GaAs (galium arsenida) Wafers

GaAs (galium arsenida) Wafers

As a leading GaAs substrate supplier, PAM-XIAMEN manufactures Epi-ready GaAs(Gallium Arsenide) Wafer Substrate including semi-conducting n type, semi-conductor undoped and p type with prime grade and dummy grade. The GaAs substrate resistivity depends on dopants, Si doped or Zn doped is (0.001~0.009) ohm.cm, undoped one is >=1E7 ohm.cm. The GaAs wafer crystal orientation should be (100) and (111). For (100) orientation, it can be 2°/6°/15° off. The EPD of GaAs wafer normally is <5000/cm2 for LED or <500/cm2 for LD or microelectronics.

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(galium arsenida) GaAs Wafer

PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and GaAs wafer manufacturing process, established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for GaAs wafer cleaning and packaging. Our GaAs wafers include 2~6 inch ingot/wafers for LED, LD and Microelectronics applications. We are always dedicated to improve the quality of currently GaAs wafer substrates and develop large size substrates. The GaAs wafer size offered is in 2”, 3”, 4” and 6”, and the thickness should be 220-700um. Moreover, the GaAs wafer price from us is competitive.

1. GaAs Wafer Specifications

1.1 (GaAs)galium arsenidaWafer untuk Permohonan LED

Perkara Spesifikasi Kenyataan
Jenis pengaliran SC / n-jenis SC / p-jenis dengan Zn dadah Tersedia
Menghubungi pertumbuhan VGF  
Dopant Silicon Zn didapati
wafer diamter 2, 3 & 4 inci Jongkong atau as-cut availalbe
Crystal Orientation (100) 2 °/ 6 ° / 15 ° luar (110) misorientation lain yang tersedia
OF EJ atau AS  
Konsentrasi Pembawa (0.4 ~ 2.5) E18 / cm3  
Kerintangan di RT (1.5 ~ 9) E-3 Ohm.cm  
Mobility 1500 ~ 3000cm2 / V.sec  
Etch Pit Ketumpatan <5000 / cm2  
laser Marking atas permintaan  
kemasan permukaan P / E atau P / P  
ketebalan 220 ~ 450um  
epitaxy Ready Ya  
Pakej bekas wafer tunggal atau kaset

 

1.2 (GaAs)galium arsenidaWafer untuk Permohonan LD

Perkara Spesifikasi Kenyataan
Jenis pengaliran SC / n-jenis  
Menghubungi pertumbuhan VGF  
Dopant Silicon  
wafer diamter 2, 3 & 4 inci Jongkong atau as-memotong tersedia
Crystal Orientation (100) 2 °/ 6 ° / 15 ° luar (110) misorientation lain yang tersedia
OF EJ atau AS  
Konsentrasi Pembawa (0.4 ~ 2.5) E18 / cm3  
Kerintangan di RT (1.5 ~ 9) E-3 Ohm.cm  
Mobility 1500 ~ 3000 cm2 / V.sec  
Etch Pit Ketumpatan <500 / cm2  
laser Marking atas permintaan  
kemasan permukaan P / E atau P / P  
ketebalan 220 ~ 350um  
epitaxy Ready Ya  
Pakej bekas wafer tunggal atau kaset

 

1.3 (GaAs)galium arsenidaWafer, Semi-penebat untuk Microelectronics Aplikasi

Perkara Spesifikasi Kenyataan
Jenis pengaliran penebat  
Menghubungi pertumbuhan VGF  
Dopant Undoped  
wafer diamter 2, 3 & 4 inci  Ingot available
Crystal Orientation (100)+/- 0.5°  
OF EJ, Amerika Syarikat atau kedudukan  
Konsentrasi Pembawa n / a  
Kerintangan di RT > 1E7 Ohm.cm  
Mobility > 5000 cm2 / V.sec  
Etch Pit Ketumpatan <8000 / cm2  
laser Marking atas permintaan  
kemasan permukaan P / P  
ketebalan 350 ~ 675um  
epitaxy Ready Ya  
Pakej bekas wafer tunggal atau kaset

