A new concept for highly efficient THz photomixers based on quasi ballistic transport and thin LT-GaAs recombination layers

A phenomenon of LT-GaAs photoconductive switch triggered by 800nm femtosecond laser

The Ti oxide is used as insulator between the electrodes to substitute the air gap of photoconductive semiconductive switch (PCSS). The width of the oxide is smaller than 100nm, the electrodes and substrate’s materials are Ti and LT-GaAs respectively. The simulation result indicated that the LT-GaAs photoconductive semiconductive switch doesn’t work in the linear mode absolutely when it is triggered by Femtosecond Laser with about 10 voltages electric field bias. The pulse width of the femtosecond Laser is about several tens of fs, the central wavelength is 800nm, and the pulse energy is about 1mJ. In the tail of the voltage or current output characteristic of the photoconductive switch, another little positive peak appeared with a short time delay after the main linear pulse. This phenomenon is different from the normal switch witch uses several tens μm width’s air gap. In this paper, this phenomenon is analyzed and the method to avoid such kind of non-linearity output is discussed.

Source:IEEE

If you need more information about A phenomenon of LT-GaAs photoconductive switch triggered by 800nm femtosecond laser，please visit our website:https://www.powerwaywafer.com, send us email at [email protected] or [email protected].

2014-03-24 LT-GaAs

Related Posts

Silicon-Nitride on Corning 7980

PAM XIAMEN offers Silicon-Nitride on Corning 7980. Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x10x0.5mm Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x5x0.5mm For more information, please visit [...]

2019-04-29meta-author

60+1mm FZ Si Ingot -2

PAM XIAMEN offers 60+1mm FZ Si Ingot -2 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]

2020-03-11meta-author

Why Make HEMT Device on Semi-insulating Substrate?

By analyzing the MOSFET, it is known that the switch can be realized by controlling the change of the PN junction. Field effect transistor Type Name Principle FET JFET Junction PN junction MOSFET Metal oxide semiconductor MESFET Metal semiconductor Schottky junction MODFET Modulation doping HEMT High electron mobility In fact, a Schottky junction can be realized through another structure. Definitions of Junctions Starting from [...]

2021-04-02meta-author

CZT High Resolution Pixel Detector

CZT High Resolution Pixel Detector PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution. Specification Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 10.0×10.0mm2 Thickness 2.0mm 5.0mm Pixel size 1.1×1.1mm2 Pixel array 8×8 Electrode material Au Operation temperature -20℃-+40℃ Energy range 20KeV~700MeV 20KeV~700MeV Energy resolution(22℃) <6%@59.5KeV <4.5%@122KeV <3%@662KeV Defective pixel(DP) 10℃~40℃ Storage temperture 20%-80% Remarks Customized available Spectrum Features Long-time stability [...]

2019-04-24meta-author

GLOBAL DEAL TO SLASH TECH TARIFFS GOES INTO FORCE, BUT WITH A HITCH

GLOBAL DEAL TO SLASH TECH TARIFFS GOES INTO FORCE, BUT WITH A HITCH After more than four years of often turbulent negotiations to expand the Information Technology Agreement (ITA), tariffs on roughly $1.3 trillion in trade in tech products finally start marching to zero today. [...]

2016-07-29meta-author

Ge single crystal(Prime grade)-5

PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(110). 2″ Diameter Wafer 2″ wafers(110) Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.1-0.5 ohm.cm Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.82-0.98ohm.cm Ge Wafer (110)N [...]

2019-04-25meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.