Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining
This paper investigates the slicing of germanium wafers from single crystal, gallium-doped ingots using wire electrical discharge machining. Wafers with a thickness of 350 μm and a diameter of 66 mm were cut [...]
PAM XIAMEN offers Ce:Lu2SiO5 substrate.
Ce:Lu2SiO5 substrate (001 ) 10x10x0.5 mm, 1sp
Substrate Specifications
Crystal: Ce: Lu2SiO5
Ce dopant 0.175 mol %
Size: 10x10x0.5 mm
Orientation: (001 ) +/-0.5 0
Polish: One side optical polished.
Ce:Lu2SiO5 substrate (001) 10x10x0.5 mm, 2sp [...]
2019-05-08meta-author
Highlights
•Novel growth strategy of GaAs on Si(1 0 0) with AlAs/GaAs strain layer superlattice.
•Emphasis on understanding the inconclusive crystalline morphology at initial layers.
•Observed low TD in HRTEM and low RMS in AFM.
•Observed fourth order of superlattice peaks in ω–2θ scan in HRXRD.
•SAEDP shows fcc [...]
Targeted Stress LPCVD Nitride
PAM XIAMEN offers Targeted Stress LPCVD Nitride
Targetted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications.
Please provid us with your application for an immediate quote.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-02-12meta-author
PAM XIAMEN offers ZnO/Pt/Ti coated Si wafer.
ZnO/Pt/Ti coated Si wafer ,4″x0.525mm,1sp P-type B-doped,( ZnO=150nm ,Pt=150nm Ti=20-40nm)
Silicon Wafer Specifications:
Film: ZnO/Pt/Ti thin film on Si (100) (P-type) substrate ,4″x0.525mm,1sp
ZnO=150nm, ZnO film: c-axis, medium (001) orientation
Pt/Ti film: [...]
2019-04-29meta-author
Gallium Nitride Is Non-Toxic, Biocompatible; Holds Promise for Implants, Research Finds
Gallium Nitride(GaN) is currently used in a host of technologies, from LED lighting to optic sensors, but it is not in widespread use in biomedical implants. However, the new findings from NC State and [...]
2012-06-20meta-author