The process of silicon carbide oxidation is simple. The silicon carbide substrate can be directly thermally oxidized to obtain SiO2 on the substrate. Silicon carbide is the only compound semiconductor that can obtain high-quality SiO2 through silicon carbide thermal oxidation. The theoretical formula is as follows:
SiC+1.5O2→SiO2+CO
That is, to grow 100nm [...]
2021-04-26meta-author
PAM XIAMEN offers Fe3O4 natural source crystal .
Fe3O4 natural source crystal with defects (001) 5x5x0.5 mm, 2SP
Specifications:
Crystal: Fe3O4 natural source with defects
Purity : [...]
2019-04-19meta-author
PAM XIAMEN offers Si+SiO2+Ti(TiO2)+Pt (Poly or single crystalline)Thin Film, specifications are as follows:
1. Specifications of Coated Silicon Wafer
Si+SiO2 +Ti( or TiO2)+Pt (111) Highly Oriented Polycrystal
SiO2+Ti+Pt (111) thin film on Si substrate, 5x5x0.525mm, 1sp, P-type, B-doped, (SiO2=300nm, Ti=10nm, Pt(111)=150nm)
SiO2+Ti+Pt(111) thin film on Si substrate [...]
2019-04-29meta-author
PAM XIAMEN offers Middium and Small Size Photomask.
Chromium Plate Accuracy (Standard Size:6inch Quartz)
Accuracy/Grade
Max Accuracy
High-precision
Medium accuracy
General accuracy
Min.Line/Space Width
0.75μm/0.75μm
3μm/3μm
5μm/5μm
10μm/10μm
CD Control
±0.1μm
±0.3μm
±0.5μm
±1.0μm
Total Pitch Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Registration Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Overlay Accuracy
±0.25μm
±0.5μm
±0.75μm
±1.0μm
Orthogonality
±0.5μrad
±0.75μrad
±1.0μrad
±2.0μrad
Chrome Plate Material (Photomask Blank Plate)
Material
Soda Lime Glass、Quartz
Max. Size
3006,4009,5009,6012,6025,7012,9012,12″x12″,14″x14″
Normal Size
1.5±0.2mm,2.3±0.2mm ,3.0±0.2mm ,4.8±0.2mm
Thickness
6.35±0.2mm (QZ)
Film Type
Low Reflectance Chrome
Optical Density(λ=450nm)
Between Plates3.0±0.3 In Plate±0.3
Reflectivity(λ=436nm)
Between Plates10±5% In Plate±2%
Main application areas:
1. IC Bumping, [...]
2019-07-04meta-author
PAM-XIAMEN can offered SiC wafers, specific specifications and parameters can be found in: https://www.powerwaywafer.com/sic-wafer
4H-SiC single crystal has excellent characteristics such as wide bandgap, high carrier mobility, high thermal conductivity, and good stability. It has broad application prospects in high-power electronics, radio frequency/microwave electronics, and quantum information. [...]
2024-03-15meta-author
Study on the mechanism of using IR illumination to improve the carrier transport performance of CdZnTe detector
Different wavelength IR light (770–1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (μτ*) [...]
2013-09-27meta-author