X-ray diffraction analysis of LT-GaAs multilayer structures

  • Home
  • News
  • X-ray diffraction analysis of LT-GaAs multilayer structures
X-ray diffraction analysis of LT-GaAs multilayer structures
Multilayer structures of low-temperature-grown GaAs(LT-GaAs) into which ultra-thin layers containing excess As are periodically introduced are grown by molecular beam epitaxy. The concentration of excess As in the ultra-thin layers is determined by the analysis of the intensity of a satellite reflection of the multilayer structure along with a peak shift of the 400 Bragg reflection from that of the GaAs substrate. The analysis shows that the concentration of excess As in the ultra-thin layers is significantly higher than those of thick LT-GaAs layers grown under the identical condition of the fluxes and the substrate temperature.
 
Fig. 1. Model of one period of the LT-GaAs multilayer structure.
Source: Journal of Crystal Growth
If you need more information about X-ray diffraction analysis of LT-GaAs multilayer structures，please visit our website:https://www.powerwaywafer.com/, send us email atsales@powerwaywafer.com or powerwaymaterial@gmail.com.
2013-11-25 ,

Share this post

Related Posts

Why do We Need High Purity Semi-insulating SiC Wafer?

Why do We Need High Purity Semi-insulating SiC Wafer? When SiC wafer is used as the substrate of RF devices, it is required that SiC should be semi insulating and its resistivity should be greater than 10 ^ 6 Ω· cm. In fact, the resistivity [...]

2020-08-25meta-author
Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching

Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching Highlights •Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme. •InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template. •Overgrown [...]

2015-07-14meta-author
4″ FZ Prime Silicon Wafer-5

PAM XIAMEN offers 4″FZ Prime Silicon Wafer. 4″ Si wafer, R>20,000Ωcm Silicon, Si wafers orientation (100) dimensions 100 mm x 525µm (+/-25µm) thick. FZ >20 000 ohm.cm Ra<0.5 nm One side polished Ra<0.5nm (µelectronic grade) For more information, please visit our website: https://www.powerwaywafer.com, send [...]

2019-07-05meta-author
Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness

Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely [...]

2013-11-26meta-author , , ,
Impact of substrate off-angle on the m-plane GaN Schottky diodes

We investigated the effects of the substrate off-angle on the m-plane GaN Schottky diodes. GaN epitaxial layers were grown by metal–organic chemical vapor deposition on m-plane GaN substrates having an off-angle of 0.1, 1.1, 1.7, or 5.1° toward . The surface of the GaN epitaxial layers on [...]

2019-12-16meta-author
Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates

The epitaxy optimization studies of high-quality n-type AlInN alloys with different indium contents grown on two types of substrates by metalorganic vapor phase epitaxy (MOVPE) were carried out. The effect of growth pressure and V/III molar ratio on growth rate, indium content, and surface [...]

2015-09-11meta-author ,