The hexagonal wurtzite GaN nanowires embedded in the nanochannels of anodic alumina membrane were achieved by the direct reaction of Ga vapour with a constant flowing ammonia atmosphere. X-ray diffraction (XRD), scanning electron microscopy and transmission electron microscopy were used to measure the size and structures of the samples. The Raman scattering spectrum of ordered GaN nanowires was studied. The Raman spectrum of the GaN nanowire arrays is consistent with the hexagonal wurtzite structure GaN, in agreement with XRD observation. The E2(high), E1(TO), and A1(TO) phonon frequencies at 563, 553, and 529 cm-1 show the low-energy shifts, respectively. The shifts and band broadening of the Raman modes result from the nanosize effect.
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