M Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers M Plane U-GaN Freestanding GaN Substrate

Item	PAM-FS-GAN M-U
Dimension	5 x 10 mm²or 5 x 20 mm²
Thickness	380+/-50um
Orientation	M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type	N-type / Undoped
Resistivity (300K)	< 0.1 Ω·cm
TTV	≤ 10 µm
BOW	BOW ≤ 10 µm
Surface Roughness	Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished.
Dislocation Density	≤5 x 10⁶cm^-2
Macro Defect Density	0 cm-2
Useable Area	> 90% (edge exclusion)
Package	each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

For more information, please contact us email at [email protected] and [email protected]

2020-08-17

M Plane Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]

2020-08-20meta-author

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2019-05-10meta-author

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PAM XIAMEN offers 60+1mm FZ Si Ingot -2 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]

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GaAs Substrate for LED with Silicon Dopant

The GaAs substrate (gallium arsenide substrate) doped with silicon, grown by VGF, is available from GaAs substrate supplier – PAM XIAMEN, which is for fabricating LED (light-emitting diodes). GaAs is zinc blende crystal structure. The GaAs substrate orentation is (100)150± 0.50 off toward (111)A with [...]

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[email protected] [email protected]

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M Plane U-GaN Freestanding GaN Substrate

M Plane U-GaN Freestanding GaN Substrate

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