PAM XIAMEN offers Mo – Molybdenum Substrates (polycrystalline).
General Properties for Molybdenum
Atomic Number 42
Atomic Weight: 95.96 g/mol
Crystal structure: BCC
Lattice constant at room temperature : 0.315 nm
Density: 10.28 g/cm3
Melting Point: 2623 °C
Boiling Point: 4639 °C
Mo Polycrystalline Substrate: 1″x1″ x 0.5 mm, two sides polished
Mo Polycrystalline Substrate: 10 x 10 x 0.5mm, two sides polished
Mo-Mn/Ni on Al2O3 Purity: 96% size: 12.6 x 8 .6x 0.5mm , Coating Mo-Mn: 8um min. Ni :2um Min. size: 11.2×7.2mm
Mo-Mn/Ni on Al2O3 Purity: 96% size: 6.2 x 8 x 0.5mm , Coating Mo-Mn: 8um min. Ni :2um Min. size: 4.7×6.55mm
Mo – Molybdenum Polycrystalline Metallic Foil: 200mm x 100mm x 0.1mm(thickness)
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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.