PAM-XIAMEN offers M Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN M-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
M plane (1-100) off angle toward A-axis 0 ±0.5°
M plane (1-100) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.
2 inch in diameter wafers
Monocrystalline silicon with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 microns,
Warping <35 microns
For more information, please visit our website: [...]
2019-07-01meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
2″
280
P/P
1-5
SEMI Prime,
Si:P
[100-6°]
2″
300
P/E
1-5
SEMI Prime,
n-type Si:P
[100]
2″
350
P/P
1-50
Test, Polished but dirty and scratched. Can be re-polished for additional fee, NO Flats
n-type Si:P
[100] ±1°
2″
400 ±15
P/P
1-10
SEMI Prime, TTV<3μm, Empak cst
n-type Si:P
[100]
2″
3175
P/E
1-3
Prime, NO Flats, Individual cst
n-type Si:P
[100] ±1.0°
2″
6000
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:P
[100]
2″
300
P/P
0.8-1.0
SEMI Prime,
n-type Si:Sb
[100]
2″
300
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[100]
2″
500
P/P
0.01-0.02
SEMI Prime, , in [...]
2019-03-07meta-author
PAM-XIAMEN can provide InP laser structure with InAlGaAs quantum well for 1300nm lasers. InGaAsP / InP and AlGaInAs / InP quantum well material systems have become the most widely used gain media. Compare with InGaAsP / InP material, AlGalnAs / InP has larger conduction band offset than InGaAsP / InP material, so it can more effectively prevent the leakage [...]
2023-04-04meta-author
PAM XIAMEN offers Tatalum Metal Substrate & Foil ( Polycrystalline ).
Symbol Ta
Atomic Number 73
Atomic Weight: 180.95
Density: 16.69 g/cm3
Melting Point: 2996 °C
Boiling Point: 5425+/-100 °C
Ta – Tantalum Polycrystalline Metallic Foil: 0.05mm thick x 200mm Width x 400 mm Length
Ta [...]
2019-05-10meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 1000±25μm.
Thickness 1000±25μm
Si, 150mm dia. SSP
N type Phos or antimony
resistivity 0.01-0.2 ohm-cm
with 200A thermal OX and
1200A LPCVD nitride – stoichiometric
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-01meta-author