PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:Sb
[211] ±0.5°
4″
1,500 ±15
P/P
0.01-0.02
SEMI Prime, TTV<1μm
n-type Si:Sb
[211] ±0.5°
4″
1600
C/C
0.01-0.02
SEMI Test, Wafers can be polished for additional fee
n-type Si:P
[111]
4″
1200
P/P
35-85
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
1500
P/E
>20 {24-29}
SEMI Prime, TTV<5μm, in Empak cassettes of 2 wafers
n-type Si:P
[111] ±0.5°
4″
250
P/E
18-25
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
500
P/P
11-15
SEMI Prime, Both-sides Epi Ready polished
n-type Si:P
[111]
4″
280
P/E
1.3-2.7
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
280
P/E
1.3-2.7
SEMI Prime
n-type [...]
2019-03-05meta-author
Effect of annealing on the residual stress and strain distribution in CdZnTe wafers
The effect of annealing on residual stress and strain distribution in CdZnTe wafers was studied based using an X-ray diffraction (XRD) method. The results proved the effectiveness of annealing on the reduction [...]
PAM-XIAMEN offers R-Plane(1-102) Sapphire Substrate, single side polished,please see below spec:
2”,R-Plane Sapphire Substrate with SSP
No
Item
Specification
1
Material
High Purity Al2O3
2
Diameter
50.8土0.1mm
3
Orientation
R-plane<1-102>土0.2°
4
Thickness
430土15um
5
TTV
≤15um
6
Bow
≤10um
7
Warp
≤15um
8
Primary Flat Length
16.0土1.0mm
9
Front suface Roughmess(Ra)
Ra≤0.3nm
10
Bock Surtace Roughness(Ra)
0.8~1.2um
11
Primary Flat Orienation
A-plane+0.2°
12
Surtace onentation
R-Plane土0.2°
13
Laser Mark
back side or front side or no laser mark
14
Package
25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom
3”,R-Plane Sapphire Substrate with SSP
No
ltem
Specification
1
Material
High Purity Al2O3
2
Diameter
76.2土0.2mm
3
Thickness
350土25um
4
Orientation
R-plane<1-102>土0.2°
5
Primary Flat Orientation
45+2CCCW [...]
2020-05-21meta-author
Distribution of defects and impurities in gallium arsenide wafers after surface gettering
Gettering of defects and impurities in GaAs using a heat treatment (HT) of the yttrium-coated wafers has been investigated. The gettering has been established to be of a volume character. That has allows [...]
Graphene and carbon nanotube (CNT) structures have promise for many electronic device applications and both have been grown on SiC through the decomposition of the substrate. It is well known that both graphene and aligned CNTs are grown under similar conditions with overlapping temperature [...]
2019-12-16meta-author
With the increasing development of semiconductor devices, silicon and silicon-based materials still show their superior properties, and it will still be an important material for semiconductor devices and integrated circuits. With the decreasing size of devices, the resistivity, impurity distribution, film thickness and quality [...]
2022-08-30meta-author