Freestanding Gan substrat

Freestanding Gan substrat

PAM-XIAMEN telah menubuhkan teknologi pembuatan untuk berdiri sendiri (galium nitrida) wafer Gan substrat, yang adalah untuk UHB-LED dan LD. Berkembang dengan teknologi hidrida fasa wap epitaxy (HVPE), substrat Gan kami mempunyai ketumpatan kecacatan rendah.

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Freestanding Gan substrat

As a leading GaN substrate supplier, PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer  which is Bulk GaN substrate for UHB-LED, LD and fabrication as MOS-based devices. Grown by hydride vapour phase epitaxy (HVPE) technology, our Gan substrat for III-nitride devices has  low defect density and less or free macro defect density. The GaN substrate thickness is 330~530μm.

In addition to power devices, gallium nitride semiconductor substrates are increasingly used in the manufacture of white light LEDs because the GaN LED substrates provide improved electrical characteristics and their performance exceeds current devices. Moreover, the rapid development of gallium nitride substrate technology has led to the development of high-efficiency GaN free standing substrates with low defect density and free macro defect density. Therefore, such GaN substrates can be increasingly used to white LEDs. As a result, the bulk GaN substrate market is growing rapidly. By the way, bulk GaN wafer can be used for testing vertical power device concepts.

Spesifikasi Freestanding Gan substrat

 Di sini menunjukkan spesifikasi terperinci:

4″ N type Si doped GaN(Gallium Nitride) Free-standing Substrate

Perkara PAM-FS-GaN100-N+
Jenis pengaliran N type/Si doped
Saiz 4″(100)+/-1mm
ketebalan 480+/-50
orientasi C-paksi (0001) +/- 0.5o
Lokasi Flat utama (10-10)+/-0.5o
Negara Flat utama 32+/-1mm
Menengah Flat Lokasi (1-210)+/-3o
Menengah Flat Negara 18+/-1mm
Kerintangan (300K) <0.05Ω·cm
kehelan Ketumpatan <5x106cm-2
FWHM <=100arc.sec
TTV <=30um
BOW <=+/-30um
kemasan permukaan Front Surface:Ra<=0.3nm.Epi-ready polished
Kembali permukaan: 1.Fine tanah
2.Polished.
Kawasan yang boleh digunakan ≥ 90 %

 

4″ N type Undoped GaN(Gallium Nitride) Free-standing Substrate

Perkara PAM-FS-GaN100-N-
Jenis pengaliran N type/undoped
Saiz 4″(100)+/-1mm
ketebalan 480+/-50
orientasi C-paksi (0001) +/- 0.5o
Lokasi Flat utama (10-10)+/-0.5o
Negara Flat utama 32+/-1mm
Menengah Flat Lokasi (1-210)+/-3o
Menengah Flat Negara 18+/-1mm
Kerintangan (300K) <0.5Ω · cm
kehelan Ketumpatan <5x106cm-2
FWHM <=100arc.sec
TTV <=30um
BOW <=+/-30um
kemasan permukaan Front Surface:Ra<=0.3nm.Epi-ready polished
Kembali permukaan: 1.Fine tanah
2.Polished.
Kawasan yang boleh digunakan ≥ 90 %

 

4″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate

Perkara PAM-FS-GaN100-SI
Jenis pengaliran Semi-Insulating
Saiz 4″(100)+/-1mm
ketebalan 480+/-50
orientasi C-paksi (0001) +/- 0.5o
Lokasi Flat utama (10-10)+/-0.5o
Negara Flat utama 32+/-1mm
Menengah Flat Lokasi (1-210)+/-3o
Menengah Flat Negara 18+/-1mm
Kerintangan (300K) >10^6Ω·cm
kehelan Ketumpatan <5x106cm-2
FWHM <=100arc.sec
TTV <=30um
BOW <=+/-30um
kemasan permukaan Front Surface:Ra<=0.3nm.Epi-ready polished
Kembali permukaan: 1.Fine tanah
2.Polished.
Kawasan yang boleh digunakan ≥ 90 %

 

2″ Si doped GaN(Gallium Nitride) Free-standing Substrate

Perkara PAM-FS-GaN50-N+
Jenis pengaliran N type/Si doped
Saiz 2 "(50.8) +/- 1mm
ketebalan 400+/-50
orientasi C-paksi (0001) +/- 0.5o
Lokasi Flat utama (10-10)+/-0.5o
Negara Flat utama 16 +/- 1mm
Menengah Flat Lokasi (1-210)+/-3o
Menengah Flat Negara 8 +/- 1mm
Kerintangan (300K) <0.05Ω·cm
kehelan Ketumpatan <5x106cm-2
FWHM <=100arc.sec
TTV <= 15um
BOW <=+/-20um
kemasan permukaan Front Surface:Ra<=0.3nm.Epi-ready polished
                             Back Surface:1.Fine ground 
                                                    2.Polished.
Usable Area  ≥ 90 % 


