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Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers

Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and reflectivity experiments, both at 4.5 K [...]

2013-10-14 , , , Read more...

GaAs Schottky Diode Epitaxial Wafers

We offer GaAs Epitaxial Wafers for Schottky Diode as follows: 1. GaAs Schottky Diode Epi Structures No.1 GaAs Schottky Diode Epiwafer Epitaxial Structure PAM210319 No. Material Composition Thickness Target(um) Thickness Tol. C/C(cm3) Target C/C     Tol. Dopant Carrrier Type 4 GaAs   1.00 ±10% ＞5.0E18 N/A Si N++ 3 GaAs   0.28 ±10% 2.0E17 ±10% Si N 2 Ga1-xAlxAs x=0.50 1 ±10% — N/A — — 1 GaAs   0.05 ±10% — N/A — — Substrate: 2”,3”,4″   No.2 4Inch GaAs Epitaxial Wafer for Schottky Diode PAM210326 -SDE No. Material Thickness Doping Doping Concentration 3 GaAs schottky contact layer – n – 2 GaAs ohmic contact layer – – 5×10^18 cm-3 1 Low temperature GaAs 2um – – 0 Semi-insulating GaAs (100) substrate –     2. About GaAs Schottky Diode [...]

2013-10-14 Read more...

Improved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers

mproved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers Improved process control, lowered costs and reduced risks can be realized through the use of non-destructive mobility and sheet charge density measurements during the fabrication of [...]

2013-10-12 , , Read more...

LT-GaAs

We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications. 1. 2″ LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier ＜1ps Dislocation Density <1×106cm-2 Useable Surface Area ≥80% Polishing Single side polished Substrate GaAs substrate   Remark: Other conditions: 1) GaAs substrate should be undoped/semi-insulating with (100)orientation. 2) Growth temperature: ~ 200-250 C 2. LT-GaAs Introduction: Low-temperature grown GaAs is [...]

2013-10-11 Read more...

Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining

Slicing, cleaning and kerf analysis of germanium wafers machined by wire electrical discharge machining   This paper investigates the slicing of germanium wafers from single crystal, gallium-doped ingots using wire electrical discharge machining. Wafers with a thickness of 350 μm and a diameter of 66 mm were cut using 75 and 100 μm molybdenum [...]

2013-10-11 , , Read more...

Coulometric determination of arsenic in gallium arsenide crystal wafers

Coulometric determination of arsenic in gallium arsenide crystal wafers The determination of small variations in the stoichiometry of undoped, semi-insulating gallium arsenide can be achieved by using constant current coulometry. Samples taken from a wafer are etched in HF, dissolved in NaOH-peroxide solution, then treated with a citric acid buffer. [...]

2013-10-10 , , , , Read more...

Gas filled prototype of a CdZnTe pixel detector

Gas filled prototype of a CdZnTe pixel detector   CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5–100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. (Nucl. Instrum. Methods A 458 [...]

2013-10-09 Read more...