Overview of Micro-LED History and Current Developments
According to LEDinside’s latest findings, micro-LEDs will enter mass production by 2018. To understand micro-LED technology comprehensively, and tap into its market potential, LEDinside has organized its history, current situation, theory, manufacturing process, and related manufacturers.
History
The history of micro-LEDs [...]
2016-08-22meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2595
n–type Si:Sb
[111–4°] ±0.5°
4″
420
P/EOx
0.008–0.018 {0.0138–0.0151}
SEMI Prime, 2Flats, Empak cst, Epi edges, TTV<2μm, HBSD+LTO seal
PAM2596
n–type Si:Sb
[111–4.0°] ±0.5°
4″
475 ±15
P/E
0.005–0.020 {0.0113–0.0156}
SEMI Prime, 2Flats, Empak cst
PAM2597
n–type Si:As
[111]
4″
450
P/E
0.004–0.005
SEMI Prime, 1Flat, Empak cst
PAM2598
n–type Si:As
[111] [...]
2019-02-19meta-author
InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application
We report on the selective area metal–organic vapour phase epitaxial growth of an InGaAs nano-pillar array on a partially masked InP(111)B substrate. This technique [...]
2018-04-26meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3054
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3055
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3056
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3057
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3058
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3059
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3060
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-13meta-author
LED manufacturer Lextar Electronics claims to be the first LED maker in Taiwan to demonstrate blue-light emission from a processed 6-inch-diameter LED wafer.
(more…)
2012-05-21meta-author
PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm:
1. Red Infrared AlGaAs / GaAs LED Epi Wafer
PAM-190723-LED
Structure
Thickness, um
Type
Composition
CC, cm-3
Wide-gap window
1
р
AlхGa1-хAs (х=0,25-0,3)
(2-5) ∙1018
Barrier layer
0.06
р
AlхGa1-хAs (х=0,25-0,3)
(0.8-1) ∙1018
Active layer
–
GaAs
undoped
–
Al0,2Ga0,8As
Barrier layer
0.06
n
AlхGa1-хAs (х=0,25-0,3)
(0.5-1) ∙1017
Wide-gap window
6
n
AlхGa1-хAs
(1-2)∙1018
(х=0,3-0,35)
Stop layer
0.1
–
AlхGa1-хAs
–
(х=0,9-1)
Buffer layer
–
n
GaAs
–
Substrate
–
n+
GaAs
–
2. Where is the [...]
2020-05-18meta-author