How is silicon carbide (SiC) chip made? Generally speaking, chips are semi-finished products that have been cut from wafers. PAM-XIAMEN can offer SiC wafers for making chips, more specifications please refer to https://www.powerwaywafer.com/sic-wafer. Each wafer integrates hundreds of chips, and each chip consists of [...]
2022-07-27meta-author
PAM XIAMEN offers Nb:SrTiO3 Niobium doped Strontium Titanate Crystal and Substrates. Nb: SrTiO3, Niobium doped Strontium Titanate Crystal and Substrates Main Parameters Nb:SrTiO3 A B C D Nb Concentration (wt%) Customized 0.7 0.5 0.05 Resistivity ohm-cm Customized 0.007 0.05 0.08 Migration rates cm2/vs Customized 8.5 8.5 6.5 Characteristics Nb: SrTiO3 and SrTiO3 have a similar structure, but Nb: STO has an high electrical conductivity. Typical STO are insulators Size 10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm Ф15, Ф20, Ф [...]
2019-03-14meta-author
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 N Phos CZ -100 1-20 500-550 P/E/WTOx 100 N Phos CZ -100 1-50 2900-3100 P/E PRIME 100 N Phos CZ -100 50-70 4850-5050 P/E PRIME 100 N Phos CZ -100 1-50 5900-6100 P/E PRIME 100 N Phos CZ -100 >10 9900-10100 P/P PRIME 100 N Phos CZ -111 1-10 4000-6000 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/E PRIME 100 N Phos FZ -111 > 20000 275-325 P/P PRIME 100 N Phos FZ -111 2000-4000 275-325 P/P PRIME 100 N Phos CZ -111 450-500 P/P PRIME 100 N Phos FZ -111 > 20000 475-525 P/P PRIME 100 N As CZ -111 .001-.005 500-550 P/E PRIME 100 N Phos CZ -111 1-20 500-550 P/E PRIME 100 N Phos FZ -111 2000-4000 500-550 P/P PRIME 100 N Phos CZ -111 1-20 4800-5200 P/E PRIME 100 N Phos CZ -111 1-3 11300-11500 P/E PRIME 100 N Phos CZ -110 450-500 P/P PRIME 100 N Phos CZ -110 1-20 500-550 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 175-225 P/P PRIME 100 P Boron CZ (100)-4 0.01-0.02 200-250 P/E PRIME 100 P Boron CZ (100)-4 0.01-0.02 325-375 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth [...]
2019-03-04meta-author
PAM XIAMEN offers 3″ FZ Silicon Wafer Thickness:229-249μm. 3″ Si FZ Diameter 76-76.6mm Thickness 229-249μm Resistivity 39-47Ωcm TTV ≤10μm RRG ≤ 7% about 1.5mil is etched from the surfaces in order to remove any surface damage 1.5mil = 1.5*25.4= 38.1μm 1.1 Wafers are to be [...]
2019-08-22meta-author
PAM-XIAMEN can offer LED epitaxy wafers and is able to offer GaN foundry services & supplies for LEDs. The GaN foundry services include OEM growth service, COW process and various test services. Specifically as follows: 1. OEM Service – Customized AlGaN-based Thin Film Epi Structure We [...]
2022-11-22meta-author
The development of solid state physics, inorganic chemistry, organic chemistry, physical chemistry and other disciplines, in-depth research on the structure and physical properties of matter, has promoted the research and understanding of the nature of materials. Therein, semiconductor material is one crucial part of [...]
2022-08-29meta-author