Freestanding Gan substrat
PAM-XIAMEN telah menubuhkan teknologi pembuatan untuk berdiri sendiri (galium nitrida) wafer Gan substrat, yang adalah untuk UHB-LED dan LD. Berkembang dengan teknologi hidrida fasa wap epitaxy (HVPE), substrat Gan kami mempunyai ketumpatan kecacatan rendah.
- Penerangan
Penerangan Produk
Freestanding Gan substrat
As a leading GaN substrate supplier, PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is Bulk GaN substrate for UHB-LED, LD and fabrication as MOS-based devices. Grown by hydride vapour phase epitaxy (HVPE) technology, our Gan substrat for III-nitride devices has low defect density and less or free macro defect density. The GaN substrate thickness is 330~530μm.
In addition to power devices, gallium nitride semiconductor substrates are increasingly used in the manufacture of white light LEDs because the GaN LED substrates provide improved electrical characteristics and their performance exceeds current devices. Moreover, the rapid development of gallium nitride substrate technology has led to the development of high-efficiency GaN free standing substrates with low defect density and free macro defect density. Therefore, such GaN substrates can be increasingly used to white LEDs. As a result, the bulk GaN substrate market is growing rapidly. By the way, bulk GaN wafer can be used for testing vertical power device concepts.
Spesifikasi Freestanding Gan substrat
Di sini menunjukkan spesifikasi terperinci:
4″ N type Si doped GaN(Gallium Nitride) Free-standing Substrate
Perkara | PAM-FS-GaN100-N+ |
Jenis pengaliran | N type/Si doped |
Saiz | 4″(100)+/-1mm |
ketebalan | 480+/-50 |
orientasi | C-paksi (0001) +/- 0.5o |
Lokasi Flat utama | (10-10)+/-0.5o |
Negara Flat utama | 32+/-1mm |
Menengah Flat Lokasi | (1-210)+/-3o |
Menengah Flat Negara | 18+/-1mm |
Kerintangan (300K) | <0.05Ω·cm |
kehelan Ketumpatan | <5x106cm-2 |
FWHM | <=100arc.sec |
TTV | <=30um |
BOW | <=+/-30um |
kemasan permukaan | Front Surface:Ra<=0.3nm.Epi-ready polished |
— | Kembali permukaan: 1.Fine tanah |
— | 2.Polished. |
Kawasan yang boleh digunakan | ≥ 90 % |
4″ N type Undoped GaN(Gallium Nitride) Free-standing Substrate
Perkara | PAM-FS-GaN100-N- |
Jenis pengaliran | N type/undoped |
Saiz | 4″(100)+/-1mm |
ketebalan | 480+/-50 |
orientasi | C-paksi (0001) +/- 0.5o |
Lokasi Flat utama | (10-10)+/-0.5o |
Negara Flat utama | 32+/-1mm |
Menengah Flat Lokasi | (1-210)+/-3o |
Menengah Flat Negara | 18+/-1mm |
Kerintangan (300K) | <0.5Ω · cm |
kehelan Ketumpatan | <5x106cm-2 |
FWHM | <=100arc.sec |
TTV | <=30um |
BOW | <=+/-30um |
kemasan permukaan | Front Surface:Ra<=0.3nm.Epi-ready polished |
— | Kembali permukaan: 1.Fine tanah |
— | 2.Polished. |
Kawasan yang boleh digunakan | ≥ 90 % |
4″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate
Perkara | PAM-FS-GaN100-SI |
Jenis pengaliran | Semi-Insulating |
Saiz | 4″(100)+/-1mm |
ketebalan | 480+/-50 |
orientasi | C-paksi (0001) +/- 0.5o |
Lokasi Flat utama | (10-10)+/-0.5o |
Negara Flat utama | 32+/-1mm |
Menengah Flat Lokasi | (1-210)+/-3o |
Menengah Flat Negara | 18+/-1mm |
Kerintangan (300K) | >10^6Ω·cm |
kehelan Ketumpatan | <5x106cm-2 |
FWHM | <=100arc.sec |
TTV | <=30um |
BOW | <=+/-30um |
kemasan permukaan | Front Surface:Ra<=0.3nm.Epi-ready polished |
— | Kembali permukaan: 1.Fine tanah |
— | 2.Polished. |
Kawasan yang boleh digunakan | ≥ 90 % |
2″ Si doped GaN(Gallium Nitride) Free-standing Substrate
Perkara | PAM-FS-GaN50-N+ | |||
Jenis pengaliran | N type/Si doped | |||
Saiz | 2 "(50.8) +/- 1mm | |||
ketebalan | 400+/-50 | |||
orientasi | C-paksi (0001) +/- 0.5o | |||
Lokasi Flat utama | (10-10)+/-0.5o | |||
Negara Flat utama | 16 +/- 1mm | |||
