Main-amplifier

PAM-02A is an amplifier which used for shaping and amplifying signals comes from scintillation detector, proportional counter and semiconductor detector.
PAM-02A integrates amplifier circuit and SK shaping circuit. With ordered cable, it can direct pulse signal which comes from amplifier into multi-channel pulse analyzer.

main-amplifier

1. Main-amplifier Specification

Power Consumption	<0.43W
Power	±12V
Operation temperature	-20℃-+40℃
Signal output	0-5V Quasi-gaussian signal
Power interface	3 pins aviation plug
Gain adjustment	X10,X25,X50
Gain fine-tuning	2-12 times continuously adjustable
Time to peak	1.1us、1.9us、2.8us time alternative
Dimension	103×97×40.5mm3
Weight	324.6g

2. Main Electronic Amplifier Spectrum

3. Main Amplifier Features

Compact size
High sensitivity
Changeable interface
Low noise, low offset

4. Main Amp Applications

Nuclear science and technology
Energy spectrum detection

For more information, please contact us email at [email protected] and [email protected].

2019-04-25

Related Posts

GaAs pHEMT Epi Wafer

PAM-XIAMEN can offer AlGaAs / GaAs p-HEMT (pseudomorphic high electron mobility transistor) heterostructure epitaxial wafer grown by MBE or MOCVD process. The heterostructure has a high-mobility conduction channel formed by two-dimensional electron gas, which is an ideal material for wireless applications. The line width [...]

2021-12-07meta-author

GaSb (Gallium Antimonide) Substrate

GaSb (Gallium Antimonide) crystal substrate is available with P type or N type in various sizes. The minimum value of GaSb substrate mobility can reach 200 cm2/V.s, and the maximum can reach 3500 cm2/V.s. PAM-XIAMEN’s gallium antimonide semiconductor material is a single crystal grown by a special [...]

2019-03-12meta-author

AlGaInP LED Chip Sepcification

AlGaInP LED Chip Sepcification · Orange LED Wafer Substrate: 　　 P+GaAs p-GaP p-AlGaInP MQW n-AlGaInP DBR n-ALGaAs/AlAs Buffer GaAs substrate ·Chip Sepcification (Base on 7mil*7mil chips) 　　　　 Parameter Chip Size 7mil(±1mil)*7mil(±1mil) Thickness 7mil(±1mil) P Electrode U/L N Electrode AU Structure Such as right-shown ·Optical-elctric characters 　　　　　　 Parameter Condition Min. Typ Max. Unit Forward voltage If=10μA 1.35 ┄ ┄ V Reverse voltage If=20mA ┄ ┄ 2.2 V Reverse current V=10V ┄ ┄ 2 μm Wavelength If=20mA 565 ┄ 575 nm Half wave width If=20mA ┄ 10 ┄ nm ·Light intensity characters 　　　　　　 Brightness code LA LB LC LD LE LF LG LH IV(mcd) 10-15 15-20 20-25 25-30 30-35 35-40 40-50 50-60 Source:PAM-XIAMEN If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email [...]

2014-11-04meta-author algainp laser diode, algainp led structure, algainp uhb-led

2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns

PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. 2 inch in diameter wafers Monocrystalline silicon with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 microns, Warping <35 microns For more information, please visit our website: [...]

2019-07-01meta-author

Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd

Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd Powerway wafer develops and manufactures wafers with Gallium Arsenide (GaAs), Gallium Nitride (GaN) technologies advanced high-performance RF solutions for customers worldwide. We are a leading semiconductor wafer in market serving customers in mobile devices,3G and 4G base station,WLAN,WiMAX,GPS,defense and aerospace markets. We have GaAs [...]

2012-06-20meta-author

YAG Crystals-2

PAM XIAMEN offers YAG Er Doped Yttrium Aluminium Garnet Laser Crystal. PAM XIAMEN can supply a wide range of Er:YAG, Er doped Yttrium aluminium garnet single crystals and epi-ready crystal substrates to meet customer’s specific requirements. Specifications: Crystal structure: cubic Lattice parameters: 12.01 Å Orientations available: <111> or <100> crystalline within 5° Melt [...]

2019-03-15meta-author

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.