of the LT-GaAs multilayer structure.

Source: Journal of Crystal Growth

If you need more information about X-ray diffraction analysis of LT-GaAs multilayer structures，please visit our website:https://www.powerwaywafer.com/, send us email at[email protected] or [email protected].

2013-11-25 Low dimensional structures, X-ray diffraction

Related Posts

What is the thinnest Silicon Wafers?

PAM XIAMEN offers thinnest Silicon Wafers. We have sold Silicon Wafers with a 2 micron thickness. But our biggest selling thin silicon wafer is: 100mm P(100) 1-10 ohm-cm 50um SSP and DSP TTV <2um Please let us know what specs you would like us to quote? For more information, [...]

2019-02-26meta-author

12″ Silicon Wafer

PAM XIAMEN offers 12″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 12″ 750 P/E MCZ 1-100 TEST grade, SEMI notch, TTV<25µm p-type Si:B [100] 12″ 775 P/P MCZ 1-100 Prime, SEMI notch, TTV<3µm p-type Si:B [100] 12″ 775 P/E MCZ 1-100 Prime, SEMI notch,TTV<10µm p-type Si:B [100] 12″ 775 P/P 0.01-0.02 Prime, SEMI notch,TTV<4µm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]

2019-03-04meta-author

LSGM single crystal substrate

PAM XIAMEN offers LSGM single crystal substrate. Now LSGM （La 0.95 Sr 0.05 Ga 0.95 Mg 0.05 O 3-δ） single crystal substrate is commercially available from PAM XIAMEN by contract growth via CZ method. LSGM has the advantage of a broad electrolytic domain with [...]

2019-05-10meta-author

LITAO3 LITHIUM TANTALATE CRYSTAL

PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal. Major capability parameter Material purity >99.995% Crystal structure M6 Unit cell constant a=5.154Å c=13.783 Å Melt point（℃） 1650 Density 7.45（g/cm3） Hardness 5.5~6（mohs） Color Colorless Index of refraction no=2.176 ne=2.180 （633nm） Through scope 0.4～5.0mm Resistance coefficient 1015wm Dielectric [...]

2019-03-13meta-author

Why do We Need High Purity Semi-insulating SiC Wafer?

When SiC wafer is used as the substrate of RF devices, it is required that SiC should be semi insulating and its resistivity should be greater than 10 ^ 6 Ω· cm. In fact, the resistivity of silicon carbide should be very high, but [...]

2020-08-25meta-author

Esia: semiconductor sales in line with seasonal patterns

As reported by Esia(European Semiconductor Industry Association), in January worldwide sales of semiconductors amounted to US$ 26.880 billion. These results are in line with seasonal patterns – as the first months of the year are usually slower for semiconductors – and represent a 2.7% [...]

2016-04-18meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.