PAM XIAMEN offers 4″CZ Prime Silicon Wafer-7 GG27b Silicon wafers, per SEMI Prime, P/E 4″Ø×500±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, SEMI Flat (one), Sealed in Empak or equivalent cassette, MCC Lifetime>1,000μs. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-25meta-author
The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the annealing temperature is identified to understand the bubble evolution mechanism. The effect of a-Ge layer thickness on the bubble density and size at different annealing [...]
2019-11-13meta-author
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 5000 P/E 3.4-3.7 SEMI Prime, Individual cst n-type Si:P [100] 2″ 40 ±10 P/P 1-3 SEMI Prime, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers n-type Si:P [100] 2″ 1000 P/P 1-10 SEMI Prime n-type Si:Sb [100] 2″ 280 P/E 0.01-0.02 SEMI Prime n-type Si:Sb [100] 2″ 1000 P/E 0.005-0.020 SEMI Prime n-type Si:As [100] 2″ 300 P/P 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 500 P/E 0.001-0.005 SEMI Prime n-type Si:As [100] 2″ 7000 P/E 0.001-0.005 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime, Individual cst n-type Si:P [111] 2″ 10000 P/E 46-52 SEMI Prime, Individual [...]
2019-03-07meta-author
PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow: 1. Specifications of GaAs Epiwafer with AlGaAs Multilayers VCSEL, 980nm, GaAs epiwafer, 4″size PAM210208 Layer No. Material Group Repeat Mole Fraction(x) Strain(ppm) PL(nm) Thickness(nm) Dopant 32 GaAs – – – – – 156 C 31 Al(x)GaAs – – 0.04 – – 50.5 C 30 Al(x)GaAs – – 0.87->0.04 – – 20 C 29 Al(x)GaAs – – 0.87 – – 59.7 C 28 Al(x)GaAs – 16 0.04->0.87 – – 20 C 27 Al(x)GaAs – 0.04 – – 51.5 C 26 Al(x)GaAs – 0.87->0.04 – – 20 C 25 Al(x)GaAs – 0.87 – – 59.7 C 24 Al(x)GaAs – – 0.04->0.87 – – 20 C 23 Al(x)GaAs – – 0.04 – – 32.9 C 22 Al(x)GaAs – – 0.80->0.04 – – 20 C 21 Al(x)GaAs – – 0.98 – – 20 C 20 Al(x)GaAs – – 0.8 – – 61.6 C 19 GaAsP – – – – – – UD 18 In(x)GaAs – – – – 970nm – UD 17 GaAsP – – – – – – UD 16 In(x)GaAs – – – – 970nm – UD 15 GaAsP – – – – – – UD 14 In(x)GaAs – – – – 970nm – UD 13 GaAsP – – – – – – UD 12 Al(x)GaAs – – 0.87 – – 59.7 Si 11 Al(x)GaAs – – 0.04->0.87 – – 20 Si 10 Al(x)GaAs – – 0.04 – – 51.5 Si 9 Al(x)GaAs – – 0.87->0.04 – – 20 Si 8 Al(x)GaAs – 6 0.87 – – 59.7 Si 7 Al(x)GaAs – 0.04->0.87 – – 20 Si 6 Al(x)GaAs – 0.04 – – 51.5 Si 5 Al(x)GaAs – 30 0.92->0.04 – – 20 Si 4 Al(x)GaAs – 0.92 – – 59.8 Si 3 Al(x)GaAs – 0.04->0.92 – – 20 Si 2 Al(x)GaAs – 0.04 – – 51.5 Si 1 GaAs – – – – – 500 Si 4 inch GaAs substrate Si doped; [...]
2021-04-02meta-author
PAM XIAMEN offers WS2 Crystal. WS2 (Tungsten Disulfide) is the first material which was found to form inorganic nanotubes, in 1992. This ability is related to the layered structure of WS2. WS2 nanotubes have been investigated as reinforcing agents to improve the mechanical properties [...]
2019-05-20meta-author
PAM-XIAMEN supplies GaN HEMT epitaxial wafers and GaN fabrication services. Our GaN fabrication services supplied include front-end process and back-end process. More details about GaN fabrication process for HEMTs please see below: 1. OEM Service – Si-based GaN Epitaxial Wafers for Power and RF Electronic [...]
2022-11-23meta-author