P type GaAs(Gallium Arsenide) Wafer
PAM XIAMEN offers p type GaAs(100) Zn-doped crystal Wafer.
1.Wafer List:
GF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, single side polished.
GaAs Wafer – Growing Method: VGF (100) Zn doped P-type, , 2″x0.5 mm, single side polished, (1-5) x 10^19 /cm^3 [...]
2019-04-22meta-author
PAM XIAMEN offers 1″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111] ±0.5°
1″
50 ±10
P/P
1-100
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 4 wafers
n-type Si:P
[100]
1″
280
P/P
1-20
SEMI Prime
n-type Si:P
[100]
1″
280
P/E
1-5
SEMI
n-type Si:P
[100]
1″
1500
P/E
1-20
Prime,
n-type Si:P
[100]
1″
525
P/E
0.05-0.15
SEMI
n-type Si:P
[111]
1″
330
P/E
FZ >90
Prime
p-type Si:B
[100]
1″
775
P/E
8-12
SEMI Prime
p-type Si:B
[100]
24mm
300
P/E
1-100
Prime,
p-type Si:B
[100]
1″
300
P/E
1-10
Prime,
p-type Si:B
[100]
1″
500
P/E
1-10
p-type Si:B
[100]
1″
380
P/E
0.003-0.005
SEMI Prime
p-type Si:B
[100]
1″
275
P/E
0.002-0.005
Prime
n-type Si:P
[100]
1″
50 ±10
P/P
>20
SEMI Prime, TTV<5μm, in single wafer trays [...]
2019-03-08meta-author
PAM XIAMEN offers Lead Foil Tape.
Lead Foil Tape: 2″ W x 0.0063″ Thick x 36 Yard length
100% pure lead foil tape coated with a compounded synthetic rubber adhesive system which exhibits excellent adhesion to a wide variety of surfaces, especially to metal, [...]
2019-05-10meta-author
Highlights
•MOCVD growth of a p-GaN/i-InGaN/n-GaN (PIN) solar cell on ZnO/Sapphire templates.
•In-depth structural characterizations showing no back-etching of ZnO.
•Chemical lift-off and wafer-bonding of the structure on float glass.
•Structural characterizations of the device on glass.
Abstract
p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal [...]
PAM XIAMEN offers CdSe single crystal.
CdSe single crystal substrate, (0001) 10x10x1.0mm, 2sp Low Resistivity
CdSe single crystal
Orientation: (0001)
Type: N
Sizes: 10 x 10 +/- 0.1 mm
Thickness: 1.0 +/- 0.1 mm
Resistivities: < 1 ohm-cm
Surface Quality: two sides optical polished [...]
2019-04-19meta-author
PAM XIAMEN offers 6″Prime Silicon Wafer Thickness 1500±25μm.
Diameter 150mm
Thickness 1500±25μm
phosphorus, boron or Antimony doped boron,<100>
SSP
Resistivity 1-100ohm cm
with 200A thermal oxide and 1200A nitride
TTV < 15um
BOW < 80um
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author