Metal Deposition on Silicon Wafer

Metal Deposition on Silicon Wafer

Silicon wafers with various metal depositions are for sale in sizes from 2 inch to 12 inch. Metal deposition on silicon wafer is usually processing on the substrate surface, and thickness of the substrate typically is 300um~700um. A wafer list is shown below for your reference:

1. Wafer List of Metal Deposition on Silicon Wafer

No. Material Size(inch) Surface Finished Type Thickness (um) Film Thickness(nm) Resis.(ohm.cm) Reference Edge
M2 Gold Coated Silicon Wafer 4 SSP N100 450±15 10nmCr+100nmAu 0.01~0.02 2
M4 Gold Coated Silicon Wafer 2 SSP P100 430±10 20nmTi+100nmAu 0~0.005
M5 Gold Plated Silicon Wafer 2 SSP N100 430±10 20nmTi+1200nmAu 0~0.05 1
M14 Copper Coated Silicon Wafer 6 SSP N100 675±25 2000nmCu 1~100
M15 Aluminum Coated Silicon Wafer 8 SSP P100 700±25 500nmAl 1~100
M18 Copper Plated Si Wafer 12 SSP P100 700±25 1000nmCu 1~100
M19 Copper Coated Si Wafer 12 SSP P100 700±25 500nmCu 1~100
M20 Copper Plated Si Wafer 6 SSP N100 625±25 125nmCu 0.01~0.02
M21 Gold Coated Silicon Wafer 2 SSP P100 400±15 10nmCr+100nmAu 0~0.0015
M22 Gold Plated Silicon Wafer 2 SSP N100 280±15 10nmCr+100nmAu 0~0.05
M33 Platinum Coated Silicon Wafer 2 SSP P100 430±15 30nmTi+150nmPt 0~0.0015
M34 Gold Plated Si Wafer 4 DSP 100 110±25 10nmCr-+50nmAu 0.01~0.05
M35 Gold Plated Si Wafer 6 DSP 100 200±25 10nmCr+50nmAu 0.005~0.01
M36 Gold Coated Si Wafer 6 SSP N100 625±25 10nmCr+50nmAu 0.01~0.02
M37 Gold Coated Si Wafer 4 DSP P100 200±10 50nmCr+10nmAu 2~3
M40 Platinized Si Wafer 4 SSP P100 515±15 300nmSi02+30nmTi+300nmPt 0.008~0.012 2
M41 Platinized Si Wafer 4 SSP P100 525±25 300nmSi02+30nnTi+300nmPt 0.01~0.02 2
M42 Au Coated Si Wafer 6 DSP 100 200±25 10nmCr+50nmAu 0.005~0.01
M43 Pt Coated Si Wafer 4 SSP P100 500±15 300nmSi02+30nmTi+150nmPt 0~0.0015 2
M44 Pt Plated Si Wafer 4 SSP P100 500±15 500nmSi02+30nmTi+150nmPt 0~0.0015 2
M46 Au Plated Si Wafer 4 SSP N100 525±15 30nmCr+125nmAu 0~0.005
M47 Cu Plated Si Wafer 4 SSP N100 525±15 30nmCr+100nmCu 0~0.005
M49 Cu Plated Si Wafer 4 SSP P100 525±15 30nmCr+100nmCu 8~12 2
M50 Au Plated Si Wafer 4 SSP N100 450±15 90nmSi02+10nmCr+100nmAu 0.012~0.018
M51 Pt Coated Si Wafer 4 SSP P100 500±10 280nmSi02+150nmPt 0~0.0015 1
M52 Cr Coated Si Wafer 4 SSP N100 525±25 200nmCr 0.01~0.02 2
M54 Ag Coated Si Wafer 4 SSP P100 500±10 30nmCr+200nmAg 0~0.05 2
M55 Cu Coated Silicon Wafer 4 DSP P100 500±10 20nmTi+100nmAu 0~0.05 2
M56 Cu Plated Silicon Wafer 4 DSP P100 500±10 20nmNi+100nmAu 0~0.05 2
M57 Cu Coated Silicon Wafer 4 SSP N100 500±10 Non-polished surface 20nnTi+100nmAu 1~3 2
M58 Silicon Wafer Coated with Gold 4 DSP N100 525±25 20nmTi+100nmAu 0~0.01 2
M59 Silicon Wafer Plated with Gold 4 SSP P100 525±20 Non-polished surface 20nmNi+100nmAu 1-3 2

 

Take the platinum (Pt) coated silicon wafer for example: Since the platinum layer has high hardness, low resistance and good weldability, the conductivity, hardness and corrosion resistance of the platinized silicon wafer are increased, which make it can be used as a conductive substrate.

2. About Platinum Coating on Silicon Wafer

The metal deposition on silicon wafer refers to a metallization process that metallic thin-films deposited on the wafer to form conductive circuit. The metals are commonly gold, platinum, aluminum, copper, silver and so on. Metal alloys also can be used.

Vacuum deposition technology is often used in metallization process. While for the deposition process, sputtering, electron-beam evaporation, flash evaporation and induction evaporation are the usual methods for fabricating platinum film on Si wafer.

Silicon wafer is commonly used to deposit and grow ferroelectric thin film from sputtering sources. The temperature for sintering generally can reach 650~850°C. During the sintering, the stress changes greatly, and the tension or compression will decrease when it reaches gigapascals. After that, the typical stress of ferroelectric thin film is about 10o gigapascal. Pt thin film will appear small cracks when the temperature is over 750°C. Therefore, Pt metal layer in silicon wafer processing should be depositing at the temperature lower than 750°C.

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