In order to understand dislocations in GaN grown on silicon using metal organic chemical vapor deposition (MOCVD), two samples with different film thickness were grown. The distribution of dislocations and its influence on epitaxial layer were studied. Wet etching can effectively reveal the dislocations in GaN, [...]
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
20±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
30
n- Si:P
4.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
9.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
12±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
11±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
36
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
41
n- Si:P
25±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42
n- Si:P
20.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42.5
n- Si:P
17±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
52.5
n- Si:P
12.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
56
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
70
n- Si:P
73±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
72
n- Si:P
12.5±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
73
n- Si:P
84±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
13±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
11±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
12±10%
n/n+
3″Øx375μm
n- Si:As[111]
0.001-0.005
P/E
85
n- [...]
2019-03-08meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -5
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-16meta-author
PAM-XIAMEN offers M Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM-XIAMEN can offer SiC substrate and epitaxy wafer for fabricating IGBT devices. The emergence of the third-generation wide-bandgap semiconductor SiC wafer has shown stronger competitiveness in the fields of high voltage, high temperature, and high power. The n-IGBT (insulated gate bipolar transistor) is further [...]
2022-04-14meta-author
PAM XIAMEN offers Aluminum Oxide Substrate Al2O3.
Aluminum Oxide Ceramic Substrates Porperties
Purity (wt%)
0.96
0.996
0.996
0.999
Density (g/cm3)
> 3.75
3.88
3.87
3.92
Thermal conductivity (W/m. K)
24
34.7
35
35
Thermal Expansion (x10-6/oC)
< 7.7
7~8.3
7~8.3
8.1
Dielectric Strength (Kv/mm)
> 14
23.64
23.64
8.7
Dielectric Constant (at 1MHZ)
9.8
9.9
9.9
9.8
Loss Tangent (x10-4 @1MHZ)
4
1
1
< 1
Volume Resistivity (ohm-m)
> 1013 at [...]
2019-04-18meta-author