 

2″ Undoped GaN(Gallium Nitride) Free-standing Substrate

Perkara PAM-FS-GaN50-N-
Jenis pengaliran N type/undoped
Saiz 2 "(50.8) +/- 1mm
ketebalan 400+/-50
orientasi C-paksi (0001) +/- 0.5o
Lokasi Flat utama (10-10)+/-0.5o
Negara Flat utama 16 +/- 1mm
Menengah Flat Lokasi (1-210)+/-3o
Menengah Flat Negara 8 +/- 1mm
Kerintangan (300K) <0.5Ω · cm
kehelan Ketumpatan <5x106cm-2
FWHM <=100arc.sec
TTV <= 15um
BOW <=+/-20um
kemasan permukaan Front Surface:Ra<=0.3nm.Epi-ready polished
                             Back Surface:1.Fine ground 
                                                      2.Polished.
Usable Area  ≥ 90 % 


 

2″ Semi-Insulating GaN(Gallium Nitride) Free-standing Substrate

Perkara PAM-FS-GaN50-SI
Jenis pengaliran Semi-Insulating
Saiz 2 "(50.8) +/- 1mm
ketebalan 400+/-50
orientasi C-paksi (0001) +/- 0.5o
Lokasi Flat utama (10-10)+/-0.5o
Negara Flat utama 16 +/- 1mm
Menengah Flat Lokasi (1-210)+/-3o
Menengah Flat Negara 8 +/- 1mm
Kerintangan (300K) >10^6Ω·cm
kehelan Ketumpatan <5x106cm-2
FWHM <=100arc.sec
TTV <= 15um
BOW <=+/-20um
kemasan permukaan Front Surface:Ra<=0.3nm.Epi-ready polished
                             Back Surface:1.Fine ground 
                                                      2.Polished.
Usable Area  ≥ 90 % 

15mm, 10mm, 5mmBerdiri bebasGan Substrat

Perkara PAM-FS-GaN15-N PAM-FS-GaN15-SI
PAM-FS-GaN10-N PAM-FS-GaN10-SI
PAM-FS-GaN5-N PAM-FS-GaN5-SI
Jenis pengaliran N-jenis Semi-penebat
Saiz 14.0mm*15mm   10.0mm*10.5mm   5.0*5.5mm
ketebalan 330-450um
orientasi C-paksi (0001) +/- 0.5o
Lokasi Flat utama  
Negara Flat utama  
Menengah Flat Lokasi  
Menengah Flat Negara  
Kerintangan (300K) <0.5Ω · cm > 106Ω · cm
kehelan Ketumpatan <5x106cm-2
Marco kecacatan Ketumpatan 0cm-2
TTV <= 15um
BOW <= 20um
kemasan permukaan Surface Front: Ra <0.2nm.Epi sedia digilap
  Kembali permukaan: 1.Fine tanah
    2.Rough dikisar
Kawasan yang boleh digunakan ≥ 90%


            

Nota:

Validation Wafer: Considering convenience of usage, PAM-XIAMEN offers 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate

Pemakaian Gan Substrat

Pepejal Lighting Negeri: peranti Gan digunakan sebagai ultra cahaya kecerahan tinggi pemancar cahaya (LED), televisyen, kereta, dan pencahayaan umum

DVD Storage: Blue laser diodes

Power Device: Devices fabricated on GaN bulk substrate are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites


Pure Gallium Nitride Substrate Ideal for III-Nitrides re-growth

Stesen Pangkalan Wireless: transistor kuasa RF

Akses Jalur Lebar Wayarles: MMICs frekuensi tinggi, RF-Circuits MMICs

Sensor tekanan: MEMS

Sensor haba: Pengesan Pyro-elektrik

Power Udara: isyarat bercampur Gan / Integrasi Si

Elektronik Automotif: elektronik suhu tinggi

Lines Power Transmission: elektronik voltan tinggi

Sensor rangka: Pengesan UV

Solar Cells: GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

(InGaN) aloi sesuai untuk mewujudkan bahan sel solar. Kerana kelebihan ini, sel-sel solar InGaN ditanam di atas substrat Gan bersedia untuk menjadi salah satu aplikasi baru yang paling penting dan pasaran pertumbuhan Gan wafer substrat.

Sesuai untuk HEMTs, FET

projek diod Schottky Gan: Kami menerima spec adat diod Schottky dibina pada HVPE tempatan, berdiri bebas galium nitrida (Gan) lapisan n- dan p-jenis.
Kedua-dua kenalan (ohm dan Schottky) telah disimpan di permukaan atas menggunakan Al / Ti dan Pd / Ti / Au.
Kami akan menawarkan laporan ujian, sila lihat di bawah contoh:

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