PAM-XIAMEN can offer AlGaAs / GaAs p-HEMT (pseudomorphic high electron mobility transistor) heterostructure epitaxial wafer grown by MBE or MOCVD process. The heterostructure has a high-mobility conduction channel formed by two-dimensional electron gas, which is an ideal material for wireless applications. The line width [...]
2021-12-07meta-author
PAM-XIAMEN offers diamond on silicon wafer. Since diamond has a wide band gap, diamond thin films on silicon wafer, which is diamond epitaxial growth on silicon by MPCVD, is applied to wide band gap semiconductors, such as gas sensor devices, temperature sensor devices, radiation/infrared [...]
2019-04-19meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN and other related products and services announced the new availability of size 2” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.
Dr. Shaka, said, “We are pleased to [...]
2017-11-15meta-author
PAM-XIAMEN offers A Plane N-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
-10 µm ≤ BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-17meta-author
PAM XIAMEN offers LaSrAlO4 Strontium Lanthanum Aluminate Crystal Substrates.
Main Parameters
Crystal structure
M4
Growth method
Czochralski method
Unit cell constant
a=3.756Å c=12.63 Å
Melt point(℃)
1650
Density
5.92(g/cm3)
Hardness
6-6.5(mohs)
Dielectric constants
ε=16.8
Size
10×3,10×5,10×10,15×15,20×15,20×20
Ф15, [...]
2019-03-14meta-author
PAM-XIAMEN offers M Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN M-U
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at [email protected] and [email protected]
2020-08-17meta-author