Study of Highly Pixelated CdZnTe Detector for PET Applications
We are investigating the feasibility of a high-resolution PET insert device based on a Cadmium Zinc Telluride (CdZnTe) detector with 350 μm anode pixel pitch to be integrated into a conventional animal PET scanner to improve its [...]
Polarization degree and vector angle effects on a CdZnTe focal plane performance
To date in astrophysics, X- and gamma-ray source emissions have been studied almost exclusively through spectral and timing variability analysis. However, this analysis often allows two or more distinct models capable of explaining [...]
The application fields of SiC wafers and GaN wafers are mainly divided into electronic power field, radio frequency field, optoelectronic field, and other fields. Among them, electronic power field and radio frequency field are the most important applications, and the advantages of using SiC material are obvious. These two areas have [...]
2021-04-20meta-author
PAM-XIAMEN can offer 2” InGaN/GaN quantum well blue laser diode wafer on sapphire or silicon substrate as follows. The blue GaN LD wafer for commercial applications illustrates the great potential of III-V epitaxial wafers.
1. Specification of 440-460nm Blue GaN LD wafer
PAM190909-GAN-LD
Item
Descriptions
Materials
Substrate
blue laser
440-460nm
InGaN
2 inch Sapphire substrate***
GaN Blue LD EPI Wafer Spec
Spec
LD Epitaxial Wafer Size
Growth
MOCVD
Diameter
50.8 ± 0.2 [...]
2018-08-22meta-author
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
12.5±2.5
p- Si:B
2.35
n/p/p+
3″Øx381μm
p- Si:B[111]
0.004-0.008
P/E
140±10
n- Si:P
33.6
n/p/p+
3″Øx381μm
n- Si:As[111-4°]
0.001-0.005
P/E
5.5
n- Si:P
0.31 – 0.33
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
37.5
n- Si:P
0.6±10%
n/n+
3″Øx525μm
n- Si:P[111]
0.001-0.005
P/E
4.5
n- Si:P
1.1 – 1.4
n/n+, Sealed in cassettes of 24 wafers
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
5.5
n- Si:P
1.06±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
11
n- Si:P
17.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.7±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
2.1±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.8±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
1.3±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
12
n- Si:P
16±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
13
n- Si:P
1.35±10%
n/n+
3″Øx381μm
n- [...]
2019-03-08meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1500
P/E
5-7
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-5
SEMI Prime
n-type Si:P
[100]
3″
350
P/P
1-25
SEMI Prime, TTV<1μm, Empak cst
n-type Si:P
[100] ±1°
3″
500
P/P
1-100
SEMI Prime, TTV<2μm, Empak cst
n-type Si:P
[100-4°] ±0.5°
3″
500
P/E
1-20
Prime
n-type Si:P
[100]
3″
650
P/P
1-10
Prime, TTV<2μm
n-type Si:P
[100]
3″
1000
P/P
1-5
SEMI Prime, hard cst
n-type Si:P
[100]
3″
1000
P/E
1-20
SEMI Prime
n-type Si:P
[100]
3″
6000
P/E
1-20
SEMI Prime, Individual cst
n-type Si:Sb
[100]
3″
300
P/E
0.02-0.04
SEMI Prime, in hard cassettes of 2 wafers
n-type Si:Sb
[100]
3″
381
P/E
0.008-0.020
SEMI Prime
n-type Si:As
[100]
3″
380
P/EOx
0.001-0.005
SEMI Prime, LTO Back-side seal [...]
2019-03-06meta-author