Gan berasaskan LED Epitaxial Wafer

Penerangan Produk

The LED epitaxial wafer is a substrate heated to an appropriate temperature. The LED wafer material is the cornerstone of the technology development for the semiconductor lighting industry. Different substrate materials require different LED epitaxial wafer growth technology, chip processing technology and device packaging technology. The substrate for LED epi wafer determines the development route of semiconductor lighting technology. To achieve luminous efficiency, epitaxial wafer suppliers pay more attention to GaN based LED epitaxial wafer, since the epitaxial wafer price is in low cost, and the epi wafer defect density is small. LED epi wafer advantage on GaN substrate is the realization of high efficiency, large area, single lamp and high power, which make the process technology simplify and improve the large yield rate. The development prospects of the LED epi wafer market are optimistic.

1. LED Wafer List

As a LED epitaxial wafer manufacturer, PAM-XIAMEN can offer activated and unactivated GaN Epi LED wafer for LED and laser diodes (LD) application,such as For micro LED or ultra thin wafer or UV LED researches or LED manufacturers. LED epitaxial wafer on GaN is grown by MOCVD with PSS or flat sapphire for LCD back light, mobile, electronic or UV(ultraviolet), with blue or green or red emission, including InGaN/GaN active area and AlGaN layers with GaN well/AlGaN barrier for different chip sizes.

2. InGaN/Gan(gallium nitride) based LED Epitaxial Wafer

Gan pada Al2O3-2 "epi wafer Spesifikasi (LED Epitaxial wafer)

Teknik 1. Pertumbuhan - MOCVD
2.Wafer diameter: 50.8mm
3.Wafer substrate material: Patterned Sapphire Substrate(Al2O3) or Flat Sapphire
4.Wafer saiz corak: 3X2X1.5μm

3. Wafer structure:

4. Wafer parameters to make chips:

em	Warna	Saiz cip	Ciri-ciri	rupa
PAM1023A01	Blue	10mil x 23mil			lampu
			Vf = 2.8 ~ 3.4V		latar LCD
			Po = 18 ~ 25MW		peralatan mudah alih
			Wd = 450 ~ 460nm		elektronik pengguna
PAM454501	Blue	45mil x 45mil	Vf = 2.8 ~ 3.4V		pencahayaan umum
			Po = 250 ~ 300MW		latar LCD
			Wd = 450 ~ 460nm		paparan luar

5. Application of LED epitaixal wafer: 

*If you need to know more detail information of Blue LED Epitaxial Wafer, please contact with our sales departments

lampu
lampu belakang LCD
peralatan mudah alih
elektronik pengguna

6. Specification of LED Epi Wafer as an example:

Spec PAM190730-LED
– size : 4 inch
– WD : 455 ± 10nm
– brightness : > 90mcd
– VF : < 3.3V
– n-GaN Thickness : <4.1㎛
– u-GaN thickness : <2.2㎛
– substrate : patterned sapphire substrate (PSS)

7.GaAs(Gallium arsenide)based LED Wafer Material:

Mengenai GaAs wafer LED, mereka ditanam oleh MOCVD, lihat di bawah panjang gelombang GaAs LED wafer:
Merah: 585nm, 615nm, 620 ~ 630nm
Yellow:587 ~ 592nm
Yellow/Green: 568 ~ 573nm

8. Definition of LED Epitaxial Wafer:

What we offer is bare LED epi wafer or not processed wafer without lithography processes, n- and metals contacts, etc. And you can fabricate the LED chip using your fabrication equipment for different application such as nano optoelectronics research.

Untuk ini GaAs detail LED ciri-ciri komputer wafer, sila layari:GaAs Epi Wafer bagi LED

Untuk UV LED ciri-ciri komputer wafer, sila layari:UV LED Epi Wafer  

Untuk wafer LED pada ciri-ciri komputer silikon, sila layari:LED Wafer di Silicon

Untuk ciri-ciri komputer Blue Gan LD Wafer, sila layari: Blue Gan LD Wafer

GaN LED Epi on Sapphire

850nm and 940nm infrared LED wafer

850-880nm and 890-910nm Red Infrared AlGaAs /GaAs LED Epi-Wafer

630nm GaAs LED Wafer

GaN Wafers to Fabricate LED Devices

GaN LED Structure

GaN LED Structure Epitaxy on Flat or PSS Sapphire Substrate

Pertumbuhan Epitaxial GaN pada Nilam untuk LED

Formation of V-Shaped Pits in Nitride Films Grown by Metalorganic Chemical Vapor Deposition