PAM XIAMEN offers Mo-Coated Sodalime Glass Wafer. Here is a wafer list for your reference:
PAM210713-MO
| Item | Length | Width | Thickness | Surface Finished |
| Mo-coating Sodalime Glass Wafer | 100 mm | 100 mm | 1000 nm | Single side polished |
| Mo-coating Sodalime Glass Substrate | 20 mm | 15 mm | 1000 nm | Single side polished |
| Mo-coating Sodalime Glass Sheet | 25 mm | 25 mm | 1000 nm | Single side polished |
| Mo-coated Sodalime Glass Wafer | 100 mm | 100 mm | 1.1 mm | Single side polished |
| Mo-coated Sodalime Glass Film | 20 mm | 15 mm | 0.7 mm | Single side polished |
| Mo-coated Sodalime Glass Thin Film | 25 mm | 25 mm | 0.7 mm | Single side polished |
Moreover, we can offer Mo coated glass (PAMP21228-MO) with larger sizes as follows:
No.1 Molybdenum (Mo) coated glass slides
Dimension: L 200mm x W 200 mm x Thickness 2 mm
Resistivity – around 6-7 ohms/sq.
Glass Thickness – 2 mm
Coating: – One Side
Coating Thickness: 3000 nm
Glass – Soda Lime Glass
No.2 Molybdenum (Mo) coated glass slides
Dimension: L 200mm x W 200 mm x Thickness 0.8 mm
Resistivity – around 6-7 ohms/sq.
Glass Thickness – 0.8 mm
Coating: – One Side
Coating Thickness: 3000 nm
Glass – Soda Lime Glass
Kindly note: the softening point of glass substrate is about 500 degrees.
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.