

High purity SiC (silicon carbide) substrate, which is for microwave device and graphene epitaxial growth, can be provided by PAM-XIAMEN – a SiC substrate supplier. Among all the usages, epitaxial graphene growth on high-purity semi-insulating silicon carbide substrate is expected to produce high-performance graphene integrated circuits, [...]
Silicon wafers with various metal depositions are for sale in sizes from 2 inch to 12 inch. Metal deposition on silicon wafer is usually processing on the substrate surface, and thickness of the substrate typically is 300um~700um. A wafer list is shown below for [...]
PAM XIAMEN offers NdGaO3 Neodymium Gallate Crystal Substrates. Main Parameters Growth Method orthogonal Unit cell constant a=5.43、b=5.50、c=7.71 Melt point(℃) 1600℃ Density 7.57g/cm3 Dielectric constants 25 Growth method hanging maneuver method Size 10×3, 10×5, 10×10, [...]
We investigated the effect of the thickness of a 3C-SiC buffer layer on the growth of GaN on a Si substrate. GaN samples with thicknesses of 2.0 and 4.5 µm were grown by metal organic vapor phase epitaxy. Islands were observed at the initial [...]
PAM XIAMEN offers Glass Substrates(ITO Coated Glass / Plastic Substrates and ITO/ZnO coated Sodalime Glass). ITO Coated Glass / Plastic Substrates ITO coated(sodalime) glass has highly electrical conductivity yet with excellent transparence. It has been widely used in flat panel display and solar cells. [...]
PAM-XIAMEN offers silicon ingot with FZ Intrinsic undoped, MCC lifetime (Minority Charge Carrier Lifetime) more than 1000Ωcm. Silicon Ingot, FZ intrinsic undoped, MCC lifetime An intrinsic(pure) semiconductor, also called an undoped semiconductor or i-type semiconductor, is a pure semiconductor without any significant dopant species present. The number of [...]