PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm.
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: [...]
2019-07-03meta-author
Through continuous efforts, PAM-XIAMEN has developed large-scale COP-free CZ silicon (Si) wafers, and effectively controlled the generation of COP in the ingot by improving the thermal field of crystal pulling, thereby achieving performance improvement and power consumption reduction. The 8-inch silicon wafer application process [...]
2022-06-06meta-author
White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates
We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by [...]
2018-07-12meta-author
PAM-XIAMEN can supply semiconductor wafers, more wafer specifications please refer to https://www.powerwaywafer.com/products.html. If necessary, we will offer PL (photoluminescence) spectroscopy for the semiconductor wafers.
1. What is PL?
About PL, it refers to the self-emission light produced by a material after being excited by light. When [...]
2022-08-09meta-author
PAM XIAMEN offers MgF2 crystal.
MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Tetragonal
a = 4.64
1255 oC
3.18
6 (mohs)
13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c
ho 1.37740
c = 3.06
he 1.38945
MgF2 [...]
2019-05-10meta-author
As one of leading silicon carbide wafer manufacturers, PAM-XIAMEN offers you SiC substrate with 1mm or 2mm thickness. Silicon carbide (SiC) substrate is the cornerstone of the application of gallium nitride (GaN) and silicon carbide in the third generation of semiconductor materials. In recent years, [...]
2022-05-10meta-author