Gan berasaskan LED Epitaxial Wafer

Gan berasaskan LED Epitaxial Wafer

Gan PAM-XIAMEN-kanak (galium nitrida) berasaskan LED wafer epitaxial adalah untuk tinggi kecerahan diod ultra biru dan hijau pemancar cahaya (LED) dan diod laser (LD) permohonan.

  • Penerangan

Penerangan Produk

The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.

1. LED Wafer List

LED Epitaxial Wafer

Perkara Size Orientation Emission Wavelength Thickness   substrat Surface Usable area
 PAM-50-LED-BLUE-F 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Sapphire P/L >90%
 PAM-50-LED-BLUE-PSS 50mm 0°±0.5° blue light 445-475nm 425um+/-25um Sapphire P/L >90%
 PAM-100-LED-BLUE-F 100mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-100-LED-BLUE-PSS 100mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-150-LED-BLUE 150mm 0°±0.5° blue light 445-475nm / Sapphire P/L >90%
 PAM-100-LED-BLUE-SIL 50mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-100-LED-BLUE-SIL 100mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-150-LED-BLUE-SIL 150mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-200-LED-BLUE-SIL 200mm 0°±0.5° blue light 445-475nm / Silicon P/L >90%
 PAM-50-LED-GREEN-F 50mm 0°±0.5° green light 510-530nm 425um+/-25um Sapphire P/L >90%
 PAM-50-LED-GREEN-PSS 50mm 0°±0.5° green light 510-530nm 425um+/-25um Sapphire P/L >90%
 PAM-100-LED-GREEN-F 100mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-100-LED-GREEN-PSS 100mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-150-LED-GREEN 150mm 0°±0.5° green light 510-530nm / Sapphire P/L >90%
 PAM-100-LED-RED-GAAS-620 100mm 15°±0.5° red light 610-630nm / GaAs P/L >90%
PAM210527-LED-660 100mm 15°±0.5° red light 660nm / GaAs P/L >90%
 PAM-210414-850nm-LED 100mm 15°±0.5° IR 850nm / GaAs P/L >90%
 PAMP21138-940LED 100mm 15°±0.5° IR 940nm / GaAs P/L >90%
 PAM-50-LED-UV-365-PSS 50mm 0°±0.5° UVA 365 nm 425um+/-25um Sapphire    
 PAM-50-LED-UV-405-PSS 50mm 0°±0.5° UVA 405 nm 425um+/-25um Sapphire    
 PAM-50-LED-UVC-275-PSS 50mm 0°±0.5° UVC 275nm 425um+/-25um Sapphire    
 PAM-50-LD-BLUE-405-SIL 50mm 0°±0.5° blue light 405nm / Silicon P/L >90%
 PAM-50-LD-BLUE-450-SIL 50mm 0°±0.5° blue light 450nm / Silicon P/L >90%


As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.
2. InGaN/
Gan(gallium nitride) based LED Epitaxial Wafer

Gan pada Al2O3-2 "epi wafer Spesifikasi (LED Epitaxial wafer)

White: 445~460 nm
Blue:  465~475 nm
Green: 510~530 nm

Teknik 1. Pertumbuhan - MOCVD
2.Wafer diameter: 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Wafer saiz corak: 3X2X1.5μm

3. Wafer structure:

lapisan struktur Thickness(μm)
p-Gan 0.2
p-AlGaN 0.03
InGaN / Gan (kawasan aktif) 0.2
n-Gan 2.5
u- Gan 3.5
Al2O3 (substrat) 430

 

4. Wafer parameters to make chips:

em Warna Saiz cip Ciri-ciri rupa
PAM1023A01 Blue 10mil x 23mil lampu
Vf = 2.8 ~ 3.4V latar LCD
Po = 18 ~ 25MW peralatan mudah alih
Wd = 450 ~ 460nm elektronik pengguna
PAM454501 Blue 45mil x 45mil Vf = 2.8 ~ 3.4V pencahayaan umum
Po = 250 ~ 300MW latar LCD
Wd = 450 ~ 460nm paparan luar

 

5. Application of LED epitaixal wafer: 

*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments

lampu
lampu belakang LCD
peralatan mudah alih
elektronik pengguna

6. Specification of LED Epi Wafer as an example:

Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)

7.GaAs(Gallium arsenide)based LED Wafer Material:

Mengenai GaAs wafer LED, mereka ditanam oleh MOCVD, lihat di bawah panjang gelombang GaAs LED wafer:
Merah: 585nm, 615nm, 620 ~ 630nm
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm

8. Definition of LED Epitaxial Wafer:

What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.

 

Untuk ini GaAs detail LED ciri-ciri komputer wafer, sila layari:GaAs Epi Wafer bagi LED

Untuk UV LED ciri-ciri komputer wafer, sila layari:UV LED Epi Wafer  

Untuk wafer LED pada ciri-ciri komputer silikon, sila layari:LED Wafer di Silicon

Untuk ciri-ciri komputer Blue Gan LD Wafer, sila layari: Blue Gan LD Wafer

GaN LED Epi on Sapphire

850nm and 940nm infrared LED wafer

850-880nm and 890-910nm Red Infrared AlGaAs /GaAs LED Epi-Wafer

630nm GaAs LED Wafer

GaN Wafers to Fabricate LED Devices

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