PAM XIAMEN offers high-quality, low-cost silicon mirros. Please let us know what specs we can quote for you?
Below are some diagrams of Silicon Mirros that we have recently sold.
NOTES:
1、MATERIAL:SILICON,MARROR GRADE
2、FINISH:
SURFACE S1-FLATNESS λ/10
SURFACE QUALITY 40`20 SCRATCH-DIG
SURFACE S2-COMMERICIAL POLISH
ALL OTHER SURFACES-GROUND
3、n/a
4、INDICATE SURFACE S1 WITH PENCIL OR [...]
2019-02-26meta-author
PAM XIAMEN offers FTO Coated on Conventional Glass.
FTO Glass Substrate (TEC 7) 1″ x 1″ x 1.1 mm, R: 7-10 ohm/sq 25pcs
FTO Glass Substrate (TEC 7) 100 x 100 x 1.1 mm, R: 7-10 ohm/sq 5 pcs
FTO Glass Substrate (TEC 7) [...]
2019-04-28meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
p-type Si:B
[100]
3″
300
P/P
0.5-10.0
SEMI Prime, TTV<2μm, Empak cst
p-type Si:B
[100]
3″
315
P/P
0.5-10.0
SEMI Prime, TTV<3μm
p-type Si:B
[100]
3″
3,050 ±50
C/C
>0.5
1Flat, Individual cst (can be ordered singly)
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers
p-type Si:B
[100]
3″
250
BROKEN
0.15-0.20
Broken wafers, in Epak cst
p-type Si:B
[100]
3″
356
P/P
0.015-0.020
SEMI
p-type Si:B
[100-4° towards[110]] ±0.5°
3″
230
P/E
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
3″
300
P/E
0.01-0.02
SEMI Prime
p-type [...]
2019-03-06meta-author
GaAs based AlGaInP laser diode wafer can be supplied by PAM-XIAMEN with a band of 635nm. The III-V AlGaInP semiconductor material that can be lattice matched with the GaAs substrate has a wide direct band gap (1.9~2.3eV), a wide range of luminous wavelengths and [...]
2022-06-07meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2797
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2798
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime, 1Flat, Empak cst
PAM2799
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ [...]
2019-02-22meta-author
Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling
On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]
2018-04-19meta-author