Static induction transistor (SIT) is a type of junction field-effect transistor. It is a unipolar voltage control device developed on the basis of ordinary junction field-effect transistors, with three electrodes: active, gate, and drain. Its source drain current is controlled by an external vertical electric [...]
2024-01-15meta-author
M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy
M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms [...]
2013-04-12meta-author
PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide
2″ Monocrystalline silicon wafers with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 μm,
Warping <35 μm
P type
Orientation <100>
The thickness of the insulating oxide layer is 300 nm
Resistance of the base plate ≥ 10 [...]
2020-04-15meta-author
With the development of cloud computing, mobility, Internet of Things, machine learning, etc., the demand for big data storage and computing processing has also increased significantly. More data processing means more energy consumption, leading to the construction of additional data centers and supporting infrastructure. [...]
2022-07-18meta-author
PAM-XIAMEN can offer 2&3 inches P-type GaAs substrates. Gallium arsenide (GaAs) is a III-V type direct band gap semiconductor with a zinc blend crystal structure, and GaAs p-type dopant is commonly used as a substrate for epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium [...]
2021-04-15meta-author
PAM XIAMEN offers KH2PO4 crystal.
KH2PO4 (100), 10x10x 1.0 mm 1 Side polished
Crystal: Monopotassium Phosphate
Orientation: <100>
Size: 10 x 10 x 0.9 mm
Polished: one side polished
Package: 1000 class clean plastic bag sealed
Applications: Monopotassium Phosphate crystal [...]
2019-05-07meta-author