Gan HEMT Epitaxial Wafer

Gan HEMT Epitaxial Wafer

Gallium Nitride (GaN) HEMT (Transistor Mobiliti Elektron Tinggi) adalah teknologi transistor kuasa RF generasi seterusnya. Berkat teknologi GaN, PAM-XIAMEN kini menawarkan AlGaN / GaN HEMT Epi Wafer pada safir atau Silikon, dan AlGaN / GaN pada templat safir.

  • Penerangan

Penerangan Produk

GaN HEMT epitaxial wafer is a multilayer film grown epitaxially on a substrate, which usually includes a nucleation layer, a transition layer, a buffer layer, a channel layer, a barrier layer, a cap layer, and a passivation layer from bottom to top. The nucleation layer, like AlGaN or AlN, is used to prevent the substrate material from diffusing into the GaN epitaxial layer. The transition layer may contain hierarchical AlGaN, AlN/GaN superlattice or multilayer AlN to balance the stress between the GaN and the substrate. The higher the Al content in the barrier layer of AlGaN, the higher the 2DEG concentration at the heterojunction. Meanwhile, the lower the threshold voltage of the device, and the higher the current capacity. As the Al ratio increasing, the degree of heterogeneous crystal lattice mismatch will be higher, resulting in a decrease in gallium nitride HEMT electron mobility and a decrease in current capacity.

The High Electron Mobility Transistor (HEMT) is developed based on GaN with unique heterostructure and two-dimensional electron gas. The GaN HEMT advantages include high breakdown strength, low on-resistance and faster The switching speed, which is very suitable for medium and low voltage and medium and small power systems, such as travel adapters, wireless chargers, AC-DC converters, smart home appliances, etc. The epitaxial wafer with HEMT structure is more attractive currently for high-frequency converters, in which GaN HEMT breakdown voltage is 600~650 V. With the rapid development of gallium nitride HEMT epi technology, the price of GaN HEMT devices will be competitive, which can gain large GaN HEMT market for GaN HEMT manufacturers. Moreover, due to the gallium nitride HEMT reliability, it can be widely used in industrial fields, such as photovoltaic inverters, energy storage systems, and electric vehicles.

1. GaN HEMT Material: Available size:2”,4”,6”,8”:

More specific parameters of gallium nitride HEMT wafer for D-mode GaN HEMTs, E-mode GaN HEMTs, GaN HEMT power amplifier and RF, please refer to:

Gan pada Si untuk Kuasa, D-mode

Gan pada Si untuk Kuasa, E-mode

Gan pada Si untuk RF

Gan di Sapphire untuk Kuasa

Gan di Sapphire untuk RF

Gan pada SiC untuk RF

Gan pada Gan

2. Now we show you an example as follows:

2.1 2 "(50.8mm) Gan HEMT Epitaxial Wafers

We offer 2″(50.8mm) gallium nitride HEMT Wafers, the GaN HEMT structure is as follows:

Struktur (dari atas ke bawah):

* Undoped Gan cap (2 ~ 3nm)

AlxGa1-XN (18 ~ 40nm)

AlN (lapisan penampan)

un-didopkan Gan (2 ~ 3um)

Sapphire substrat

* Kita boleh menggunakan Si3N untuk menggantikan Gan di atas, lekatan yang kuat, ia disalut oleh sputter atau PECVD.

