PAM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec:
1. Specifications of C-Plane Sapphire Substrate
Substrat SSP Sapphire 2-C:
Tiada | Perkara | Spesifikasi |
1 | Bahan | Kemurnian TinggiAl2O3 |
2 | diameter | 50.8 + 0.1mm |
3 | ketebalan | 430 土 15 pagi |
4 | TTV | ≤10μm |
5 | LTV | ≤1.5μm |
6 | Bow | -10 ~ 0μm |
7 | Warp | ≤10μm |
8 | Negara Flat utama | 16.0 土 1.0mm |
9 | Kekasaran Permukaan Depan (Ra) | | Ra≤0.2nm |
Kekasaran Permukaan Belakang (Ra) | 0.7 ~ 1.2μm | |
11 | Orientation Flat utama | Pesawat A 土 0.2 ° |
12 | Orientasi permukaan | Pesawat C (0001) mati Sudut 0.2o+0.1 ″ (Paksi-M); 0 ° + 0.1 ″ (Paksi-A) |
13 | laser Mark | bahagian belakang atau bahagian depan |
14 | Pakej | 25pcs / Kaset, Bertutup vakum, Nitrogen- diisi, Bilik Bersih Kelas-100 |
Catatan: Pesawat C 0 / 0.1 / 0.3 / 0.5 darjah. ke satah M, +/- 0.1 deg. ke pesawat A semua tersedia.
Substrat SSP Sapphire 3-C: PAM200221-SAPPHIRE
Tiada | Perkara | spesifikasi |
1 | Bahan | Kemurnian Tinggi Al2O3 |
2 | diameter | 76.2 土 0.4mm |
3 | Orientasi permukaan | Pesawat C (0001) mati Sudut 0,2 ° + 0,1 * (Paksi-M); 0 * + 0,1 * (Paksi-A) |
4 | Orientasi Flat Primany | Pesawat A 土 0.5 ° |
5 | Negara Flat utama | 220 土 1.0mm |
6 | ketebalan | 500 土 25μm |
7 | TTV | ≤10μm |
8 | Bow | -10 ~ 0um |
9 | meledingkan | ≤15μm |
10 | Kekasaran Permukaan Depan (Ra) | Ra≤0.3nm |
11 | Kekasaran Permukaan Belakang (Ra) | 0.7 ~ 1.2um |
12 | laser Mark | Bahagian Belakang atau Depan (Bahagian Belakang Disukai) |
13 | Pakej | 25pcs / Kaset, Bertutup vakum, Nitrogen- diisi, Bilik Bersih Class100 |
Substrat DSP 4-pesawat DSP Sapphire: PAM20-02-SAPPHIRE
Tiada | Perkara | Spesifikasi |
1 | Bahan | Kemurnian Tinggi Al2O3 |
2 | diameter | 100.0 土 0.2mm |
3 | ketebalan | 650 土 20μm |
4 | Permukaan Permukaan | Pesawat C (0001) off Angle0.2 * + 0.1 * (Paksi-M); O * tO.1 ″ (Paksi-A) |
5 | Orientation Flat utama | Pesawat A 士 0.2 ° |
6 | Negara Flat utama | 30.0 土 1.0mm |
7 | TTV | ≤10um |
8 | LTV | ≤1.5μm (5mm * 5mm) |
9 | Bow | -15 ~ 0μm |
10 | Warp | ≤30μm |
11 | Kekasaran Permukaan Depan (Ra) | Ra≤0.3nm |
12 | Kekasaran Permukaan Belakang (Ra) | Ra≤0.3nm |
14 | LaserMark | Bahagian Belakang atau Depan (Bahagian Belakang Diutamakan) |
15 | Pakej | 25pcs / Kaset, Bertutup vakum, Nitrogen- | Bersih, Bilik Bersih Kelas-100 |
2. Sapphire Wafer Applications
Because of its unique characteristics of high sound speed, high temperature resistance, high transparency and etc., sapphire wafers can be widely used. The customers bought them for some applications:
1) LED Fabrication: Sapphire substrate is widely used in growing GaN thin films to fabricate the LEDs since it can withstand the high temperature during epitaxial growth.
2) RF and Microwave Integrated Circuits: Low dielectric loss of sapphire makes it ideal for RF and microwave ICs, and high frequency devices, such as resonator and filter.
3) Optoelectronics: The properties of optical transparency and hardness make sapphire wafer is able to produce lenses, windows, and other optical components.
4) High Temperature Electronics: Sapphire wafers of high melting point and ability to withstand harsh environments can be used for fabricating electronics, which operate under harsh conditions.
5) Biomedical Usage: Due to its chemical inertness, bio-compatibility and radio-resistance, sapphire is ideal for biomedical usages, like surgical tools, medical implants.
6) R&D: Researchers and companies also buy sapphire substrates for research and development to developing new materials and technologies.
7) Silicon-On-Sapphire Circuits: The sapphire substrates can be used to grow silicon thin film, that is silicon-on-sapphire technology. In this technology, sapphire substrate plays as an insulator, reducing parasitic capacitance, and is widely used in producing faster and more efficient integrated circuits.
Untuk maklumat lebih lanjut, sila hubungi kami melalui e-mel di victorchan@powerwaywafer.com dan powerwaymaterial@gmail.com.