PAM XIAMEN offers CaF2.
CaF2, (100), 10x10x 0.5 mm 2 Sides polished
CaF2, (100), 10x10x 0.5 mm 1 Side polished
CaF2, (100), 10x10x 1.0mm , 1 Side polished
CaF2, (100), 10x10x 1.0mm , 2 Side polished
CaF2, (111), 10x10x 0.5mm , 2 Side polished [...]
2019-04-17meta-author
GaN-On-Si Key Patent Analysis
The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]
2012-12-19meta-author
980 Single Mode Laser Chip (PAM200827-LD)
PAM XIAMEN offers 980 Single Mode Laser Chip
Powerwaywafer
980 Single mode laser chip property
Minimum
Typical
Maximum
Central Wavelength 969 974 979 nm
970
980
990
Output Power (mW)
300
400
500
Working Mode CW
—
—
—
Longitudinal mode Single
—
—
—
Spectrum Width
—
—
—
Emitter Width
—
—
—
Cavity Width (μm)
640
650
660
Cavity Length (μm)
4490
4500
4510
Cavity Thickness (μm)
115
125
135
Fast Axis Divergence(FWHM) 30 Deg
—
—
—
Slow Axis Divergence (FWHM) [...]
2020-09-16meta-author
PAM XIAMEN offers SiO2 +Si3N4 on Silicon wafer as follows
No.1: 300 nm SiO2+50nm Si3N4 Films on Si (100), 2″ dia x 0.250 mm t, P type , B-doped,Resistivity:0.01-0.1ohm.cm
Thermal oxide Layer
Research Grade , about 80 % useful area
SiO2(300nm)+50nm Si3N4 layer on 2″ Silicon wafer( Both [...]
2019-04-29meta-author
PAM XIAMEN offers La0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 on Nb:SrTiO3 .
20nmLa0.7Sr0.3MnO3 + 100nmPbZr0.2Ti0.8O3 films on Nb:SrTiO3 Substrate <100> 5x5x0.5 mm, 1sp ,wt 0.7%
Specifications:
Film: La0.7Sr0.3MnO3 (20nm) + PbZr0.2Ti0.8O3 (100nm)
Substrate:Nb: SrTiO3 (100), wt 0.7%
Size: 5x5x0.5mm, one side polished
For more information, please visit our website: https://www.powerwaywafer.com,
send us [...]
2019-04-28meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
2″
279
P/E
FZ >1,000
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[100]
2″
300
P/E
FZ 2,800-3,300
SEMI Prime, TTV<7μm
p-type Si:B
[111] ±0.5°
2″
500
P/P
FZ 5,000-6,500
SEMI Test (in unsealed cassette)
p-type Si:B
[111] ±0.5°
2″
275
P/E
FZ 3,000-5,000
SEMI Prime, Lifetime>2,000μs, in hard cassettes of 5 wafers
p-type Si:B
[111-7° towards[110]] ±0.5°
2″
279
P/P
FZ >2,000
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI, Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI TEST (Scratched), Soft cst
p-type Si:B
[111] ±0.5°
2″
331
P/E
FZ 2,000-5,000
SEMI [...]
2019-03-07meta-author