

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 4″ 525 P/E FZ 4,200-8,000 SEMI TEST (Bad Surface & Chips), Lifetime>1,400μs, in Empak cassettes of 7 & 7 wafers n-type Si:P [100] ±0.2° 4″ 380 ±10 P/E FZ >3,500 SEMI TEST , 1 Flat n-type Si:P [100] 4″ 400 ±10 P/P FZ 3,100-6,800 SEMI Prime, TTV<5μm n-type Si:P [100] 4″ 200 P/P FZ >3,000 SEMI Prime, MCC Lifetime > 1,000μs, n-type Si:P [100] 4″ 400 P/E FZ 2,000-6,500 SEMI Prime, Lifetime>1,000μs n-type Si:P [100] 4″ 915 ±10 E/E FZ 2,000-3,000 1Flat at [100] n-type Si:P [100] 4″ 300 L/L FZ 1,100-1,600 SEMI n-type Si:P [100] ±1° 4″ 200 [...]
Several types of GaN MOSFETs with normally-off operation have been fabricated on insulating substrate and evaluated. In recessed-gate GaN MOSFET, the threshold voltage (Vth) can be easily controlled, but the current drivability is modest and needs to be improved by adopting appropriate device structure [...]
PAM XIAMEN offers black lithium Niobate wafers for Optics and SAW Components 4″ (100mm) LiNbO3 127.860Y-cut Black Wafer for Optics and SAW Components 1. Dimension Diameter/mm 100.0±0.3 Orientation Flat (OF)/mm 32.0±1.0 Second Refer. Flat (RF)/mm 10.0±3.0 Thickness/um 350±20 Edge bevel Edge rounding 2. Specification 2.1 Orientation Surface – cut: 127.860Y-cut±0.30 Orientation Flat (OF) Parallel to +X Plane±0.30 Second Refer. Flat (RF) CCW1350±0.50from OF 2.2 Flatness TTV ≤5um LTV ≤0.5um [...]
PAM XIAMEN offers thinnest Silicon Wafers. We have sold Silicon Wafers with a 2 micron thickness. But our biggest selling thin silicon wafer is: 100mm P(100) 1-10 ohm-cm 50um SSP and DSP TTV <2um Please let us know what specs you would like us to quote? For more information, [...]
Highlights •The validity of comparing DC and RF HTOL test results is a key issue in reliability testing. •We investigate whether DC and RF self heating, and therefore channel temperature, are equivalent. •For this purpose, an experimentally validated electrothermal model has been developed. •Channel temperature is found to [...]
The hexagonal wurtzite GaN nanowires embedded in the nanochannels of anodic alumina membrane were achieved by the direct reaction of Ga vapour with a constant flowing ammonia atmosphere. X-ray diffraction (XRD), scanning electron microscopy and transmission electron microscopy were used to measure the size [...]