PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
GaN LED Epi on Sapphire
Powerway Wafer offers GaN LED Epi on flat or patterned Sapphire as follows:
100mm wafers of blue GaN LED epi layer on c-plane sapphire, 445-475nm (PAM-191010-GaN-LED)
100mm wafers of green GaN LED epi layer on c-plane sapphire, 510-530nm
Q1:What is the typical rms [...]
2020-03-18meta-author
M Plane Si-GaN Freestanding GaN Substrate
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-SI
Dimension
5 x 10 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
AlGaInP epi wafer
AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.
AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.
Specs of AlGaInP wafers on chips
AlGaInP [...]
PAM XIAMEN offers Titanium Oxide TiO2 Crystal Substrates.
Main Parameters
Crystal structure
Tetragonal, Rutile
Unit cell constant
a=4.5936Å c=2.9582 Å
Density
4.26 (g/cm3)
Melting point
1870 ℃
Dielectric constants
dη/dT: a: -0.72×10^-6/k, c: -0.42×10^-6/k
Linear expansion coefficient
7.14 x 10-6 /℃ along a axis
9.19 x 10-6 /℃ along c axis
Hardness
7 (mohs)
Polishing
Single or double side polished
Size
5×5×10mm, 5×10×10mm, 10×10×0.5mm, other [...]
2019-03-15meta-author
Al2O3 (Sapphire)
PAM XIAMEN offers high-quality Al2O3 (Sapphire) with C-Plane (0001) orientation at different size from 5 x 5mm2 to 4”diameter:
1 square Al2O3 substrate 5x5mm,10x10mm&0.25″x0.25″
Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 1sp – ALC=> PAM
Al2O3 Sapphire Wafer, C-plane (0001), 5x5x0.5mm, 2sp – ALC=> PAM
Al2O3- Sapphire Wafer, [...]
2019-04-16meta-author