A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity [...]
2020-02-18meta-author
PAM XIAMEN offers InSb Wafer.
InSb Ge-doped
InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished
InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1
InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]
2019-05-07meta-author
Figure 1: Cross-sectional diagram of the GaN-HEMT device
Fujitsu today announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions.
This can be used in a high-capacity wireless network with coverage over a radius of several [...]
2017-12-04meta-author
PAM-XIAMEN provides GaAs epiwafer for MESFET devices, which is one FET epitaxial structure with modulated doping. Detailed epitaxial growth heterostructure is listed below for your reference. The electron migration rate of GaAs is 5.7 times higher than that of silicon, which is very suitable [...]
2022-12-09meta-author
Rectifier is a controllable rectifier device based on controllable silicon (thyristor) and centered on intelligent digital control circuits, which converts AC to DC. It is abbreviated as silicon rectifier, also known as thyristor rectifier, thyristor rectifier, etc. Silicon rectifier advantages include high efficiency, no mechanical noise and wear, [...]
2023-10-10meta-author
AlN (aluminum nitride) is a covalent bond compound with a hexagonal wurtzite structure. Usually gray or grayish white in color, it has advantages such as high thermal conductivity, high-temperature insulation, good dielectric properties, high material strength at high temperatures, and low coefficient of thermal [...]
2024-03-13meta-author