Ge kristal tunggal (Perdana grade) -8

Ge kristal tunggal (Perdana grade) -8

PAM XIAMEN menawarkan 4 "Diameter Wafer.

4 "Diameter Wafer

Ge jenis-N 4 ", undoped

Ge Wafer (111) 4 "dia x 0.5 mm, 1SP, N jenis (didopkan un-)
Ge Wafer (100). Undoped, 4 "dia x 0.5 mm, 1SP
Ge Wafer (100). Undoped, 4 "dia x 0.5 mm, 2SP, R> 50 ohm-cm
Ge Wafer (110). Undoped, 4 "dia x 0.5 mm, 1SP, R:> 50 ohm.cm
Ge Wafer (110). Undoped, 4 "dia x 0.5 mm, 2SP, R:> 50 ohm.cm
Ge Wafer (111) 4 "dia x 0.5 mm, 2SP, N jenis (didopkan un-)

Ge jenis-P 4 "Ga-didopkan

Ge Wafer (100) 100 dia x 0.5 mm, 1SP P jenis (Ga didopkan) R: 1-5 ohm.cm
Ge Wafer (100). 100mm dia x 0.5 mm, 2SP, P jenis (Ga didopkan) R: 0.004-0.01ohm.cm
Ge Wafer (100). 100mm dia x 0.5 mm, 2SP, P jenis (Ga didopkan) R: 1,4-1,7 ohm.cm
VGF-Ge Wafer (100) dengan 6 tahap miscut ke arah <111>, 100 mmdia x 0.5 mm, 1SP, P jenis (Ga didopkan) R: 0,296-0,326 Ohm.cm
VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, P jenis (Ga didopkan) R: 0,128-0,303 Ohm.cm
VGF-Ge Wafer (100). 100mm dia x 0.4 mm, 2SP, P jenis (Ga didopkan) R: 0,0038-0,0158 Ohm.cm
VGF-Ge Wafer (100). 100 mmdia x 0,175 mm, 1SP, P jenis (Ga didopkan) R: 0,279-0,324 Ohm.cm
VGF-Ge Wafer (100). 100 mmdia x 0,175 mm, 2SP, P jenis (Ga didopkan) R: ,1-0,182 ohm.cm
VGF-Ge Wafer (100) 100 mmdia x 0.5 mm, 1SP, P jenis (Ga didopkan) R: 0,128-0,303 Ohm.cm

Ge, N-jenis, 4 "Sb & Jawapan -doped

Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N jenis (Sb didopkan) R: 2,5-2,7 ohm.cm
Ge Wafer (100) dengan utama rata <110> 100mm dia x 0.5 mm, 1SP, N jenis (Sb didopkan) R: 0,1-0,5 ohm.cm
Ge Wafer (110) 4 "dia x 0.5 mm, 2SP, N jenis (Sb didopkan) R: 0.1-0.5ohm.cm
Ge Wafer (110) 4 "dia x 0.5 mm, 2SP, N jenis (Sb didopkan) R: 1-5 ohm.cm
Ge Wafer (110) 4 "dia x 0.5 mm, 1SP, N jenis (Sb didopkan) R: 1-5 ohm.cm
VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 1SP, N jenis (As-didopkan), R: 0,214-0,250 ohm.cm
VGF-Ge Wafer (100) 100mm dia x 0.5 mm, 2SP, N jenis (As-didopkan), R: ,173-0,25 ohm.cm
Ge Wafer (111) 4 "dia x 0.5 mm, 1SP, N jenis (Sb- didopkan) dengan keberintangan: 0,014-0,022 ohm-cm
Ge Wafer (111) 4 "dia x 0.5 mm, 2SP, N jenis (Sb- didopkan) dengan keberintangan: 0,014-0,022 ohm-cm
Ge Wafer (100) dengan rata (100) 4 "dia x 0.5 mm, 1SP, N jenis (Sb didopkan) keberintangan: 0,1-0,5 ohm-cm

Untuk maklumat lanjut, sila layari laman web kami: https://www.powerwaywafer.com,
menghantar e-mel kepada kami di sales@powerwaywafer.com dan powerwaymaterial@gmail.com

Mendapati pada tahun 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) adalah sebuah pengeluar terkemuka bagi bahan semikonduktor di China.PAM-XIAMEN membangunkan pertumbuhan maju kristal dan teknologi epitaxy, proses pembuatan, substrat kejuruteraan dan peranti semikonduktor.teknologi PAM-XIAMEN ini membolehkan prestasi yang lebih tinggi dan pembuatan kos yang lebih rendah daripada wafer semikonduktor.

PAM-XIAMEN membangunkan pertumbuhan kristal dan epitaxy teknologi canggih, pelbagai dari generasi pertama Germanium wafer, generasi kedua galium arsenida dengan pertumbuhan substrat dan epitaxy pada silikon terdop bahan semikonduktor jenis-n III-V berdasarkan Ga, Al, Dalam, As dan P ditanam oleh MBE atau MOCVD, kepada keturunan yang ketiga: silikon karbida dan Gallium Nitride untuk LED dan aplikasi peranti kuasa.

2019-04-25

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