 

1.4 6″ (150mm)(GaAs)galium arsenidaWafer, Semi-penebat untuk Microelectronics Aplikasi

Perkara Spesifikasi Kenyataan
Jenis pengaliran Semi-penebat  –
berkembang Menghubungi VGF  –
Dopant Undoped  –
Jenis N  –
Diamater (mm) 150 ± 0.25  –
orientasi (100)0°±3.0°  –
NOTCH Orientation 〔010〕±2°  –
NOTCH Deepth (mm) (1-1.25)mm   89°-95°  –
Konsentrasi Pembawa please consult our sales team  –
Kerintangan (ohm.cm) >1.0×107 or 0.8-9 x10-3  –
Mobility (cm2 / vs) please consult our sales team  –
kehelan please consult our sales team  –
Ketebalan (mikron) 675 ± 25  –
Pengecualian Edge untuk Bow dan Warp (mm) please consult our sales team  –
Bow (mikron) please consult our sales team  –
Warp (mikron) ≤20.0  –
TTV (mikron) ≤10.0  –
TIR (mikron) ≤10.0  –
LFPD (mikron) please consult our sales team  –
menggilap P / P Epi-Ready  –

 

1.5 2″(50.8mm) LT-GaAs (Rendah arsenida Galium suhu-Grown) Wafer Spesifikasi

Perkara Spesifikasi
Jenis pengaliran Semi-penebat
berkembang Menghubungi VGF
Dopant Undoped
Jenis N
Diamater (mm) 150 ± 0.25
orientasi (100)0°±3.0°
NOTCH Orientation 〔010〕±2°
NOTCH Deepth (mm) (1-1.25)mm   89°-95°
Konsentrasi Pembawa please consult our sales team
Kerintangan (ohm.cm) >1.0×107 or 0.8-9 x10-3
Mobility (cm2 / vs) please consult our sales team
kehelan please consult our sales team
Ketebalan (mikron) 675 ± 25
Pengecualian Edge untuk Bow dan Warp (mm) please consult our sales team
Bow (mikron) please consult our sales team
Warp (mikron) ≤20.0
TTV (mikron) ≤10.0
TIR (mikron) ≤10.0
LFPD (mikron) please consult our sales team
menggilap P / P Epi-Ready
 
* Kami juga boleh menyediakan poli GaAs kristal bar, 99.9999% (6N).

 

2. GaAs Wafer Market & Application

Gallium arsenide is an important semiconductor material. It belongs to group III-V compound semiconductors and the zinc blende crystal lattice structure, with a lattice constant of 5.65×10-10m, a melting point of 1237°C, and a band gap of 1.4 electron volts. Gallium arsenide can be made into semi-insulating high-resistance materials, which can be used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times greater than silicon, SI GaAs substrate has been importantly used in the fabrication of microwave devices and high-speed digital circuits. Semiconductor devices fabricated on gallium arsenide have the advantages of high frequency, high temperature, low temperature performance, low noise, and strong radiation resistance, which make the GaAs substrate market enlarge.

 

3. Test certificate of GaAs wafer can include below analysis if necessary:

1/Surface roughness of Gallium Arsenide including front side and backside(nanometers).

2/Doping concentration of Gallium Arsenide(cm-3)

3/EPD of Gallium Arsenide(cm-2)

4/Mobility of Gallium Arsendie(V.sec)

5/X-ray diffraction analysis (rocking curves) of Gallium Arsenide: Diffraction reflection curve half-width

6/Low-temperature photoluminescence (emission spectra in the range 0.7-1.0 μm) of Gallium Arsenide: The fraction of exciton photoluminescence in the emission spectrum of the near-IR range at a temperature of 4K or 5 K and an optical excitation density of 1 W / cm2

7/Transmission rate or Absorption coefficient: for instant, we can measure absorption coefficient of single crystal undoped GaAs at 1064nm: <0.6423 cm-1, and this corresponds to a transmission minimum of 33.2% for an exactly 6.5mm thick blank at 1064nm.

 

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