Lawrence Livermore National Laboratory (LLNL) has installed and commissioned the highest peak power laser diode arrays in the world, representing total peak power of 3.2 megawatts (MW).
To drive the diode arrays, LLNL needed to develop a completely new type of pulsed-power system, which supplies [...]
2017-07-04meta-author
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM1947
P/B
[100]
2″
280um
P/E
0-100 ohm-cm
Test Grade with flat
PAM1948
N/Ph
[100]
2″
280um
P/E
0-100 ohm-cm
Test Grade with flat
PAM1949
P/B
[100]
2″
280um
P/E
1-10 ohm-cm
Prime Grade with Flat
PAM1950
N/Ph
[100]
2″
280um
P/E
1-10 ohm-cm
Prime Grade with Flat
PAM1951
P/B
[100]
2″
280um
P/E
0.001-0.005 ohm-cm
Prime Grade with Flat
PAM1952
P/B
[111]
2″
280um
P/E
1-10 ohm-cm
Prime Grade with Flat
PAM1953
P/B
[111]
2″
280um
P/E
0.001-0.005 ohm-cm
Prime Grade with [...]
2019-02-18meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
5″Ø×420mm n-type Si:As[100], Ro=(0.0032-0.0034)Ohmcm
5″Ø (5 ingots: 540mm, 254mm, 607mm, 644mm, 201mm), n-type Si:As[100], (0.001-0.007)Ohmcm
5″Ø×375mm ingot n-type Si:As[100], Ro=(0.0021-0.0039)Ohmcm
5″Ø×330mm ingot n-type Si:As[100], Ro=(0.0022-0.0040)Ohmcm
5″Ø×416mm ingot n-type Si:As[100], Ro=(0.0024-0.0029)Ohmcm
5″Ø×273mm ingot n-type Si:As[100], Ro=(0.0024-0.0040)Ohmcm
5″Ø×388mm ingot n-type Si:As[100], Ro=(0.0029-0.0044)Ohmcm
5″Ø×340mm ingot n-type Si:As[100], Ro=(0.0032-0.0044)Ohmcm
5″Ø×290mm ingot [...]
2019-03-08meta-author
Solid-state spin color center is an important research platform for quantum information processing, and diamond nitrogen vacancy (NV) color center is its outstanding representative. Since the detection of a single diamond NV color center at room temperature was reported by a German research team [...]
2022-06-14meta-author
PAM XIAMEN offers Cu Coated Silicon.
Cu Film on Silicon Wafer, 4″ , 400 nm Thick, – Cu-Ti on Si-4-400nm
Cu Film on Ta/Silicon Wafer, 4″ , 100 nm Thick, – Cu-Ta-Si-4-100nm
Cu Film on Ta/thermal oxide/Silicon Wafer, 4″ , 400 nm Thick, – [...]
2019-04-26meta-author
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.
Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide.
2 inches in diameter
The silicon substrate
orientation<100>
resistivity>10Ωcm
The insulating thermal oxidation film thickness 300nm
Polishing: one-sided for microelectronics [...]
2019-07-02meta-author