Substrat Nilam C-Plane

Substrat Nilam C-Plane

PAM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec:

1. Specifications of C-Plane Sapphire Substrate

Substrat SSP Sapphire 2-C:

Tiada Perkara Spesifikasi
1 Bahan Kemurnian TinggiAl2O3
2 diameter 50.8 + 0.1mm
3 ketebalan 430 土 15 pagi
4 TTV ≤10μm
5 LTV ≤1.5μm
6 Bow -10 ~ 0μm
7 Warp ≤10μm
8 Negara Flat utama 16.0 土 1.0mm
9 Kekasaran Permukaan Depan (Ra) | Ra≤0.2nm
  Kekasaran Permukaan Belakang (Ra) 0.7 ~ 1.2μm
11 Orientation Flat utama Pesawat A 土 0.2 °
12 Orientasi permukaan Pesawat C (0001)
mati Sudut 0.2
o+0.1 ″ (Paksi-M); 0 ° + 0.1 ″ (Paksi-A)
13 laser Mark bahagian belakang atau bahagian depan
14 Pakej 25pcs / Kaset, Bertutup vakum, Nitrogen-
diisi, Bilik Bersih Kelas-100

Catatan: Pesawat C 0 / 0.1 / 0.3 / 0.5 darjah. ke satah M, +/- 0.1 deg. ke pesawat A semua tersedia.

 

Substrat SSP Sapphire 3-C: PAM200221-SAPPHIRE

Tiada Perkara spesifikasi
1 Bahan Kemurnian Tinggi Al2O3
2 diameter 76.2 土 0.4mm
3 Orientasi permukaan Pesawat C (0001)
mati Sudut 0,2 ° + 0,1 * (Paksi-M); 0 * + 0,1 * (Paksi-A)
4 Orientasi Flat Primany Pesawat A 土 0.5 °
5 Negara Flat utama 220 土 1.0mm
6 ketebalan 500 土 25μm
7 TTV ≤10μm
8 Bow -10 ~ 0um
9 meledingkan ≤15μm
10 Kekasaran Permukaan Depan (Ra) Ra≤0.3nm
11 Kekasaran Permukaan Belakang (Ra) 0.7 ~ 1.2um
12 laser Mark Bahagian Belakang atau Depan (Bahagian Belakang Disukai)
13 Pakej 25pcs / Kaset, Bertutup vakum, Nitrogen-
diisi, Bilik Bersih Class100

 

Substrat DSP 4-pesawat DSP Sapphire: PAM20-02-SAPPHIRE

Tiada Perkara Spesifikasi
1 Bahan Kemurnian Tinggi Al2O3
2 diameter 100.0 土 0.2mm
3 ketebalan 650 土 20μm
4 Permukaan Permukaan Pesawat C (0001)
off Angle0.2 * + 0.1 * (Paksi-M); O * tO.1 ″ (Paksi-A)
5 Orientation Flat utama Pesawat A 士 0.2 °
6 Negara Flat utama 30.0 土 1.0mm
7 TTV ≤10um
8 LTV ≤1.5μm (5mm * 5mm)
9 Bow -15 ~ 0μm
10 Warp ≤30μm
11 Kekasaran Permukaan Depan (Ra) Ra≤0.3nm
12 Kekasaran Permukaan Belakang (Ra) Ra≤0.3nm
14 LaserMark Bahagian Belakang atau Depan (Bahagian Belakang Diutamakan)
15 Pakej 25pcs / Kaset, Bertutup vakum, Nitrogen-
| Bersih, Bilik Bersih Kelas-100

 

Substrat Nilam C-Plane

Substrat Nilam C-Plane

 

 

 

 

 

 

 

 

 

2. Sapphire Wafer Applications

Because of its unique characteristics of high sound speed, high temperature resistance, high transparency and etc., sapphire wafers can be widely used. The customers bought them for some applications:

1) LED Fabrication: Sapphire substrate is widely used in growing GaN thin films to fabricate the LEDs since it can withstand the high temperature during epitaxial growth.

2) RF and Microwave Integrated Circuits: Low dielectric loss of sapphire makes it ideal for RF and microwave ICs, and high frequency devices, such as resonator and filter.

3) Optoelectronics: The properties of optical transparency and hardness make sapphire wafer is able to produce lenses, windows, and other optical components.

4) High Temperature Electronics: Sapphire wafers of high melting point and ability to withstand harsh environments can be used for fabricating electronics, which operate under harsh conditions.

5) Biomedical Usage: Due to its chemical inertness, bio-compatibility and radio-resistance, sapphire is ideal for biomedical usages, like surgical tools, medical implants.

6) R&D: Researchers and companies also buy sapphire substrates for research and development to developing new materials and technologies.

7) Silicon-On-Sapphire Circuits: The sapphire substrates can be used to grow silicon thin film, that is silicon-on-sapphire technology. In this technology, sapphire substrate plays as an insulator, reducing parasitic capacitance, and is widely used in producing faster and more efficient integrated circuits.

Untuk maklumat lebih lanjut, sila hubungi kami melalui e-mel di victorchan@powerwaywafer.com dan powerwaymaterial@gmail.com.

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