PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow:
1. Specifications of GaAs Epiwafer with AlGaAs Multilayers
VCSEL, 980nm, GaAs epiwafer, 4″size
PAM210208
Layer No.
Material
Group
Repeat
Mole Fraction(x)
Strain(ppm)
PL(nm)
Thickness(nm)
Dopant
32
GaAs
–
–
–
–
–
156
C
31
Al(x)GaAs
–
–
0.04
–
–
50.5
C
30
Al(x)GaAs
–
–
0.87->0.04
–
–
20
C
29
Al(x)GaAs
–
–
0.87
–
–
59.7
C
28
Al(x)GaAs
–
16
0.04->0.87
–
–
20
C
27
Al(x)GaAs
–
0.04
–
–
51.5
C
26
Al(x)GaAs
–
0.87->0.04
–
–
20
C
25
Al(x)GaAs
–
0.87
–
–
59.7
C
24
Al(x)GaAs
–
–
0.04->0.87
–
–
20
C
23
Al(x)GaAs
–
–
0.04
–
–
32.9
C
22
Al(x)GaAs
–
–
0.80->0.04
–
–
20
C
21
Al(x)GaAs
–
–
0.98
–
–
20
C
20
Al(x)GaAs
–
–
0.8
–
–
61.6
C
19
GaAsP
–
–
–
–
–
–
UD
18
In(x)GaAs
–
–
–
–
970nm
–
UD
17
GaAsP
–
–
–
–
–
–
UD
16
In(x)GaAs
–
–
–
–
970nm
–
UD
15
GaAsP
–
–
–
–
–
–
UD
14
In(x)GaAs
–
–
–
–
970nm
–
UD
13
GaAsP
–
–
–
–
–
–
UD
12
Al(x)GaAs
–
–
0.87
–
–
59.7
Si
11
Al(x)GaAs
–
–
0.04->0.87
–
–
20
Si
10
Al(x)GaAs
–
–
0.04
–
–
51.5
Si
9
Al(x)GaAs
–
–
0.87->0.04
–
–
20
Si
8
Al(x)GaAs
–
6
0.87
–
–
59.7
Si
7
Al(x)GaAs
–
0.04->0.87
–
–
20
Si
6
Al(x)GaAs
–
0.04
–
–
51.5
Si
5
Al(x)GaAs
–
30
0.92->0.04
–
–
20
Si
4
Al(x)GaAs
–
0.92
–
–
59.8
Si
3
Al(x)GaAs
–
0.04->0.92
–
–
20
Si
2
Al(x)GaAs
–
0.04
–
–
51.5
Si
1
GaAs
–
–
–
–
–
500
Si
4 inch GaAs substrate Si doped; [...]
2021-04-02meta-author
PAM XIAMEN offers Borosilicate Float Glass from SCHOTT. We have a large selection of Schott Borofloat 33 glass wafers in all sizes. We have borofloat glass as thin as 100 microns. Borofloat 33 is the sanme as Pyrex 7740 and has the same anondic [...]
2019-02-27meta-author
Effects of mosaic structure on the physical properties of CdZnTe crystals
Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and [...]
2013-09-23meta-author
PAM XIAMEN offers 4″ Monocrystalline silicon wafers with insulating oxide
4″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author
PAM XIAMEN offers Au coated Silicon wafer /Microscope Slides.
High quality glass, standard microscope slides coated with 100nm of gold with a 5nm Titanium adhesion layer between the glass slide surface and the gold coating. Can be used for a wide range of nanotechnology, [...]
2019-04-26meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-111
.001-.005
300-350
P/E
PRIME
50.8
P
Boron
CZ
-110
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-110
1-20
250-300
P/E
PRIME
50.8
Any
Any
CZ
Any
Any
200-500
P/E
TEST
50.8
Any
Any
CZ
Any
Any
800-1000
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Any
Any
CZ
Any
Any
4900-5100
P/E
TEST
50.8
Intrinsic
Undoped
FZ
-100
5000-10000
275-325
P/E
PRIME
50.8
SI.
Undoped
VGF
-100
>1E7
325-375
P/E
PRIME
50.8
N
Si
VGF
4E+18
250-300
P/E
EPI
50.8
N
Si
VGF
-100
325-375
P/E
PRIME
50.8
P
Zn
VGF
-100
325-375
P/E
PRIME
50.8
Undoped
CZ
-100
>30
300-350
P/P
EPI
50.8
Undoped
CZ
-100
>30
350-400
P/E
EPI
50.8
N
Sb
CZ
(100)off 6-9 tow
.01-.04
150-200
P/E
EPI
50.8
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
50.8
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
50.8
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
50.8
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
50.8
R-Axis
CZ
300-350
P/E
TEST
50.8
N
Si
VGF
-100
275-325
P/E
PRIME
50.8
P
Zn
VGF
-100
275-325
P/E
PRIME
50.8
Si
Fe
VGF
-100
5000000
325-375
P/E
PRIME
50.8
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
50.8
Shipping Cassette
ePak
Holds25Wafers
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN [...]
2019-03-04meta-author