PAM-XIAMEN offers (20-2-1) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-2-1)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email [...]
2020-09-02meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
3″
325
P/E
FZ 100-200
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
FZ 7,000-10,000
SEMI Prime
p-type Si:B
[100]
3″
350
P/P
FZ 1-5
SEMI Prime
p-type Si:B
[100]
3″
160 ±10
P/P
FZ 0.5-10.0
SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee
p-type Si:B
[100]
3″
890 ±13
P/P
FZ 0.5-10.0
SEMIt, TTV<8μm
p-type Si:B
[111] ±0.5°
3″
380
P/E
FZ 8,000-10,000
SEMI TEST (has scratches), in hard cst
p-type Si:B
[111] ±0.5°
3″
475
P/E
FZ >4,400
SEMI Prime, TTV<5μm
p-type Si:B
[111] ±0.25°
3″
400
P/E
FZ >100
SEMI Prime
n-type Si:P
[100]
3″
380
P/P
FZ 7,000-18,000
SEMI Prime
n-type [...]
2019-03-06meta-author
PAM XIAMEN offers Mo-Coated Sodalime Glass Wafer. Here is a wafer list for your reference:
PAM210713-MO
Item
Length
Width
Thickness
Surface Finished
Mo-coating Sodalime Glass Wafer
100 mm
100 mm
1000 nm
Single side polished
Mo-coating Sodalime Glass Substrate
20 mm
15 mm
1000 nm
Single side polished
Mo-coating Sodalime Glass Sheet
25 mm
25 mm
1000 nm
Single side polished
Mo-coated Sodalime Glass Wafer
100 mm
100 [...]
2019-04-28meta-author
White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates
We demonstrated an InGaN/GaN-based, monolithic, white light-emitting diode (LED) without phosphors by using morphology-controlled active layers formed on multi-facet GaN templates containing polar and semipolar surfaces. The nanostructured surface morphology was controlled by [...]
2018-07-12meta-author
N-Type Silicon Substrates
PAM XIAMEN offers n-type silicon wafers in stock.
N-type Silicon
50.8mm N-type Arsenic Doped (100) 0.001-0.005 ohm-cm 280um SSP In stock
76.2mm N-type Phosphorous Doped (100) 1-10 ohm-cm 380um SSP In stock
100mm N-type Phosphorus Doped (100) 10-20 ohm-cm 280um DSP In stock
150mm N-type Antimony Doped [...]
2019-02-14meta-author
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer.
4”FZ P-type
orientation 111
thickness 400±15
Resistivity 15000Ωcm
polished side 1
Acid etched side 2
life time 1000
SEMI STD
DISLOCATION DENSITY 500 max/ cm2
TTV/TAPER 12μm max
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-06-24meta-author