The Japanese component manufacturing company Namiki recently announced several technological advancements and equipment upgrade for advanced industrial component production. Namiki successfully produced unprecedented large sized diamond substrates and realized the bonding of two different materials under room temperatures; moreover, the corporation reinvented its cleaning [...]
2017-08-01meta-author
PAM-XIAMEN offers A Plane N-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
-10 µm ≤ BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM-XIAMEN can supply SiC substrates with various specifications, please get more info from: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html
1. Significance of Research on Correlation Between Defect Rate and Mechanical Strength
It is well known that SiC defects have great negative impact to the electrical reliability and performance of chips; Their [...]
2024-04-01meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
280
P/P
1-5
SEMI Prime,
Si:P
[100-6°]
2″
300
P/E
1-5
SEMI Prime,
n-type Si:P
[100]
2″
350
P/P
1-50
Test, Polished but dirty and scratched. Can be re-polished for additional fee, NO Flats
n-type Si:P
[100] ±1°
2″
400 ±15
P/P
1-10
SEMI Prime, TTV<3μm, Empak cst
n-type Si:P
[100]
2″
3175
P/E
1-3
Prime, NO Flats, Individual cst
n-type Si:P
[100] ±1.0°
2″
6000
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
300
P/P
0.8-1.0
SEMI Prime,
n-type Si:Sb
[100]
2″
300
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[100]
2″
500
P/P
0.01-0.02
SEMI Prime, , in [...]
2019-03-07meta-author
Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. [...]
2024-04-09meta-author
GaN-on-Si blue/white LEDs: epitaxy, chip, and package
The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet [...]
2018-04-13meta-author