Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range?
A: We can offer misorientation in low degree, no problem.
Q: Can you offer some SiC(0001) wafers with low but intentionnal misorientation in the 1° to 2° range?
A: We can offer misorientation in low degree, no problem.
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier [...]
Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
Q:Do you sell SiC wafers that are not (0001) plane? For example, (11-20)? A:We can offer a-plane, but the size would be smaller,and should require quantity, do you have size requirement?
Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.
Q:As to the wafer dicing – is it possible to get a non-rectangular dicing? such as 6mm x 8mm size? A:No problem, any size is workable.
Q:We request for the following items 1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm 2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 [...]