PAM XIAMEN offers 1″ silicon wafers.
If you don’t see what you need, pleaes email us your specs and quantity.
Item
Dia
Thickness (um)
Orientation
Type
Dopant
Resistivity
(Ohm-cm)
Polish
Remark
PAM1901
25.4mm
20000um
<111>
P
B
>1000
DSP
FZ
PAM1902
25.4mm
400um
<100>
P
B
ANY
SSP
Thickness is: 400+/-100um.
PAM1903
25.4mm
500um
<100>
ANY
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM1904
25.4mm
280um
<111>
Undoped
Undoped
>2000
SSP
Intrinsic FZ
PAM1905
25.4mm
73.5um
<100>
Undoped
Undoped
>5000
DSP
FZ, Float Zone
PAM1906
25.4mm
500um
<100>
P
B
.01-.05
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM1907
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, 1Flat, Soft cst
PAM1908
Intrinsic Si:-
[111]
1″
280um
P/E
FZ [...]
2019-02-21meta-author
PAM XIAMEN offers 3″ Silicon Wafer-17 as follows, while silicon wafer list includes, but not limited to the following.
Silicon wafers, per SEMI Prime,
P/P 4″Ø×300±25µm,
p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm,
TTV<10µm, Bow<40µm, Warp<40µm,
Both-sides-polished, SEMI Flats (two),
Primary Flat length 32.5±2.5mm, orientation 110±1°。
Secondary Flat length 18±2mm, orientation 90°±5°
Sealed in Empak cassette
For [...]
2019-11-26meta-author
In Q4 Discount prices for Universities and Research Institutes
We are pleased to inform that PAM-XIAMEN announces the introduction of special Q4 discount prices for universities and research institutes for small size GaN C-plane with n-type and semi-insulating wafers, which are currently on the company’s [...]
2012-10-18meta-author
PAM XIAMEN offers 3″ Silicon Oxide Wafer
3″ Silicon Oxide Wafer
Diameter (mm): 76mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any
Particles [...]
2020-04-24meta-author
Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of [...]
PAM XIAMEN offers GaAs Gallium Arsenide crystal substrates.
MAIN PARAMETERS FOR GAAS GALLIUM ARSENIDE CRYSTAL SUBSTRATES
single crystal
Dopant
Conduction type
Carrier concentration cm-3
Growth method
Max size
GaAs
None
SI
/
LEC
Si
N
>5×10^17
HB
Cr
SI
/
Dia. 3″
Fe
N
~2×10^18
Zn
P
>5×10^17
Sizes (mm)
25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm, 2 inch diameter
Special size and orientation options are available upon request
Surface Roughness
Surface roughness(Ra): <= 5A
Polishing
Single or double side polished
For [...]
2019-03-11meta-author