PAM XIAMEN offers Single Crystal Quartz Wafers.
All single crystal quartz should be grown from one special seed.
And the different cut type will cause the different seed location.
One type is inside the wafer names “with seed”, the other type is not inside the wafers, so [...]
2019-02-27meta-author
The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing [...]
2019-11-13meta-author
This paper reports the mechanical and electrical characteristics of Ge/Ge interfaces prepared by room-temperature surface-activated bonding (SAB). Bonded Ge/Ge wafer pairs with high bonding strength equivalent to that of the bulk material were achieved without any heat treatment. It was found that the bonding [...]
2018-11-12meta-author
Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates
Structural properties of GaN films grown on vicinal sapphire (0001) substrates with various vicinal angles by plasma-assisted molecular beam epitaxy are investigated. High-resolution x-ray diffraction (HRXRD) results reveal the dramatic [...]
2013-05-13meta-author
Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness
An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely [...]
The International Technology Roadmap for Semiconductors (ITRS) identifies production test data as an essential element in improving design and technology in the manufacturing process feedback loop. One of the observations made from the high-volume production test data is that dies that fail due to [...]
