Silicon carbide (SiC) is a compound semiconductor material composed of carbon and silicon elements, and is called wide-bandgap semiconductor material because the band gap is greater than 2.2eV. PAM-XIAMEN can provide N-type and semi-insulating SiC wafers. More specifications of SiC wafer please visit https://www.powerwaywafer.com/sic-wafer.
How SiC wafers are made? You can follow the link https://youtu.be/HeSXVKLj8kg to watch the video of manufacturing process.
Firstly, use high-purity silicon powder and high-purity carbon powder as raw materials to grow SiC single crystals by physical vapor transport (PVT).
Secondly, use multi-wire dicing equipment to cut SiC crystal into thin slices with thickness of no more than 1 mm.
Thirdly, the wafers are ground to the desired flatness and roughness through diamond slurry of different particle sizes.
Fourthly, SiC wafers undergo mechanical polishing and chemical mechanical polishing to obtain mirror-surface SiC polished wafers.
Then, use optical microscopes and other instruments to detect the micropipe density, surface roughness, resistivity, warp, TTV, surface scratches and other parameters of SiC wafers.
Finally, SiC polished wafers are cleaned with cleaning agent and pure water to remove surface contaminants such as polishing liquid, and then the wafers are blown and dried by ultra-high-purity nitrogen gas and a drying machine.
After that, use chemical vapor deposition and other methods to generate SiC epitaxial wafers on substrates, and finally make related devices.
Because of its superior physical properties: high band gap, high electrical conductivity, high thermal conductivity, SiC wafers are widely used in 5G communications, smart grids, new energy vehicles, high-speed train and other fields, and have huge market potential.
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