2″ Silicon Wafer-7

2″ Silicon Wafer-7

PAM XIAMEN offers 2″ Silicon Wafer.

Material Orient. Diam. Thck
(μm)		 Surf. Resistivity
Ωcm		 Comment
n-type Si:P [100] 2″ 280 P/P 1-5 SEMI Prime,
Si:P [100-6°] 2″ 300 P/E 1-5 SEMI Prime,
n-type Si:P [100] 2″ 350 P/P 1-50 Test, Polished but dirty and scratched. Can be re-polished for additional fee, NO Flats
n-type Si:P [100] ±1° 2″ 400 ±15 P/P 1-10 SEMI Prime, TTV<3μm, Empak cst
n-type Si:P [100] 2″ 3175 P/E 1-3 Prime, NO Flats, Individual cst
n-type Si:P [100] ±1.0° 2″ 6000 P/E 1-10 SEMI Prime, , Individual cst
n-type Si:P [100] 2″ 300 P/P 0.8-1.0 SEMI Prime,
n-type Si:Sb [100] 2″ 300 P/E 0.01-0.02 SEMI Prime,
n-type Si:Sb [100] 2″ 500 P/P 0.01-0.02 SEMI Prime, , in hard cassettes of 5 wafers
n-type Si:As [100] 2″ 7050 P/E 0.0031-0.0038 SEMI Prime, , Individual cst Group of 2 wafers
n-type Si:As [100] 2″ 300 P/P 0.001-0.005 SEMI Prime,
n-type Si:As [100] 2″ 300 P/E 0.001-0.005 SEMI Prime,
n-type Si:As [100] 2″ 380 P/E 0.001-0.005 SEMI Prime, , TTV<5μm
n-type Si:As [100] 2″ 420 ±15 P/P 0.001-0.005 {0.0030-0.0034} SEMI Prime, , in Empak Cassettes of 3 & 5 wafers
n-type Si:P [111] 2″ 400 L/L 120-170 Lapped & edged
n-type Si:P [111] ±0.5° 2″ 5000 P/E >20 Prime, NO Flats, Individual cst, Group of 2 wafers
n-type Si:P [111] 2″ 5000 P/E 15-20 SEMI Prime, Individual cst, (group of 6 wafers)
n-type Si:P [111] 2″ 300 P/E 10-25 SEMI Prime,
n-type Si:P [111] ±0.5° 2″ 500 P/E 10-12 SEMI Prime,
n-type Si:P [111-3°] ±0.5° 2″ 600 P/E ~10 SEMI Prime, TTV<3μm, hard cst
n-type Si:P [111] ±0.5° 2″ 500 P/P 2.8-10.0 SEMI Prime

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

2019-03-07

Share this post

Related Posts

Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches

Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches GaAs was grown directly on silicon by molecular beam epitaxy (MBE) at low substrate temperature(∼250°C). Both the silicon wafer cleaning and the GaAs film growth processes were done attemperatures lower than the Si-Al eutectic temperature to enable monolithic integration of low-temperature-GaAs photoconductive switches with finished Si-CMOS circuits. The film surfaces show less [...]

2014-04-28meta-author
YSZ crystal-1

PAM XIAMEN offers YSZ （Y2O3 stabilized ZrO2）single crystal wafer. YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter. YSZ Substrates (100) 1、Square YSZ (100) [...]

2019-05-21meta-author
3C SiC Wafer

Compared to 4H-SiC, although the bandgap of 3C silicon carbide (3C SiC) is lower, its carrier mobility, thermal conductivity, and mechanical properties are better than those of 4H-SiC. Moreover, the defect density at the interface between the insulating oxide gate and 3C-SiC is lower, which is [...]

2023-12-08meta-author
Ultra-Thinned Silicon Wafers

PAM XIAMEN offers Thinned Silicon Wafers! We have them! In Stock and ready to ship! Free Standing Thin Silicon Wafers We offer freestanding super thin silicon wafers with thicknesses ranging from 5µm to 100µm and with diameters from 5mm to 6. The thin Silicon wafers are true mirror [...]

2019-02-14meta-author
What is Ion Implantation Process of Silicon Wafer?

Semiconductor doping is a key process step in the production of integrated circuits. In the semiconductor production process, crystalline silicon is used as the substrate material of the wafer, and its electrical conductivity is very poor. Silicon becomes a useful semiconductor only when small [...]

2022-05-27meta-author
3″ Si wafer Thickness: 380±20μm

PAM XIAMEN offers 3″ Si wafer Thickness: 380±20μm. 3″ Si wafer with Thermal Oxide of thickness 1000A Diameter: 3″ Diameter: 76.2±0.3mm Thickness: 380±20μm Orientation: <100>±1° Type/dopant: N type/Phosphorus Resistivity: 1-20Ωcm Polishing: SSP Primary Flat 22.5±2.5mm, （110）±1° Surface roughness: <5A For more information, please visit [...]

2019-08-22meta-author