M Plane Si-GaN Freestanding GaN Substrate

  • Home
  • News
  • M Plane Si-GaN Freestanding GaN Substrate

M Plane Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate

Item PAM-FS-GAN M-SI
Dimension 5 x 10 mm2
Thickness 380+/-50um
Orientation M plane (1-100) off angle toward A-axis 0 ±0.5°

M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type Semi-Insulating
Resistivity (300K) >106 Ω·cm
TTV ≤ 10 µm
BOW BOW ≤ 10 µm
Surface Roughness Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤  5 x 10 6cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20

Share this post

Related Posts

What are D263 Glass Wafers used for?

PAM XIAMEN offers D263 Glass Wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.           Our clients use our Schott D263 glass for the following applications: Touch Panel Controls Liquid Crystal Displays (LCD) Electroluminescent Displays Solar Cell Protective Glass Diam Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Grade 50.8mm 550um DSP 76.2mm 550um DSP 100mm 500um DSP 150mm 550um DSP 200mm 500um DSP 300mm 500um DSP For more information, please visit our [...]

2019-02-27meta-author
Single crystal 6H-SiC MEMS fabrication based on smart-cut technique

Single crystal 6H-SiC MEMS fabrication based on smart-cut technique A new single crystal silicon carbide (SiC) MEMS fabrication process is developed using a proton-implantation smart-cut technique. A 6H-SiC layer with 1.3 µm thickness has been achieved over an oxidized silicon substrate using the proposed technique. [...]

2018-08-22meta-author
InP Wafer

PAM XIAMEN offers InP Wafer. InP(100) InP (100) Sn-doped InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp InP (100)undoped InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp VGF InP (100) undoped, 2″ x 0.35 mm wafer, 1sp VGF InP (100) undoped, 2″ x [...]

2019-05-06meta-author
Silver(Ag) on Si wafer

PAM XIAMEN offers Silver(Ag) on Si wafer . Silver Film on Silicom Wafer ,Ag: 0.2 microns / ,Si(100) P-type R:1-20 ohm.cm Silver Metallic Film  Film Deposition by DC Sputtering  Silver Thickness: 0.2 microns Film Resistivity: N/A Film Crystallinity:  N/A Roughness, RMS:  4.87 nm and  < [...]

2019-04-29meta-author
Fused Silica Quartz Wafers Inventory JGS1, JGS2 and JGS3 50μm – >1,000μm

PAM XIAMEN offers Fused Silica Quartz Wafers. Please let us know if you have a custom spec you would like us to quote. Item Dia Thk Pol PAM3337 10mm Sq 500μm DSP PAM3338 50.8mm 100μm DSP PAM3339 76.2mm 50μm DSP PAM3340 100mm 500μm DSP PAM3341 100mm 1,000μm DSP PAM3342 150mm 500μm DSP The strain point for fused silica is at 983degree. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found [...]

2019-02-27meta-author
YAG Crystals-2

PAM XIAMEN offers YAG Er Doped Yttrium Aluminium Garnet Laser Crystal. PAM XIAMEN can supply a wide range of Er:YAG, Er doped Yttrium aluminium garnet single crystals and epi-ready crystal substrates to meet customer’s specific requirements. Specifications:  Crystal structure: cubic Lattice parameters: 12.01 Å Orientations available: <111> or <100> crystalline within 5° Melt [...]

2019-03-15meta-author