Menengah Flat Lokasi | (1-210)+/-3o | |||
Menengah Flat Negara | 8 +/- 1mm | |||
Kerintangan (300K) | <0.05Ω·cm | |||
kehelan Ketumpatan | <5x106cm-2 | |||
FWHM | <=100arc.sec | |||
TTV | <= 15um | |||
BOW | <=+/-20um | |||
kemasan permukaan | Front Surface:Ra<=0.3nm.Epi-ready polished | |||
Back Surface:1.Fine ground | ||||
2.Polished. | ||||
Usable Area | ≥ 90 % |
2″ Undoped GaN(Gallium Nitride) Free-standing Substrate
Perkara | PAM-FS-GaN50-N- | ||||
Jenis pengaliran | N type/undoped | ||||
Saiz | 2 "(50.8) +/- 1mm | ||||
ketebalan | 400+/-50 | ||||
orientasi | C-paksi (0001) +/- 0.5o | ||||
Lokasi Flat utama | (10-10)+/-0.5o | ||||
Negara Flat utama | 16 +/- 1mm | ||||
Menengah Flat Lokasi | (1-210)+/-3o | ||||
Menengah Flat Negara | 8 +/- 1mm | ||||
Kerintangan (300K) | <0.5Ω · cm | ||||
kehelan Ketumpatan | <5x106cm-2 | ||||
FWHM | <=100arc.sec | ||||
TTV | <= 15um | ||||
BOW | <=+/-20um | ||||
kemasan permukaan | Front Surface:Ra<=0.3nm.Epi-ready polished | ||||
Back Surface:1.Fine ground | |||||
2.Polished. | |||||
Usable Area | ≥ 90 % |
2″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate
Perkara | PAM-FS-GaN50-SI | ||||
Jenis pengaliran | Semi-Insulating | ||||
Saiz | 2 "(50.8) +/- 1mm | ||||
ketebalan | 400+/-50 | ||||
orientasi | C-paksi (0001) +/- 0.5o | ||||
Lokasi Flat utama | (10-10)+/-0.5o | ||||
Negara Flat utama | 16 +/- 1mm | ||||
Menengah Flat Lokasi | (1-210)+/-3o | ||||
Menengah Flat Negara | 8 +/- 1mm | ||||
Kerintangan (300K) | >10^6Ω·cm | ||||
kehelan Ketumpatan | <5x106cm-2 | ||||
FWHM | <=100arc.sec | ||||
TTV | <= 15um | ||||
BOW | <=+/-20um | ||||
kemasan permukaan | Front Surface:Ra<=0.3nm.Epi-ready polished | ||||
Back Surface:1.Fine ground | |||||
2.Polished. | |||||
Usable Area | ≥ 90 % |
15mm, 10mm, 5mmBerdiri bebasGan Substrat
Perkara | PAM-FS-GaN15-N | PAM-FS-GaN15-SI | |
PAM-FS-GaN10-N | PAM-FS-GaN10-SI | ||
PAM-FS-GaN5-N | PAM-FS-GaN5-SI | ||
Jenis pengaliran | N-jenis | Semi-penebat | |
Saiz | 14.0mm*15mm 10.0mm*10.5mm 5.0*5.5mm | ||
ketebalan | 330-450um | ||
orientasi | C-paksi (0001) +/- 0.5o | ||
Lokasi Flat utama | |||
Negara Flat utama | |||
Menengah Flat Lokasi | |||
Menengah Flat Negara | |||
Kerintangan (300K) | <0.5Ω · cm | > 106Ω · cm | |
kehelan Ketumpatan | <5x106cm-2 | ||
Marco kecacatan Ketumpatan | 0cm-2 | ||
TTV | <= 15um | ||
BOW | <= 20um | ||
kemasan permukaan | Surface Front: Ra <0.2nm.Epi sedia digilap | ||
Kembali permukaan: 1.Fine tanah | |||
2.Rough dikisar | |||
Kawasan yang boleh digunakan | ≥ 90% |
Nota:
Validation Wafer: Considering convenience of usage, PAM-XIAMEN offers 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate
Pemakaian Gan Substrat
Pepejal Lighting Negeri: peranti Gan digunakan sebagai ultra cahaya kecerahan tinggi pemancar cahaya (LED), televisyen, kereta, dan pencahayaan umum
DVD Storage: Blue laser diodes
Power Device: Devices fabricated on GaN bulk substrate are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites
Pure Gallium Nitride Substrate Ideal for III-Nitrides re-growth
Stesen Pangkalan Wireless: transistor kuasa RF
Akses Jalur Lebar Wayarles: MMICs frekuensi tinggi, RF-Circuits MMICs
Sensor tekanan: MEMS
Sensor haba: Pengesan Pyro-elektrik
Power Udara: isyarat bercampur Gan / Integrasi Si
Elektronik Automotif: elektronik suhu tinggi
Lines Power Transmission: elektronik voltan tinggi
Sensor rangka: Pengesan UV
Solar Cells: GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride
(InGaN) aloi sesuai untuk mewujudkan bahan sel solar. Kerana kelebihan ini, sel-sel solar InGaN ditanam di atas substrat Gan bersedia untuk menjadi salah satu aplikasi baru yang paling penting dan pasaran pertumbuhan Gan wafer substrat.
Sesuai untuk HEMTs, FET