silicon ingot with FZ Intrinsic undoped, MCC lifetime more than 1000Ωcm

  • Home
  • News
  • silicon ingot with FZ Intrinsic undoped, MCC lifetime more than 1000Ωcm

silicon ingot with FZ Intrinsic undoped, MCC lifetime more than 1000Ωcm

PAM-XIAMEN offers silicon ingot with FZ Intrinsic undoped, MCC lifetime (Minority Charge Carrier Lifetime) more than 1000Ωcm.

An intrinsic(pure) semiconductor, also called an undoped semiconductor or i-type semiconductor,
is a pure semiconductor without any significant dopant species present. The number of charge carriers
is therefore determined by the properties of the material itself instead of the amount of impurities.
In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p.
This may even be the case after doping the semiconductor, though only if it is doped with both donors
and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped.
Crystal# Diameter
(mm)		 Orientation Lenth
(mm)		 Weight
(kg)		 Ingot Head Central Resistivity A Ingot Head Spot Measurement A1 Ingot Head Spot Measurement A2 Ingot End Central Resistivity B Ingot End Spot Measurement B1 Ingot End Spot Measurement B2 MCC lifetime
A
(μs)		 MCC lifetime
B
(μs)
1806A-929-2-1 100 <111> 135 2.505 86000 72000 65800 25000 43000 30000 1020 1020
FN100A1801A-621-3 100 <111> 293 5.505 32000 62000 43000 33000 65000 37000 1150 1150
1138-4 100 <111> 152 2.830 45000 96000 61000 38000 85000 40000 1150 1150
512-1-1-1 100 <111> 114 2.145 180000 180000 180000 32000 170000 145000 1020 1020
Q: Please tell me more about your MCC lifetime measurement. How do you measure and guarantee the MCC lifetime?
A: Normally, μPCD-microwave photoconductivity decay is used to measure the minority charge carrier lifetime (MCC lifetime)
     of the wafer quickly, without contact and without damage. Specifically, Using a laser with a wavelength of 904 nm to excite
     the silicon wafer (for silicon, the implantation depth is about 30 μm), electron hole pairs are generated, resulting in an increase
     in the conductivity of the sample. When the external light is removed, the conductivity decays exponentially with time.
     This trend is indirect. Reflecting the attenuation trend of the minority carrier number, the lifetime of minority carriers (MCC lifetime)
     can be obtained by microwave(Frequency 10.225GHz) detection of the conductivity of the silicon wafer with time.
     Attached schematic diagram of measuring the lifetime of minority materials by microwave photoconductive attenuation method
Silicon Ingot, FZ intrinsic undoped, MCC lifetime

Silicon Ingot, FZ intrinsic undoped, MCC lifetime

 

 

 

 

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system.Test report is provided for each shipment, and each wafer are warranty.

2019-03-15

Share this post

Related Posts

GaN on Silicon Wafer

As one of the leading GaN on silicon companies, PAM-XIAMEN offers GaN on Silicon wafer Substrate. Single crystal silicon wafer substrate is undoubtedly the most potential substrate material for growing III Nitride template due to the advantages of high quality, low price, easy cleavage and etc. The [...]

2019-04-22meta-author
Aluminium gallium arsenide epi wafer

Aluminium gallium arsenide epi wafer (AlGaAs or AlxGa1−xAs) is a semiconductor wafer material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 – this indicates an arbitrary [...]

2020-07-17meta-author
Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining

Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining   This paper investigates the slicing of germanium wafers from single crystal, gallium-doped ingots using wire electrical discharge machining. Wafers with a thickness of 350 μm and a diameter of 66 mm were cut [...]

2013-10-11meta-author , ,
MgO single crystal substrate-3

PAM XIAMEN offers MgO single crystal substrate. MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]

2019-05-13meta-author
LITAO3 LITHIUM TANTALATE CRYSTAL

PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.                                             Major capability parameter Material purity >99.995% Crystal structure M6 Unit cell constant a=5.154Å   c=13.783 Å Melt point（℃） 1650 Density 7.45（g/cm3） Hardness 5.5~6（mohs） Color Colorless Index of refraction no=2.176 ne=2.180 （633nm） Through scope 0.4～5.0mm Resistance coefficient 1015wm Dielectric [...]

2019-03-13meta-author
Ge single crystal(Prime grade)-5

PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(110). 2″ Diameter Wafer 2″ wafers(110) Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.1-0.5 ohm.cm Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.82-0.98ohm.cm Ge Wafer (110)N [...]

2019-04-25meta-author