Gan berasaskan LED Epitaxial Wafer
Gan PAM-XIAMEN-kanak (galium nitrida) berasaskan LED wafer epitaxial adalah untuk tinggi kecerahan diod ultra biru dan hijau pemancar cahaya (LED) dan diod laser (LD) permohonan.
- Penerangan
Penerangan Produk
InGaN/Gan(gallium nitride) based LED Epitaxial Wafer
As LED wafer manufacturer,we offer GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers.it is by MOCVD with PSS or flat sapphire for LCD back light, mobile,electronic or UV(ultraviolet), with blue or green or red emission,including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.
Gan pada Al2O3-2 "epi wafer Spesifikasi (LED Epitaxial wafer)
White: 445~460 nm |
Blue: 465~475 nm |
Green: 510~530 nm |
Teknik 1. Pertumbuhan - MOCVD
2.Wafer diameter: 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Wafer saiz corak: 3X2X1.5μm
struktur 5.Wafer:
lapisan struktur | Thickness(μm) |
p-Gan | 0.2 |
p-AlGaN | 0.03 |
InGaN / Gan (kawasan aktif) | 0.2 |
n-Gan | 2.5 |
u- Gan | 3.5 |
Al2O3 (substrat) | 430 |
parameter 6.Wafer untuk membuat cip:
Perkara | Warna | Saiz cip | Ciri-ciri | rupa | |
PAM1023A01 | Blue | 10mil x 23mil | ![]() |
lampu | |
Vf = 2.8 ~ 3.4V | latar LCD | ||||
Po = 18 ~ 25MW | peralatan mudah alih | ||||
Wd = 450 ~ 460nm | elektronik pengguna | ||||
PAM454501 | Blue | 45mil x 45mil | Vf = 2.8 ~ 3.4V | ![]() |
pencahayaan umum |
Po = 250 ~ 300MW | latar LCD | ||||
Wd = 450 ~ 460nm | paparan luar |
7.Application of LED epitaixal wafer:*If you need to know more detail information of Blue LED Chip, please contact with our sales departments
lampu
lampu belakang LCD
peralatan mudah alih
elektronik pengguna
8.Specification of LED Wafer as an example:
Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)
9.GaAs(Gallium arsenide)based LED Wafer:
Mengenai GaAs wafer LED, mereka ditanam oleh MOCVD, lihat di bawah panjang gelombang GaAs LED wafer:
Merah: 585nm, 615nm, 620 ~ 630nm
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm
10. Definition of LED wafer:
What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.
Untuk ini GaAs detail LED ciri-ciri komputer wafer, sila layari:GaAs Epi Wafer bagi LED
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