Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and [...]
Optical and electronic simulation of gallium arsenide/silicon tandem four terminal solar cells A tandem solar cell in a mechanical (stack like) arrangement of gallium arsenide and silicon solar cells is evaluated as a pathway towards higher efficiency terrestrial solar cells. In this work the technical feasibility of the tandem solar [...]
Effects of mosaic structure on the physical properties of CdZnTe crystals Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and Fourier transform infrared (FT-IR) measurements. [...]
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer between the grown ZnO nanorods and substrate, which can interfere with light emission and extraction. Here we report the growth of high-quality, [...]
Several types of GaN MOSFETs with normally-off operation have been fabricated on insulating substrate and evaluated. In recessed-gate GaN MOSFET, the threshold voltage (Vth) can be easily controlled, but the current drivability is modest and needs to be improved by adopting appropriate device structure and/or process. We achieved enhanced [...]
The photoluminescent germanium nanocrystals (Ge-NCs) were successfully incorporated into electrospun polymeric nanofiber matrix in order to develop photoluminescent nanofibrous composite web. In the first step, the synthesis of Ge-NCs was achieved by nanosecond pulsed laser ablation of bulk germanium wafer immersed in organic liquid. The size, the structural and the chemical [...]
High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa flux dependent structural, morphological, and electrical characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high-energy electron diffraction (RHEED), atomic force microscopy [...]
An important dispersion in the Rsheet measurement of AlGaN/GaN wafers was found on different samples, with or without SiN passivation. The dispersion is due to a drift of the Rsheet appearing when the sample is placed in the dark. This drift is different for each sample and it is caused by [...]
In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN layer when compared with the [...]
A phenomenon commonly encountered in grinding of silicon wafers is the grinding marks, which are difficult to remove by subsequent polishing process, and have been a great obstacle to the manufacture of silicon wafers with higher flatness. In this paper, the grinding marks formation mechanism was clarified, a grinding [...]
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