LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers

LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers

In this paper we report on the optimization of the MBE growth process for obtaining semi-insulating LT-GaAs layers applied in vertical-cavity surface-emitting-lasers. The technological conditions for growingLT-GaAs layers have been found and test processes for growing the laser structure at the optimum conditions have been performed. Although numerous optoelectronic applications of LT GaAs have been demonstrated we believe that this is one of the rare cases when LT GaAs has been used in semiconductor laser technology

Source:IEEE

If you need more information about LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers，please visit our website:https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.

2014-04-17 LT GaAs semi-insulating layers

Team deploys world’s highest peak-power laser diode arrays

Lawrence Livermore National Laboratory (LLNL) has installed and commissioned the highest peak power laser diode arrays in the world, representing total peak power of 3.2 megawatts (MW). To drive the diode arrays, LLNL needed to develop a completely new type of pulsed-power system, which supplies [...]

2017-07-04meta-author

50.8mm (2 Inch) Silicon Wafers-1

PAM XIAMEN offers 50.8mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM1947 P/B [100] 2″ 280um P/E 0-100 ohm-cm Test Grade with flat PAM1948 N/Ph [100] 2″ 280um P/E 0-100 ohm-cm Test Grade with flat PAM1949 P/B [100] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat PAM1950 N/Ph [100] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat PAM1951 P/B [100] 2″ 280um P/E 0.001-0.005 ohm-cm Prime Grade with Flat PAM1952 P/B [111] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat PAM1953 P/B [111] 2″ 280um P/E 0.001-0.005 ohm-cm Prime Grade with [...]

2019-02-18meta-author

Silicon Ingots-6

PAM XIAMEN offers Silicon Ingots. Material Description 5″Ø×420mm n-type Si:As[100], Ro=(0.0032-0.0034)Ohmcm 5″Ø (5 ingots: 540mm, 254mm, 607mm, 644mm, 201mm), n-type Si:As[100], (0.001-0.007)Ohmcm 5″Ø×375mm ingot n-type Si:As[100], Ro=(0.0021-0.0039)Ohmcm 5″Ø×330mm ingot n-type Si:As[100], Ro=(0.0022-0.0040)Ohmcm 5″Ø×416mm ingot n-type Si:As[100], Ro=(0.0024-0.0029)Ohmcm 5″Ø×273mm ingot n-type Si:As[100], Ro=(0.0024-0.0040)Ohmcm 5″Ø×388mm ingot n-type Si:As[100], Ro=(0.0029-0.0044)Ohmcm 5″Ø×340mm ingot n-type Si:As[100], Ro=(0.0032-0.0044)Ohmcm 5″Ø×290mm ingot [...]

2019-03-08meta-author

Silicon Vacancy (Vsi) — Spin Color Center in Silicon Carbide

Solid-state spin color center is an important research platform for quantum information processing, and diamond nitrogen vacancy (NV) color center is its outstanding representative. Since the detection of a single diamond NV color center at room temperature was reported by a German research team [...]

2022-06-14meta-author

Cu Coated Silicon

PAM XIAMEN offers Cu Coated Silicon. Cu Film on Silicon Wafer, 4″ , 400 nm Thick, – Cu-Ti on Si-4-400nm Cu Film on Ta/Silicon Wafer, 4″ , 100 nm Thick, – Cu-Ta-Si-4-100nm Cu Film on Ta/thermal oxide/Silicon Wafer, 4″ , 400 nm Thick, – [...]

2019-04-26meta-author

2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns-2

PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide. 2 inches in diameter The silicon substrate orientation<100> resistivity>10Ωcm The insulating thermal oxidation film thickness 300nm Polishing: one-sided for microelectronics [...]

2019-07-02meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers

LT GaAs semi-insulating layers applied in vertical-cavity surface-emitting lasers

Share this post

Related Posts

Team deploys world’s highest peak-power laser diode arrays

50.8mm (2 Inch) Silicon Wafers-1

Silicon Ingots-6

Silicon Vacancy (Vsi) — Spin Color Center in Silicon Carbide

Cu Coated Silicon

2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns-2

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers