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Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range?
Crystal wafer
Epitaxy
Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range?
A: We can offer misorientation in low degree, no problem.
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers?
As to the wafer dicing - is it possible to get a non-rectangular dicing? such as 6mm x 8mm size?
Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing?
We want to know the refractive index of these SiC wafers?
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