2.2 AlGaN/GaN HEMT Epi Wafer on sapphire/GaN

Layer # Kandungan ketebalan X Dopant Konsentrasi Pembawa
5 Gan 2nm
4 AlxGa1–xN 8nm 0.26
3 AlN 1nm Un-didopkan
2 Gan ≥1000 nm Un-didopkan
1 Lapisan penampan / Peralihan
substrat Silicon 350μm / 625μm

2.3  2″(50.8mm),4″ (100mm)AlGaN/GaN HEMT Epi Wafer on Si

2.3.1 Specifications for Aluminium Gallium Nitride (AlGaN) / Gallium Nitride (Gan) High Electron Mobility Transistor (HEMT) pada substrat silikon.

keperluan Spesifikasi
AlGaN / Gan HEMT Epi Wafer pada Si  
struktur AlGaN / Gan HEMT rujuk 1.2
substrat bahan Silicon
orientasi <111>
kaedah pertumbuhan terapung Zon
Jenis pengaliran P atau N
Size (inci) 2 ", 4"
Ketebalan (mikron) 625
Bahagian belakang kasar
Kerintangan (Ω-cm) >6000
Bow (mikron) ≤ ± 35

2.3.2 Epi structure: Crack-free Epilayers

Layer # Kandungan ketebalan X Dopant Konsentrasi Pembawa
5 Gan 2nm
4 AlxGa1–xN 8nm 0.26
3 AlN 1nm Un-didopkan
2 Gan ≥1000 nm Un-didopkan
1 Lapisan penampan / Peralihan
substrat Silicon 350μm / 625μm

2.3.3 Electrical Properties of the AlGaN/GaN HEMT structure

2DEG Mobility (300 K): ≥1,800 cm2 / Vs

2DEG Lembaran Pembawa Ketumpatan (pada 300 K): ≥0.9 × 1013 cm-2

RMS Kekasaran (AFM): ≤ 0.5 nm (5.0 mikron × 5.0 mikron imbasan Area)

2.4  2″(50.8mm)AlGaN/GaN on sapphire

Untuk spesifikasi AlGaN / Gan pada template nilam, sila hubungi jabatan jualan kami: [email protected]

GaN HEMT Applications: Used in blue laser diodes, ultraviolet LEDs (down to 250 nm), and AlGaN/GaN HEMTs device.

3. Explanation of AlGaN/Al/GaN HEMTs:

HEMTs Nitride sedang intensif dibangunkan untuk elektronik berkuasa tinggi dalam frekuensi tinggi penguatan dan pensuisan kuasa aplikasi. Sering prestasi tinggi dalam operasi DC hilang apabila HEMT dihidupkan - sebagai contoh, runtuh dalam semasa apabila isyarat get berdenyut. Ia dikatakan bahawa kesan tersebut adalah berkaitan dengan caj memerangkap bahawa topeng kesan pintu pada aliran semasa. Bidang-pinggan di atas sumber dan pintu elektrod telah digunakan untuk memanipulasi medan elektrik dalam peranti, mengurangkan fenomena semasa runtuh itu.

4. GaN EpitaxialTechnology — Customized GaN epitaxy on SiC,Si and Sapphire substrate for HEMTs, LEDs:

GAN HEMT Epitaxial wafer (GAN EPI-wafer)

PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers

5. GaN Device:

Gan SBD

Gan HEMT

6. Test Characterization Equipment:

Lembaran sentuh rintangan

Laser Filem Nipis Ketebalan Pemetaan

High Temp / High Kelembapan Reverse Bias

kejutan terma

DIC Nomarski Mikroskop

Atomic Force Microscope (AFM)

Permukaan Defectivity Scan

Temp tinggi Reverse Bias

4PP Lembaran rintangan

Sentuh Dewan Mobility

suhu Cycle

X-ray Diffraction (XRD) / Pantulan (XRR)

Ellipsometer Ketebalan

profilometer

CV Tester

7. Foundry Fabrication:

we also offer foundry GaN HEMT fabrication in the following process as follows:

MOCVD Epitaxy

Metal Sputtering / E-Beam

Kering / Wet Metal / dielektrik Etch

Thin Film PECVD / LPCVD / Sputtering

RTA / Relau Penyepuhlindapan

Photolithography (0.35um min. CD)

ion Implantasi

GaN/SiC HEMT epi-wafers

Aluminium gallium arsenide epi wafer

Cip 650V GaN FETs untuk Pengecasan Cepat

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