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Reliability analysis of InGaN Blu-Ray laser diode

Reliability analysis of InGaN Blu-Ray laser diode The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while slope efficiency is almost not [...]

2014-03-03 Read more...

Formation of InAs quantum dots on low-temperature GaAs epi-layer

Formation of InAs quantum dots on low-temperature GaAs epi-layer InAs self-organized quantum dots (QDs) grown on annealed low-temperature GaAs (LT-GaAs) epi-layers and on normal temperature GaAs buffer layers have been compared by transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM evidences that self-organized QDs were formed with a smaller [...]

2014-02-28 Read more...

What is silicon made of?

What is silicon made of? Silicon is made from silicon dioxide, or silica – found in nature as quartz, or common beach sand. First, the silica is put into a Silicon Furnace, where a carbon electrical arc reacts at high temperatures to drive the oxygen out of the silica, combining with [...]

2014-02-28 Read more...

Temperature dependent growth of InGaN/GaN single quantum well

Temperature dependent growth of InGaN/GaN single quantum well InGaN/GaN single quantum well (SQW) structures under various InGaN growth temperatures have been grown by metal organic chemical vapor deposition (MOCVD), the surface morphologies and optical properties are investigated. The radius of the typical V-pits on the SQW surface is affected by [...]

2014-02-26 Read more...

PAM-XIAMEN offers 4 inch Blue LED Wafer

PAM-XIAMEN offers 4 inch Blue LED Wafer Anticipating exploding demand for blue LED chips, Xiamen Powerway Advanced Material Co.,Ltd. (PAM-XIAMEN) shift a GaN LED production line from the current 2-inch-wafer-based operation to 4-inch-wafer facilities within a couple of years. “We have established the production process based on 4-inch patterned sapphire substrates [...]

2014-02-24 Read more...

New InGaAs Structure Wafer

New InGaAs Structure Wafer  Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a pnictogen or “group V” element. [...]

2014-02-21 Read more...

Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study

Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study Reflection high-energy electron diffraction (RHEED) was used for in situ monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2° off (001) GaAs substrates. The [...]

2014-02-21 Read more...

AlGaInP epi wafer

 AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers. AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure. 1.Specs of AlGaInP Wafers on Chips AlGaInP LED Wafer for chip Item No.:PAM-CAYG1101 Dimensions: Growth Technique – [...]

2014-02-19 Read more...

Photoemission study of LT-GaAs

Photoemission study of LT-GaAs The electronic structure of GaAs (1 0 0) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As2/Ga flux ratios. Analysis of As 3d core level spectra does not [...]

2014-02-11 Read more...